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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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UH2DHE3_A/IDIODE GEN PURP 200V 2A DO214AA Vishay General Semiconductor - Diodes Division |
3,694 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 42pF @ 4V, 1MHz | 25 ns | 2 µA @ 200 V | 200 V | 2A | -55°C ~ 175°C | 1.05 V @ 2 A |
|
GP15B-E3/73DIODE GEN PURP 100V 1.5A DO204AC Vishay General Semiconductor - Diodes Division |
3,974 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 3.5 µs | 5 µA @ 100 V | 100 V | 1.5A | -65°C ~ 175°C | 1.1 V @ 1.5 A |
|
UH6PDHM3_A/HDIODE GEN PURP 200V 6A TO277A Vishay General Semiconductor - Diodes Division |
2,789 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 80pF @ 4V, 1MHz | 25 ns | 10 µA @ 200 V | 200 V | 6A | -55°C ~ 175°C | 1.05 V @ 6 A |
|
|
GP15BHE3/73DIODE GEN PURP 100V 1.5A DO204AC Vishay General Semiconductor - Diodes Division |
2,022 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 3.5 µs | 5 µA @ 100 V | 100 V | 1.5A | -65°C ~ 175°C | 1.1 V @ 1.5 A |
|
|
UH6PDHM3_A/IDIODE GEN PURP 200V 6A TO277A Vishay General Semiconductor - Diodes Division |
3,741 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 80pF @ 4V, 1MHz | 25 ns | 10 µA @ 200 V | 200 V | 6A | -55°C ~ 175°C | 1.05 V @ 6 A |
|
|
GP15D-E3/73DIODE GEN PURP 200V 1.5A DO204AC Vishay General Semiconductor - Diodes Division |
2,641 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 3.5 µs | 5 µA @ 200 V | 200 V | 1.5A | -65°C ~ 175°C | 1.1 V @ 1.5 A |
|
NS8ATHE3_A/PDIODE GEN PURP 50V 8A TO220AC Vishay General Semiconductor - Diodes Division |
3,976 | - |
RFQ |
Scheda tecnica |
Tube | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 55pF @ 4V, 1MHz | - | 10 µA @ 50 V | 50 V | 8A | -55°C ~ 150°C | 1.1 V @ 8 A |
|
|
NS8BTHE3_A/PDIODE GEN PURP 100V 8A TO220AC Vishay General Semiconductor - Diodes Division |
3,941 | - |
RFQ |
Scheda tecnica |
Tube | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 55pF @ 4V, 1MHz | - | 10 µA @ 100 V | 100 V | 8A | -55°C ~ 150°C | 1.1 V @ 8 A |
|
|
NS8DTHE3_A/PDIODE GEN PURP 200V 8A TO220AC Vishay General Semiconductor - Diodes Division |
3,776 | - |
RFQ |
Scheda tecnica |
Tube | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 55pF @ 4V, 1MHz | - | 10 µA @ 200 V | 200 V | 8A | -55°C ~ 150°C | 1.1 V @ 8 A |
|
RS3JHE3/9ATDIODE GEN PURP 600V 3A DO214AB Vishay General Semiconductor - Diodes Division |
3,056 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 34pF @ 4V, 1MHz | 250 ns | 10 µA @ 600 V | 600 V | 3A | -55°C ~ 150°C | 1.3 V @ 2.5 A | |
|
|
NS8GTHE3_A/PDIODE GEN PURP 400V 8A TO220AC Vishay General Semiconductor - Diodes Division |
3,955 | - |
RFQ |
Scheda tecnica |
Tube | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 55pF @ 4V, 1MHz | - | 10 µA @ 400 V | 400 V | 8A | -55°C ~ 150°C | 1.1 V @ 8 A |
|
|
RS3KHE3/9ATDIODE GEN PURP 800V 3A DO214AB Vishay General Semiconductor - Diodes Division |
2,608 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 34pF @ 4V, 1MHz | 500 ns | 10 µA @ 800 V | 800 V | 3A | -55°C ~ 150°C | 1.3 V @ 2.5 A | |
|
VS-3EJH02-M3/6BDIODE GEN PURP 200V 3A DO221AC Vishay General Semiconductor - Diodes Division |
13,996 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 30 ns | 2 µA @ 200 V | 200 V | 3A | -65°C ~ 175°C | 930 mV @ 3 A |
|
|
NS8JTHE3_A/PDIODE GEN PURP 600V 8A TO220AC Vishay General Semiconductor - Diodes Division |
3,171 | - |
RFQ |
Scheda tecnica |
Tube | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 55pF @ 4V, 1MHz | - | 10 µA @ 600 V | 600 V | 8A | -55°C ~ 150°C | 1.1 V @ 8 A |
|
|
VS-2EJH02HM3/6BDIODE GEN PURP 200V 2A DO221AC Vishay General Semiconductor - Diodes Division |
10,337 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 2 µA @ 200 V | 200 V | 2A | -65°C ~ 175°C | 930 mV @ 2 A |
|
S1AHE3/5ATDIODE GEN PURP 50V 1A DO214AC Vishay General Semiconductor - Diodes Division |
2,034 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 12pF @ 4V, 1MHz | 1.8 µs | 1 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
|
|
NS8KTHE3_A/PDIODE GEN PURP 800V 8A TO220AC Vishay General Semiconductor - Diodes Division |
2,658 | - |
RFQ |
Scheda tecnica |
Tube | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 55pF @ 4V, 1MHz | - | 10 µA @ 800 V | 800 V | 8A | -55°C ~ 150°C | 1.1 V @ 8 A |
|
|
S1BA-E3/5ATDIODE GEN PURP 100V 1A DO214AC Vishay General Semiconductor - Diodes Division |
3,186 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 8pF @ 4V, 1MHz | 1 µs | 3 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
|
|
NS8MTHE3_A/PDIODE GEN PURP 1KV 8A TO220AC Vishay General Semiconductor - Diodes Division |
3,958 | - |
RFQ |
Scheda tecnica |
Tube | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 55pF @ 4V, 1MHz | - | 10 µA @ 1000 V | 1000 V | 8A | -55°C ~ 150°C | 1.1 V @ 8 A |
|
|
S1BHE3/5ATDIODE GEN PURP 100V 1A DO214AC Vishay General Semiconductor - Diodes Division |
2,231 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 1.8 µs | 1 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A |
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