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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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BAV202-GS18DIODE GEN PURP 150V 250MA SOD80 Vishay General Semiconductor - Diodes Division |
9,390 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 1.5pF @ 0V, 1MHz | 50 ns | 100 nA @ 150 V | 150 V | 250mA (DC) | 150°C (Max) | 1 V @ 100 mA |
|
VF30100S-E3/45DIODE SCHOTTKY 100V 30A ITO220AB Vishay General Semiconductor - Diodes Division |
3,148 | - |
RFQ |
Scheda tecnica |
Tube | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 1 mA @ 100 V | 100 V | 30A | -40°C ~ 150°C | 910 mV @ 30 A |
|
BAS19-E3-08DIODE GEN PURP 100V 200MA SOT23 Vishay General Semiconductor - Diodes Division |
2,476 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 5pF @ 0V, 1MHz | 50 ns | 100 nA @ 100 V | 100 V | 200mA | -55°C ~ 150°C | 1.25 V @ 200 mA | |
|
V8PM45HM3/HDIODE SCHOTTKY 8A 45V SMPC Vishay General Semiconductor - Diodes Division |
2,616 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 1450pF @ 4V, 1MHz | - | 200 µA @ 45 V | 45 V | 8A | -40°C ~ 175°C | 600 mV @ 8 A |
|
1N4934-E3/73DIODE GEN PURP 100V 1A DO204AL Vishay General Semiconductor - Diodes Division |
1,849 | - |
RFQ |
Scheda tecnica |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 12pF @ 4V, 1MHz | 200 ns | 5 µA @ 100 V | 100 V | 1A | -50°C ~ 150°C | 1.2 V @ 1 A | |
|
VS-30BQ060PBFDIODE SCHOTTKY 60V 3A SMC Vishay General Semiconductor - Diodes Division |
2,386 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 500 µA @ 60 V | 60 V | 3A | -55°C ~ 150°C | 580 mV @ 3 A | |
|
S1M-E3/61TDIODE GEN PURP 1KV 1A DO214AC Vishay General Semiconductor - Diodes Division |
157,417 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 12pF @ 4V, 1MHz | 1.8 µs | 5 µA @ 1000 V | 1000 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
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VS-2EYH01-M3/HFRED PT RECTIFIER SLIMSMAW Vishay General Semiconductor - Diodes Division |
1,946 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 12pF @ 200V | 28 ns | 2 µA @ 100 V | 100 V | 2A | -55°C ~ 175°C | 930 mV @ 2 A |
|
SB550-E3/51DIODE SCHOTTKY 50V 5A DO201AD Vishay General Semiconductor - Diodes Division |
3,925 | - |
RFQ |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 500 µA @ 50 V | 50 V | 5A | -65°C ~ 150°C | 650 mV @ 5 A | ||
|
UHB10FT-E3/8WDIODE GEN PURP 300V 10A D2PAK Vishay General Semiconductor - Diodes Division |
2,609 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 35 ns | 5 µA @ 300 V | 300 V | 10A | -55°C ~ 175°C | 1.2 V @ 10 A | |
|
|
VS-10ETS12SPBFDIODE GEN PURP 1.2KV 10A D2PAK Vishay General Semiconductor - Diodes Division |
2,452 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | - | 50 µA @ 1200 V | 1200 V | 10A | -40°C ~ 150°C | 1.1 V @ 10 A | |
|
|
V10P10HE3/86ADIODE SCHOTTKY 100V 10A TO277A Vishay General Semiconductor - Diodes Division |
3,500 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 150 µA @ 100 V | 100 V | 10A | -40°C ~ 150°C | 680 mV @ 10 A |
|
FESE16DT-E3/45DIODE GEN PURP 200V 16A TO220AC Vishay General Semiconductor - Diodes Division |
3,785 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 175pF @ 4V, 1MHz | 35 ns | 10 µA @ 200 V | 200 V | 16A | -65°C ~ 150°C | 975 mV @ 16 A | ||
|
|
V12P10HE3/86ADIODE SCHOTTKY 100V 12A TO277A Vishay General Semiconductor - Diodes Division |
2,428 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 250 µA @ 100 V | 100 V | 12A | -40°C ~ 150°C | 700 mV @ 12 A |
|
|
FESE16FT-E3/45DIODE GEN PURP 300V 16A TO220AC Vishay General Semiconductor - Diodes Division |
2,783 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 175pF @ 4V, 1MHz | 50 ns | 10 µA @ 300 V | 300 V | 16A | -65°C ~ 150°C | 1.3 V @ 16 A | ||
|
|
V12P10HE3/87ADIODE SCHOTTKY 100V 12A TO277A Vishay General Semiconductor - Diodes Division |
2,632 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 250 µA @ 100 V | 100 V | 12A | -40°C ~ 150°C | 700 mV @ 12 A |
|
|
FESE16GT-E3/45DIODE GEN PURP 400V 16A TO220AC Vishay General Semiconductor - Diodes Division |
2,812 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 175pF @ 4V, 1MHz | 50 ns | 10 µA @ 400 V | 400 V | 16A | -65°C ~ 150°C | 1.3 V @ 16 A | ||
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SGL41-20/1DIODE SCHOTTKY 20V 1A DO213AB Vishay General Semiconductor - Diodes Division |
3,651 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | 110pF @ 4V, 1MHz | - | 500 µA @ 20 V | 20 V | 1A | -55°C ~ 125°C | 500 mV @ 1 A | |
|
|
FESE8DT-E3/45DIODE GEN PURP 200V 8A TO220AC Vishay General Semiconductor - Diodes Division |
2,386 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 85pF @ 4V, 1MHz | 35 ns | 10 µA @ 200 V | 200 V | 8A | -55°C ~ 150°C | 950 mV @ 8 A | |
|
|
FESE8FT-E3/45DIODE GEN PURP 300V 8A TO220AC Vishay General Semiconductor - Diodes Division |
2,031 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 85pF @ 4V, 1MHz | 50 ns | 10 µA @ 300 V | 300 V | 8A | -55°C ~ 150°C | 1.3 V @ 8 A |
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