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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N4151WS-E3-18DIODE GEN PURP 50V 150MA SOD323 Vishay General Semiconductor - Diodes Division |
11,564 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | - | 4 ns | 50 nA @ 50 V | 50 V | 150mA | -55°C ~ 150°C | 1 V @ 50 mA | |
|
VS-E5TH1512-M315A, 1200V, "H" SERIES FRED PT I Vishay General Semiconductor - Diodes Division |
1,089 | - |
RFQ |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 95 ns | 50 µA @ 1200 V | 1200 V | 15A | -55°C ~ 175°C | 2.5 V @ 15 A | |
|
VS-6EVL06-M3/IDIODE GEN PURPOSE 600V SLIMDPAK Vishay General Semiconductor - Diodes Division |
9,000 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 5 µA @ 600 V | 600 V | 6A | -55°C ~ 175°C | 1.35 V @ 6 A |
|
S2JHE3_A/IDIODE GEN PURP 600V 1.5A DO214AA Vishay General Semiconductor - Diodes Division |
4,604 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 16pF @ 4V, 1MHz | 2 µs | 1 µA @ 600 V | 600 V | 1.5A | -55°C ~ 150°C | 1.15 V @ 1.5 A |
|
LL4150GS08DIODE GEN PURP 50V 300MA SOD80 Vishay General Semiconductor - Diodes Division |
1,109 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 2.5pF @ 0V, 1MHz | 4 ns | 100 nA @ 50 V | 50 V | 300mA | -55°C ~ 175°C | 1 V @ 200 mA | |
|
SE20AFJ-M3/6ADIODE GEN PURP 600V 2A DO221AC Vishay General Semiconductor - Diodes Division |
19,617 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 12pF @ 4V, 1MHz | 1.2 µs | 5 µA @ 600 V | 600 V | 2A (DC) | -55°C ~ 175°C | 1.1 V @ 2 A | |
|
SE20FJHM3/HDIODE GEN PURP 600V 1.7A DO219AB Vishay General Semiconductor - Diodes Division |
9,545 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 13pF @ 4V, 1MHz | 920 ns | 5 µA @ 600 V | 600 V | 1.7A | -55°C ~ 175°C | 1.1 V @ 2 A |
|
CS1D-E3/IDIODE GPP 1A 200V DO-214AC SMA Vishay General Semiconductor - Diodes Division |
3,890 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 6pF @ 4V, 1MHz | 1.5 µs | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
|
|
SS1FL4HM3/HDIODE SCHOTTKY 40V 1A DO-219AB Vishay General Semiconductor - Diodes Division |
27,102 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 115pF @ 4V, 1MHz | - | 200 µA @ 40 V | 40 V | 1A | -55°C ~ 150°C | 500 mV @ 1 A |
|
UF4003-E3/73DIODE GEN PURP 200V 1A DO204AL Vishay General Semiconductor - Diodes Division |
6,357 | - |
RFQ |
Scheda tecnica |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 17pF @ 4V, 1MHz | 50 ns | 10 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
|
|
UF4005-E3/73DIODE GEN PURP 600V 1A DO204AL Vishay General Semiconductor - Diodes Division |
7,428 | - |
RFQ |
Scheda tecnica |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 17pF @ 4V, 1MHz | 75 ns | 10 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
|
UF4001-E3/73DIODE GEN PURP 50V 1A DO204AL Vishay General Semiconductor - Diodes Division |
4,802 | - |
RFQ |
Scheda tecnica |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 17pF @ 4V, 1MHz | 50 ns | 10 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
|
|
BYS12-90-M3/TRDIODE SCHOTTKY 90V 1.5A DO214AC Vishay General Semiconductor - Diodes Division |
4,092 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 90 V | 90 V | 1.5A | -55°C ~ 150°C | 750 mV @ 1 A | |
|
BAW27-TAPDIODE GEN PURP 60V 600MA DO35 Vishay General Semiconductor - Diodes Division |
4,708 | - |
RFQ |
Scheda tecnica |
Cut Tape (CT),Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 4pF @ 0V, 1MHz | 6 ns | 100 nA @ 60 V | 60 V | 600mA (DC) | 175°C (Max) | 1.25 V @ 400 mA |
|
V8PM45-M3/HDIODE SCHOTTKY 8A 45V SMPC Vishay General Semiconductor - Diodes Division |
2,925 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 1450pF @ 4V, 1MHz | - | 200 µA @ 45 V | 45 V | 8A | -40°C ~ 175°C | 600 mV @ 8 A |
|
UH10FT-E3/4WDIODE GEN PURP 300V 10A TO220AC Vishay General Semiconductor - Diodes Division |
3,178 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 35 ns | 5 µA @ 300 V | 300 V | 10A | -55°C ~ 175°C | 1.2 V @ 10 A | |
|
|
UH8JT-E3/45DIODE GEN PURP 600V 8A TO220AC Vishay General Semiconductor - Diodes Division |
2,484 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 45 ns | 5 µA @ 600 V | 600 V | 8A | -55°C ~ 175°C | 3 V @ 8 A | |
|
UHB10FT-E3/4WDIODE GEN PURP 300V 10A TO263AB Vishay General Semiconductor - Diodes Division |
2,781 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 35 ns | 5 µA @ 300 V | 300 V | 10A | -55°C ~ 175°C | 1.2 V @ 10 A | |
|
UHF8JT-E3/45DIODE GEN PURP 600V 8A ITO220AC Vishay General Semiconductor - Diodes Division |
3,462 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 45 ns | 5 µA @ 600 V | 600 V | 8A | -55°C ~ 175°C | 3 V @ 8 A | |
|
V30100S-E3/45DIODE SCHOTTKY 100V 30A TO220AB Vishay General Semiconductor - Diodes Division |
3,230 | - |
RFQ |
Scheda tecnica |
Tube | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 1 mA @ 100 V | 100 V | 30A | -40°C ~ 150°C | 910 mV @ 30 A |
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