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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
VS-HFA08PB120-N3DIODE GEN PURP 1.2KV 8A TO247AC Vishay General Semiconductor - Diodes Division |
3,374 | - |
RFQ |
Scheda tecnica |
Tube | HEXFRED® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 95 ns | 10 µA @ 1200 V | 1200 V | 8A | -55°C ~ 150°C | 3.3 V @ 8 A |
|
SF5408-TAPDIODE GEN PURP 1KV 3A SOD64 Vishay General Semiconductor - Diodes Division |
2,346 | - |
RFQ |
Scheda tecnica |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 75 ns | 5 µA @ 1000 V | 1000 V | 3A | -55°C ~ 175°C | 1.7 V @ 3 A | |
|
VS-15EWH06FNTR-M3DIODE GEN PURP 600V 15A DPAK Vishay General Semiconductor - Diodes Division |
2,722 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 36 ns | 50 µA @ 600 V | 600 V | 15A | -65°C ~ 175°C | 2.1 V @ 15 A |
|
VS-80EBU04DIODE GEN PURP 400V 80A POWIRTAB Vishay General Semiconductor - Diodes Division |
2,455 | - |
RFQ |
Scheda tecnica |
Bulk | FRED Pt® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 50 µA @ 400 V | 400 V | 80A | - | 1.3 V @ 80 A |
|
VS-60APH03L-N3DIODE GP 300V 60A TO247AD-3 Vishay General Semiconductor - Diodes Division |
2,222 | - |
RFQ |
Scheda tecnica |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 42 ns | 10 µA @ 300 V | 300 V | 60A | -55°C ~ 175°C | 1.45 V @ 60 A |
|
|
VS-8EWS16SLHM3DIODES - D-PAK-E3 Vishay General Semiconductor - Diodes Division |
2,583 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 50 µA @ 1600 V | 1600 V | 8A | -40°C ~ 150°C | 1.1 V @ 8 A |
|
VS-12FR60DIODE GEN PURP 600V 12A DO203AA Vishay General Semiconductor - Diodes Division |
2,133 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 12 mA @ 600 V | 600 V | 12A | -65°C ~ 175°C | 1.26 V @ 38 A | |
|
MBR1090-M3/4WDIODE SCHOTTKY 90V 10A TO220AC Vishay General Semiconductor - Diodes Division |
3,906 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 90 V | 90 V | 10A | -65°C ~ 150°C | 800 mV @ 10 A | |
|
|
VS-15TQ060-M3DIODE SCHOTTKY 60V 15A TO220AC Vishay General Semiconductor - Diodes Division |
2,628 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 720pF @ 5V, 1MHz | - | 800 µA @ 60 V | 60 V | 15A | -55°C ~ 150°C | 820 mV @ 30 A | |
|
|
SF5405-TAPDIODE GEN PURP 500V 3A SOD64 Vishay General Semiconductor - Diodes Division |
2,773 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 75 ns | 5 µA @ 500 V | 500 V | 3A | -55°C ~ 175°C | 1.7 V @ 3 A | |
|
|
BYW75TAPDIODE AVALANCHE 500V 3A SOD64 Vishay General Semiconductor - Diodes Division |
2,920 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 200 ns | 5 µA @ 500 V | 500 V | 3A | -55°C ~ 175°C | 1.1 V @ 3 A | |
|
|
SF5405-TRDIODE GEN PURP 500V 3A SOD64 Vishay General Semiconductor - Diodes Division |
2,737 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 75 ns | 5 µA @ 500 V | 500 V | 3A | -55°C ~ 175°C | 1.7 V @ 3 A | |
|
|
BYW85-TAPDIODE AVALANCHE 800V 3A SOD64 Vishay General Semiconductor - Diodes Division |
2,105 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Through Hole | 60pF @ 4V, 1MHz | 7.5 µs | 1 µA @ 800 V | 800 V | 3A | -55°C ~ 175°C | 1 V @ 3 A | |
|
VS-40HFR10DIODE GEN PURP 100V 40A DO203AB Vishay General Semiconductor - Diodes Division |
3,865 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 9 mA @ 100 V | 100 V | 40A | -65°C ~ 190°C | 1.3 V @ 125 A | |
|
VS-20ETS12FP-M3DIODE GEN PURP 1.2KV 20A TO220FP Vishay General Semiconductor - Diodes Division |
3,813 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 95 ns | 100 µA @ 1200 V | 1200 V | 20A | -40°C ~ 150°C | 1.3 V @ 20 A | ||
|
|
BYW75TRDIODE AVALANCHE 500V 3A SOD64 Vishay General Semiconductor - Diodes Division |
3,471 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 200 ns | 5 µA @ 500 V | 500 V | 3A | -55°C ~ 175°C | 1.1 V @ 3 A | |
|
|
VS-15AWL06FN-M3DIODE GEN PURP 600V 15A DPAK Vishay General Semiconductor - Diodes Division |
3,179 | - |
RFQ |
Scheda tecnica |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 220 ns | 10 µA @ 600 V | 600 V | 15A | -65°C ~ 175°C | 1.05 V @ 15 A |
|
|
VS-8EWS08STRL-M3DIODE GEN PURP 800V 8A D-PAK Vishay General Semiconductor - Diodes Division |
2,171 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 50 µA @ 800 V | 800 V | 8A | -55°C ~ 150°C | 1.1 V @ 8 A | |
|
|
VS-12FR80DIODE GEN PURP 800V 12A DO203AA Vishay General Semiconductor - Diodes Division |
2,889 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 12 mA @ 800 V | 800 V | 12A | -65°C ~ 175°C | 1.26 V @ 38 A | |
|
|
BYW85TRDIODE AVALANCHE 800V 3A SOD64 Vishay General Semiconductor - Diodes Division |
2,402 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Through Hole | 60pF @ 4V, 1MHz | 7.5 µs | 1 µA @ 800 V | 800 V | 3A | -55°C ~ 175°C | 1 V @ 3 A |
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