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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GP08G-E3/73DIODE GEN PURP 400V 800MA DO204 Vishay General Semiconductor - Diodes Division |
2,427 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 2 µs | 5 µA @ 400 V | 400 V | 800mA | -65°C ~ 175°C | 1.3 V @ 800 mA |
|
|
GP08GHE3/73DIODE GEN PURP 400V 800MA DO204 Vishay General Semiconductor - Diodes Division |
3,463 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 2 µs | 5 µA @ 400 V | 400 V | 800mA | -65°C ~ 175°C | 1.3 V @ 800 mA |
|
|
RGP10BE-E3/53DIODE GEN PURP 100V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,032 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 100 V | 100 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
|
GP08J-E3/73DIODE GEN PURP 600V 800MA DO204 Vishay General Semiconductor - Diodes Division |
3,770 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 2 µs | 5 µA @ 600 V | 600 V | 800mA | -65°C ~ 175°C | 1.3 V @ 800 mA |
|
|
RGP10BE-E3/91DIODE GEN PURP 100V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,754 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 100 V | 100 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
|
GP08JHE3/73DIODE GEN PURP 600V 800MA DO204 Vishay General Semiconductor - Diodes Division |
2,462 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 2 µs | 5 µA @ 600 V | 600 V | 800mA | -65°C ~ 175°C | 1.3 V @ 800 mA |
|
|
RGP10BEHE3/53DIODE GEN PURP 100V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,047 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | Automotive, AEC-Q101, Superectifier® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 100 V | 100 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
|
GP10-4002-E3/73DIODE GEN PURP 100V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,851 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | - | 100 V | 1A | - | - | |
|
|
RGP10BEHE3/91DIODE GEN PURP 100V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,112 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | Automotive, AEC-Q101, Superectifier® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 100 V | 100 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
|
GP10-4002E-E3/73DIODE GEN PURP 100V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,007 | - |
RFQ |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | - | 100 V | 1A | - | - | ||
|
|
RGP10BE-M3/73DIODE GEN PURP 100V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,698 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 100 V | 100 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
|
GP10-4002EHE3/73DIODE GEN PURP 100V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,468 | - |
RFQ |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | - | - | 100 V | 1A | - | - | ||
|
|
RGP10BHM3/73DIODE GEN PURP 100V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,247 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | Automotive, AEC-Q101, Superectifier® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 100 V | 100 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
|
RGP10B-M3/73DIODE GEN PURP 100V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,833 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 100 V | 100 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
|
GP10B-4002HE3/73DIODE GEN PURP 100V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,421 | - |
RFQ |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | - | 100 V | 1A | - | - | |
|
|
RGP10D-E3/53DIODE GEN PURP 200V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,606 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
|
GP10-4003-E3/73DIODE GEN PURP 200V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,768 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | - | 200 V | 1A | - | - | |
|
|
RGP10DE-E3/53DIODE GEN PURP 200V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,023 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
|
GP10-4003E-E3/73DIODE GEN PURP 200V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,810 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | - | 200 V | 1A | - | - | |
|
|
RGP10DE-E3/91DIODE GEN PURP 200V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,982 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
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