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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VS-85HF20DIODE GEN PURP 200V 85A DO203AB Vishay General Semiconductor - Diodes Division |
153 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 9 mA @ 200 V | 200 V | 85A | -65°C ~ 150°C | 1.2 V @ 267 A | |
|
VS-50SQ100DIODE SCHOTTKY 100V 5A DO204AR Vishay General Semiconductor - Diodes Division |
3,417 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 550 µA @ 100 V | 100 V | 5A | -55°C ~ 175°C | 660 mV @ 5 A | |
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SE15PBHM3/85ADIODE GEN PURP 100V 1.5A DO220AA Vishay General Semiconductor - Diodes Division |
19,740 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 9.5pF @ 4V, 1MHz | 900 ns | 5 µA @ 100 V | 100 V | 1.5A | -55°C ~ 175°C | 1.05 V @ 1.5 A |
|
30CPF12DIODE GEN PURP 1.2KV 30A TO247AC Vishay General Semiconductor - Diodes Division |
3,377 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 450 ns | 100 µA @ 1200 V | 1200 V | 30A | -40°C ~ 150°C | 1.41 V @ 30 A | |
|
SD200N12PVDIODE GEN PURP 1.2KV 200A DO205 Vishay General Semiconductor - Diodes Division |
2,709 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Stud Mount | - | - | 15 mA @ 1200 V | 1200 V | 200A | -40°C ~ 180°C | 1.4 V @ 630 A | |
|
160CMQ045DIODE SCHOTTKY 45V 160A TO249AA Vishay General Semiconductor - Diodes Division |
2,787 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Chassis Mount | 2600pF @ 5V, 1MHz | - | 5 mA @ 45 V | 45 V | 160A | - | 860 mV @ 160 A | |
|
10ETF02FPDIODE GEN PURP 200V 10A TO220FP Vishay General Semiconductor - Diodes Division |
2,444 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 145 ns | 100 µA @ 200 V | 200 V | 10A | -40°C ~ 150°C | 1.2 V @ 10 A | |
|
10ETF02STRLDIODE GEN PURP 200V 10A D2PAK Vishay General Semiconductor - Diodes Division |
3,365 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 145 ns | 100 µA @ 200 V | 200 V | 10A | -40°C ~ 150°C | 1.2 V @ 10 A | |
|
|
10ETF04FPDIODE GEN PURP 400V 10A TO220FP Vishay General Semiconductor - Diodes Division |
3,937 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 145 ns | 100 µA @ 400 V | 400 V | 10A | -40°C ~ 150°C | 1.2 V @ 10 A | |
|
|
10ETF04STRLDIODE GEN PURP 400V 10A D2PAK Vishay General Semiconductor - Diodes Division |
2,526 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 145 ns | 100 µA @ 400 V | 400 V | 10A | -40°C ~ 150°C | 1.2 V @ 10 A | |
|
|
10ETF06FPDIODE GEN PURP 600V 10A TO220FP Vishay General Semiconductor - Diodes Division |
2,548 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 145 ns | 100 µA @ 600 V | 600 V | 10A | -40°C ~ 150°C | 1.2 V @ 10 A | |
|
|
10ETF06STRLDIODE GEN PURP 600V 10A D2PAK Vishay General Semiconductor - Diodes Division |
3,673 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 145 ns | 100 µA @ 600 V | 600 V | 10A | -40°C ~ 150°C | 1.2 V @ 10 A | |
|
|
10ETF10FPDIODE GEN PURP 1KV 10A TO220FP Vishay General Semiconductor - Diodes Division |
2,863 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 310 ns | 100 µA @ 1000 V | 1000 V | 10A | -40°C ~ 150°C | 1.33 V @ 10 A | ||
|
|
10ETF10SDIODE GEN PURP 1KV 10A D2PAK Vishay General Semiconductor - Diodes Division |
3,340 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 310 ns | 100 µA @ 1000 V | 1000 V | 10A | -40°C ~ 150°C | 1.33 V @ 10 A | |
|
|
10ETF10STRLDIODE GEN PURP 1KV 10A D2PAK Vishay General Semiconductor - Diodes Division |
3,691 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 310 ns | 100 µA @ 1000 V | 1000 V | 10A | -40°C ~ 150°C | 1.33 V @ 10 A | |
|
|
10ETF10STRRDIODE GEN PURP 1KV 10A D2PAK Vishay General Semiconductor - Diodes Division |
2,077 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 310 ns | 100 µA @ 1000 V | 1000 V | 10A | -40°C ~ 150°C | 1.33 V @ 10 A | |
|
|
10ETF12FPDIODE GEN PURP 1.2KV 10A TO220FP Vishay General Semiconductor - Diodes Division |
2,232 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 310 ns | 100 µA @ 1200 V | 1200 V | 10A | -40°C ~ 150°C | 1.33 V @ 10 A | |
|
|
10ETF12SDIODE GEN PURP 1.2KV 10A D2PAK Vishay General Semiconductor - Diodes Division |
3,726 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 310 ns | 100 µA @ 1200 V | 1200 V | 10A | -40°C ~ 150°C | 1.33 V @ 10 A | |
|
|
10ETS08STRLDIODE GEN PURP 800V 10A D2PAK Vishay General Semiconductor - Diodes Division |
2,701 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | - | 50 µA @ 800 V | 800 V | 10A | -40°C ~ 150°C | 1.1 V @ 10 A | |
|
|
10ETS08STRRDIODE GEN PURP 800V 10A D2PAK Vishay General Semiconductor - Diodes Division |
3,790 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | - | 50 µA @ 800 V | 800 V | 10A | -40°C ~ 150°C | 1.1 V @ 10 A |
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