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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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RGP10KE-E3/53DIODE GEN PURP 800V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,396 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 800 V | 800 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
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GP10K-E3/73DIODE GEN PURP 800V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,257 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 7pF @ 4V, 1MHz | 3 µs | 5 µA @ 800 V | 800 V | 1A | -65°C ~ 175°C | 1.2 V @ 1 A |
|
|
RGP10KE-E3/91DIODE GEN PURP 800V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,098 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 800 V | 800 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
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GP10KHE3/73DIODE GEN PURP 800V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,720 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 7pF @ 4V, 1MHz | 3 µs | 5 µA @ 800 V | 800 V | 1A | -65°C ~ 175°C | 1.2 V @ 1 A |
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|
RGP10KEHE3/53DIODE GEN PURP 600V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,305 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | Automotive, AEC-Q101, Superectifier® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 600 V | 600 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
|
GP10ME-E3/73DIODE GEN PURP 1KV 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,364 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 7pF @ 4V, 1MHz | 3 µs | 5 µA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | 1.2 V @ 1 A |
|
|
RGP10KEHE3/91DIODE GEN PURP 800V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,907 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | Automotive, AEC-Q101, Superectifier® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 800 V | 800 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
|
GP10MEHE3/73DIODE GEN PURP 1KV 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,443 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 7pF @ 4V, 1MHz | 3 µs | 5 µA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | 1.2 V @ 1 A |
|
|
BYX10GP-E3/54DIODE GEN PURP 1.6KV 360MA DO204 Vishay General Semiconductor - Diodes Division |
1,114 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 2 µs | 1 µA @ 1600 V | 1600 V | 360mA | -65°C ~ 175°C | 1.6 V @ 2 A | |
|
|
GP10MHE3/73DIODE GEN PURP 1KV 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,494 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 7pF @ 4V, 1MHz | 3 µs | 5 µA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | 1.2 V @ 1 A |
|
|
GP10Q-E3/73DIODE GEN PURP 1.2KV 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,139 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 7pF @ 4V, 1MHz | 3 µs | 5 µA @ 1200 V | 1200 V | 1A | -65°C ~ 150°C | 1.2 V @ 1 A |
|
|
GP10QHE3/73DIODE GEN PURP 1.2KV 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,215 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 7pF @ 4V, 1MHz | 3 µs | 5 µA @ 1200 V | 1200 V | 1A | -65°C ~ 150°C | 1.2 V @ 1 A |
|
|
GP10THE3/73DIODE GEN PURP 1.3KV 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,634 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 5pF @ 4V, 1MHz | 3 µs | 5 µA @ 1300 V | 1300 V | 1A | -65°C ~ 150°C | 1.3 V @ 1 A |
|
|
GP10V-E3/73DIODE GEN PURP 1.4KV 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,118 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 5pF @ 4V, 1MHz | 3 µs | 5 µA @ 1400 V | 1400 V | 1A | -65°C ~ 150°C | 1.3 V @ 1 A |
|
|
GP10VHE3/73DIODE GEN PURP 1.4KV 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,537 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 5pF @ 4V, 1MHz | 3 µs | 5 µA @ 1400 V | 1400 V | 1A | -65°C ~ 150°C | 1.3 V @ 1 A |
|
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GP10WHE3/73DIODE GEN PURP 1.5KV 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,134 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 5pF @ 4V, 1MHz | 3 µs | 5 µA @ 1500 V | 1500 V | 1A | -65°C ~ 150°C | 1.3 V @ 1 A |
|
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GP10YE-E3/73DIODE GEN PURP 1.6KV 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,709 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 5pF @ 4V, 1MHz | 3 µs | 5 µA @ 1600 V | 1600 V | 1A | -65°C ~ 150°C | 1.3 V @ 1 A |
|
UH2DHE3_A/HDIODE GEN PURP 200V 2A DO214AA Vishay General Semiconductor - Diodes Division |
2,279 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 42pF @ 4V, 1MHz | 25 ns | 2 µA @ 200 V | 200 V | 2A | -55°C ~ 175°C | 1.05 V @ 2 A |
|
|
GP10YEHE3/73DIODE GEN PURP 1.6KV 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,267 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 5pF @ 4V, 1MHz | 3 µs | 5 µA @ 1600 V | 1600 V | 1A | -65°C ~ 150°C | 1.3 V @ 1 A |
|
|
GP10YHE3/73DIODE GEN PURP 1.6KV 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,499 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 5pF @ 4V, 1MHz | 3 µs | 5 µA @ 1600 V | 1600 V | 1A | -65°C ~ 150°C | 1.3 V @ 1 A |
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