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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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FGP20DHE3/73DIODE GEN PURP 200V 2A DO204AC Vishay General Semiconductor - Diodes Division |
3,199 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | Automotive, AEC-Q101, Superectifier® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 45pF @ 4V, 1MHz | 35 ns | 2 µA @ 200 V | 200 V | 2A | -65°C ~ 175°C | 950 mV @ 2 A |
|
|
FGP30B-E3/73DIODE GEN PURP 100V 3A DO204AC Vishay General Semiconductor - Diodes Division |
3,177 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 70pF @ 4V, 1MHz | 35 ns | 5 µA @ 100 V | 100 V | 3A | -65°C ~ 175°C | 950 mV @ 3 A |
|
|
FGP30BHE3/73DIODE GEN PURP 100V 3A DO204AC Vishay General Semiconductor - Diodes Division |
3,419 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | Automotive, AEC-Q101, Superectifier® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 70pF @ 4V, 1MHz | 35 ns | 5 µA @ 100 V | 100 V | 3A | -65°C ~ 175°C | 950 mV @ 3 A |
|
|
FGP30C-E3/73DIODE GEN PURP 150V 3A DO204AC Vishay General Semiconductor - Diodes Division |
3,563 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 70pF @ 4V, 1MHz | 35 ns | 5 µA @ 150 V | 150 V | 3A | -65°C ~ 175°C | 950 mV @ 3 A |
|
|
FGP30CHE3/73DIODE GEN PURP 150V 3A DO204AC Vishay General Semiconductor - Diodes Division |
3,560 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | Automotive, AEC-Q101, Superectifier® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 70pF @ 4V, 1MHz | 35 ns | 5 µA @ 150 V | 150 V | 3A | -65°C ~ 175°C | 950 mV @ 3 A |
|
|
FGP30D-E3/73DIODE GEN PURP 200V 3A DO204AC Vishay General Semiconductor - Diodes Division |
2,867 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 70pF @ 4V, 1MHz | 35 ns | 5 µA @ 200 V | 200 V | 3A | -65°C ~ 175°C | 950 mV @ 3 A |
|
|
FGP30DHE3/73DIODE GEN PURP 200V 3A DO204AC Vishay General Semiconductor - Diodes Division |
2,445 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | Automotive, AEC-Q101, Superectifier® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 70pF @ 4V, 1MHz | 35 ns | 5 µA @ 200 V | 200 V | 3A | -65°C ~ 175°C | 950 mV @ 3 A |
|
FGP50B-E3/73DIODE GEN PURP 100V 5A GP20 Vishay General Semiconductor - Diodes Division |
3,195 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 100pF @ 4V, 1MHz | 35 ns | 5 µA @ 100 V | 100 V | 5A | -65°C ~ 175°C | 950 mV @ 5 A |
|
|
FGP50BHE3/73DIODE GEN PURP 100V 5A GP20 Vishay General Semiconductor - Diodes Division |
3,620 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | Automotive, AEC-Q101, Superectifier® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 100pF @ 4V, 1MHz | 35 ns | 5 µA @ 100 V | 100 V | 5A | -65°C ~ 175°C | 950 mV @ 5 A |
|
|
FGP50C-E3/73DIODE GEN PURP 150V 5A GP20 Vishay General Semiconductor - Diodes Division |
2,027 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 100pF @ 4V, 1MHz | 35 ns | 5 µA @ 150 V | 150 V | 5A | -65°C ~ 175°C | 950 mV @ 5 A |
|
|
FGP50CHE3/73DIODE GEN PURP 150V 5A GP20 Vishay General Semiconductor - Diodes Division |
3,925 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | Automotive, AEC-Q101, Superectifier® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 100pF @ 4V, 1MHz | 35 ns | 5 µA @ 150 V | 150 V | 5A | -65°C ~ 175°C | 950 mV @ 5 A |
|
|
FGP50D-E3/73DIODE GEN PURP 200V 5A GP20 Vishay General Semiconductor - Diodes Division |
2,328 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 100pF @ 4V, 1MHz | 35 ns | 5 µA @ 200 V | 200 V | 5A | -65°C ~ 175°C | 950 mV @ 5 A |
|
|
FGP50DHE3/73DIODE GEN PURP 200V 5A GP20 Vishay General Semiconductor - Diodes Division |
2,912 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | Automotive, AEC-Q101, Superectifier® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 100pF @ 4V, 1MHz | 35 ns | 5 µA @ 200 V | 200 V | 5A | -65°C ~ 175°C | 950 mV @ 5 A |
|
RGP30BL-E3/72DIODE GEN PURP 100V 3A DO201AD Vishay General Semiconductor - Diodes Division |
3,023 | - |
RFQ |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 60pF @ 4V, 1MHz | 150 ns | 5 µA @ 100 V | 100 V | 3A | -65°C ~ 175°C | 1.3 V @ 3 A | ||
|
GHR16-E3/73DIODE GEN PURP 1.6KV 500MA R1 Vishay General Semiconductor - Diodes Division |
2,377 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 300 ns | 5 µA @ 1600 V | 1600 V | 500mA | -65°C ~ 175°C | 1.5 V @ 500 mA | |
|
|
RGP30BLHE3/72DIODE GEN PURP 100V 3A DO201AD Vishay General Semiconductor - Diodes Division |
2,818 | - |
RFQ |
Bulk | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 60pF @ 4V, 1MHz | 150 ns | 5 µA @ 100 V | 100 V | 3A | -65°C ~ 175°C | 1.3 V @ 3 A | |
|
|
GI1-1600GPHE3/73DIODE GEN PURP 1.6KV 1A DO204AC Vishay General Semiconductor - Diodes Division |
2,957 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 1.5 µs | 10 µA @ 1600 V | 1600 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
P600A-E3/73DIODE GEN PURP 50V 6A P600 Vishay General Semiconductor - Diodes Division |
2,333 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 150pF @ 4V, 1MHz | 2.5 µs | 5 µA @ 50 V | 50 V | 6A | -50°C ~ 150°C | 900 mV @ 6 A | |
|
GI250-1-E3/73DIODE GEN PURP 1KV 250MA DO204 Vishay General Semiconductor - Diodes Division |
2,794 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 3pF @ 4V, 1MHz | 2 µs | 5 µA @ 1000 V | 1000 V | 250mA | -65°C ~ 175°C | 3.5 V @ 250 mA |
|
|
P600B-E3/73DIODE GEN PURP 100V 6A P600 Vishay General Semiconductor - Diodes Division |
2,972 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 150pF @ 4V, 1MHz | 2.5 µs | 5 µA @ 100 V | 100 V | 6A | -50°C ~ 150°C | 900 mV @ 6 A |
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