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| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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10ETS12STRLDIODE GEN PURP 1.2KV 10A D2PAK Vishay General Semiconductor - Diodes Division |
3,700 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | - | 50 µA @ 1200 V | 1200 V | 10A | -40°C ~ 150°C | 1.1 V @ 10 A | |
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SE15PG-M3/85ADIODE GEN PURP 400V 1.5A DO220AA Vishay General Semiconductor - Diodes Division |
17,075 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 9.5pF @ 4V, 1MHz | 900 ns | 5 µA @ 400 V | 400 V | 1.5A | -55°C ~ 175°C | 1.05 V @ 1.5 A |
|
RMPG06G-E3/73DIODE GEN PURP 400V 1A MPG06 Vishay General Semiconductor - Diodes Division |
8,453 | - |
RFQ |
Scheda tecnica |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 6.6pF @ 4V, 1MHz | 150 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
|
|
10ETS12STRRDIODE GEN PURP 1.2KV 10A D2PAK Vishay General Semiconductor - Diodes Division |
2,193 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | - | 50 µA @ 1200 V | 1200 V | 10A | -40°C ~ 150°C | 1.1 V @ 10 A | |
|
|
10TQ035STRLDIODE SCHOTTKY 35V 10A D2PAK Vishay General Semiconductor - Diodes Division |
2,369 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 2 mA @ 35 V | 35 V | 10A | -55°C ~ 175°C | 570 mV @ 10 A | |
|
|
20ETF02SDIODE GEN PURP 200V 20A D2PAK Vishay General Semiconductor - Diodes Division |
2,933 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 160 ns | 100 µA @ 200 V | 200 V | 20A | -40°C ~ 150°C | 1.3 V @ 20 A | |
|
|
10TQ035STRRDIODE SCHOTTKY 35V 10A D2PAK Vishay General Semiconductor - Diodes Division |
3,279 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 2 mA @ 35 V | 35 V | 10A | -55°C ~ 175°C | 570 mV @ 10 A | |
|
|
10TQ045STRLDIODE SCHOTTKY 45V 10A D2PAK Vishay General Semiconductor - Diodes Division |
2,973 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 2 mA @ 45 V | 45 V | 10A | -55°C ~ 175°C | 570 mV @ 10 A | |
|
30EPF02DIODE GEN PURP 200V 30A TO247AC Vishay General Semiconductor - Diodes Division |
3,436 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 160 ns | 100 µA @ 200 V | 200 V | 30A | -40°C ~ 150°C | 1.41 V @ 30 A | |
|
|
10TQ045STRRDIODE SCHOTTKY 45V 10A D2PAK Vishay General Semiconductor - Diodes Division |
2,976 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 2 mA @ 45 V | 45 V | 10A | -55°C ~ 175°C | 570 mV @ 10 A | |
|
150KS5DIODE GEN PURP 50V 150A B42 Vishay General Semiconductor - Diodes Division |
3,145 | - |
RFQ |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Chassis, Stud Mount | - | - | 35 mA @ 50 V | 50 V | 150A | -40°C ~ 200°C | 1.33 V @ 471 A | ||
|
20ETS08DIODE GEN PURP 800V 20A TO220AC Vishay General Semiconductor - Diodes Division |
3,664 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | - | 100 µA @ 800 V | 800 V | 20A | -40°C ~ 150°C | 1.1 V @ 20 A | |
|
|
30EPF04DIODE GEN PURP 400V 30A TO247AC Vishay General Semiconductor - Diodes Division |
2,365 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 160 ns | 100 µA @ 400 V | 400 V | 30A | -40°C ~ 150°C | 1.41 V @ 30 A | |
|
70U120DDIODE GEN PURP 1.2KV 250A DO205 Vishay General Semiconductor - Diodes Division |
3,897 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Stud Mount | - | - | 60 mA @ 1200 V | 1200 V | 250A | -40°C ~ 200°C | 1.3 V @ 785 A | |
|
|
20ETS08SDIODE GEN PURP 800V 20A D2PAK Vishay General Semiconductor - Diodes Division |
2,265 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | - | 100 µA @ 800 V | 800 V | 20A | -40°C ~ 150°C | 1.1 V @ 20 A | |
|
VS-11DQ10TRDIODE SCHOTTKY 100V 1.1A DO204AL Vishay General Semiconductor - Diodes Division |
3,791 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 500 µA @ 100 V | 100 V | 1.1A | -40°C ~ 150°C | 850 mV @ 1 A | |
|
|
30EPF06DIODE GEN PURP 600V 30A TO247AC Vishay General Semiconductor - Diodes Division |
3,332 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 160 ns | 100 µA @ 600 V | 600 V | 30A | -40°C ~ 150°C | 1.41 V @ 30 A | |
|
|
12TQ035STRLDIODE SCHOTTKY 35V 15A D2PAK Vishay General Semiconductor - Diodes Division |
3,239 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 1.75 mA @ 35 V | 35 V | 15A | -55°C ~ 150°C | 560 mV @ 15 A | |
|
|
70U160DDIODE GEN PURP 1.6KV 250A DO205 Vishay General Semiconductor - Diodes Division |
2,789 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Stud Mount | - | - | 60 mA @ 1600 V | 1600 V | 250A | -40°C ~ 200°C | 1.3 V @ 785 A | |
|
|
20ETS12DIODE GEN PURP 1.2KV 20A TO220AC Vishay General Semiconductor - Diodes Division |
3,951 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | - | 100 µA @ 1200 V | 1200 V | 20A | -40°C ~ 150°C | 1.1 V @ 20 A |
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