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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
8ETH03SDIODE GEN PURP 300V 8A D2PAK Vishay General Semiconductor - Diodes Division |
3,569 | - |
RFQ |
Scheda tecnica |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 35 ns | 20 µA @ 300 V | 300 V | 8A | -65°C ~ 175°C | 1.25 V @ 8 A |
|
SUF30G-E3/73DIODE GEN PURP 400V 3A P600 Vishay General Semiconductor - Diodes Division |
2,968 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 35 ns | 10 µA @ 400 V | 400 V | 3A | -55°C ~ 150°C | 1.8 V @ 3 A | |
|
VS-4ESH01-M3/86ADIODE GEN PURP 100V 4A TO277A Vishay General Semiconductor - Diodes Division |
1,470 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 20 ns | 2 µA @ 100 V | 100 V | 4A | -65°C ~ 175°C | 930 mV @ 4 A |
|
|
SS3P5LHM3_A/HDIODE SCHOTTKY 50V 3A TO277A Vishay General Semiconductor - Diodes Division |
1,243 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 150 µA @ 50 V | 50 V | 3A | -55°C ~ 150°C | 600 mV @ 3 A |
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|
V3PM10-M3/HSCHOTTKY RECTIFIER 3A 100V SMP Vishay General Semiconductor - Diodes Division |
2,679 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 300pF @ 4V, 1MHz | - | 200 µA @ 100 V | 100 V | 2.1A | -40°C ~ 175°C | 560 mV @ 1.5 A |
|
8ETH06DIODE GEN PURP 600V 8A TO220AC Vishay General Semiconductor - Diodes Division |
2,848 | - |
RFQ |
Scheda tecnica |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 25 ns | 50 µA @ 600 V | 600 V | 8A | -65°C ~ 175°C | 2.4 V @ 8 A |
|
|
SUF30J-E3/73DIODE GEN PURP 600V 3A P600 Vishay General Semiconductor - Diodes Division |
3,766 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 35 ns | 10 µA @ 600 V | 600 V | 3A | -55°C ~ 150°C | 2 V @ 3 A | |
|
|
8ETH03DIODE GEN PURP 300V 8A TO220AC Vishay General Semiconductor - Diodes Division |
2,658 | - |
RFQ |
Scheda tecnica |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 35 ns | 20 µA @ 300 V | 300 V | 8A | -65°C ~ 175°C | 1.25 V @ 8 A |
|
TVR06J-E3/73DIODE GEN PURP 600V 600MA DO204 Vishay General Semiconductor - Diodes Division |
2,755 | - |
RFQ |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | - | 10 µA @ 600 V | 600 V | 600mA | -65°C ~ 175°C | 1.4 V @ 600 mA | |
|
8ETH06-1DIODE GEN PURP 600V 8A TO262 Vishay General Semiconductor - Diodes Division |
3,092 | - |
RFQ |
Scheda tecnica |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 25 ns | 50 µA @ 600 V | 600 V | 8A | -65°C ~ 175°C | 2.4 V @ 8 A |
|
|
TVR06JHE3/73DIODE GEN PURP 600V 600MA DO204 Vishay General Semiconductor - Diodes Division |
3,905 | - |
RFQ |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | - | 10 µA @ 600 V | 600 V | 600mA | -65°C ~ 175°C | 1.4 V @ 600 mA | |
|
|
MBRB1635DIODE SCHOTTKY 35V 16A D2PAK Vishay General Semiconductor - Diodes Division |
2,033 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 200 µA @ 35 V | 35 V | 16A | -65°C ~ 150°C | 630 mV @ 16 A | |
|
|
TVR10G-E3/73DIODE GEN PURP 400V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,005 | - |
RFQ |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 300 ns | - | 400 V | 1A | -65°C ~ 175°C | - | ||
|
|
MBRB1645DIODE SCHOTTKY 45V 16A D2PAK Vishay General Semiconductor - Diodes Division |
3,593 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 200 µA @ 45 V | 45 V | 16A | -65°C ~ 150°C | 630 mV @ 16 A | |
|
|
TVR10GHE3/73DIODE GEN PURP 400V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,109 | - |
RFQ |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 300 ns | - | 400 V | 1A | -65°C ~ 175°C | - | ||
|
|
8ETH06SDIODE GEN PURP 600V 8A D2PAK Vishay General Semiconductor - Diodes Division |
2,299 | - |
RFQ |
Scheda tecnica |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 25 ns | 50 µA @ 600 V | 600 V | 8A | -65°C ~ 175°C | 2.4 V @ 8 A |
|
BYW32-TAPDIODE AVALANCHE 200V 2A SOD57 Vishay General Semiconductor - Diodes Division |
8,499 | - |
RFQ |
Scheda tecnica |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 200 ns | 5 µA @ 200 V | 200 V | 2A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
|
BYW32-TRDIODE AVALANCHE 200V 2A SOD57 Vishay General Semiconductor - Diodes Division |
4,093 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 200 ns | 5 µA @ 200 V | 200 V | 2A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
UG2G-E3/73DIODE GEN PURP 400V 2A DO204AC Vishay General Semiconductor - Diodes Division |
2,035 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 25 ns | 5 µA @ 400 V | 400 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A | |
|
HFA08SD60SDIODE GEN PURP 600V 8A DPAK Vishay General Semiconductor - Diodes Division |
3,363 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 55 ns | 5 µA @ 600 V | 600 V | 8A | -55°C ~ 150°C | 1.7 V @ 8 A |
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