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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VSB3200-E3/73DIODE SCHOTTKY 200V 3A DO201AD Vishay General Semiconductor - Diodes Division |
3,859 | - |
RFQ |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 175pF @ 4V, 1MHz | - | - | 200 V | 3A | -40°C ~ 150°C | - | ||
|
|
1N5625GPHE3/54DIODE GEN PURP 400V 3A DO201AD Vishay General Semiconductor - Diodes Division |
2,455 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 40pF @ 4V, 1MHz | 3 µs | 5 µA @ 400 V | 400 V | 3A | -65°C ~ 175°C | 1 V @ 3 A |
|
HFA04SD60SDIODE GEN PURP 600V 4A DPAK Vishay General Semiconductor - Diodes Division |
3,909 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 42 ns | 3 µA @ 600 V | 600 V | 4A | -55°C ~ 150°C | 1.8 V @ 4 A | |
|
1N3611GPHE3/54DIODE GEN PURP 200V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,582 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101, Superectifier® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 8pF @ 4V, 1MHz | 2 µs | 1 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1 V @ 1 A |
|
|
1N5626GPHE3/54DIODE GEN PURP 600V 3A DO201AD Vishay General Semiconductor - Diodes Division |
2,170 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 40pF @ 4V, 1MHz | 3 µs | 5 µA @ 600 V | 600 V | 3A | -65°C ~ 175°C | 1 V @ 3 A |
|
MBRB1035DIODE SCHOTTKY 35V 10A D2PAK Vishay General Semiconductor - Diodes Division |
2,988 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 100 µA @ 35 V | 35 V | 10A | -65°C ~ 150°C | 840 mV @ 20 A | |
|
|
1N3612GPHE3/54DIODE GEN PURP 400V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,043 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101, Superectifier® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 2 µs | 1 µA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1 V @ 1 A |
|
|
1N5627GPHE3/54DIODE GEN PURP 800V 3A DO201AD Vishay General Semiconductor - Diodes Division |
2,118 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 40pF @ 4V, 1MHz | 3 µs | 5 µA @ 800 V | 800 V | 3A | -65°C ~ 175°C | 1 V @ 3 A |
|
30EPH03DIODE GEN PURP 300V 30A TO247AC Vishay General Semiconductor - Diodes Division |
3,850 | - |
RFQ |
Scheda tecnica |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 55 ns | 60 µA @ 300 V | 300 V | 30A | -65°C ~ 175°C | 1.25 V @ 30 A |
|
|
1N3613GPHE3/54DIODE GEN PURP 600V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,730 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101, Superectifier® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 2 µs | 1 µA @ 600 V | 600 V | 1A | -65°C ~ 175°C | 1 V @ 1 A |
|
AGP15-400-E3/54DIODE AVALANCHE 400V 1.5A DO204 Vishay General Semiconductor - Diodes Division |
2,306 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Obsolete | Through Hole | - | 2 µs | 5 µA @ 400 V | 400 V | 1.5A | -65°C ~ 175°C | 1.1 V @ 1.5 A |
|
15ETH06-1DIODE GEN PURP 600V 15A TO262 Vishay General Semiconductor - Diodes Division |
3,247 | - |
RFQ |
Scheda tecnica |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 35 ns | 50 µA @ 600 V | 600 V | 15A | -65°C ~ 175°C | 2.2 V @ 15 A |
|
|
GP15DHE3/73DIODE GEN PURP 200V 1.5A DO204AC Vishay General Semiconductor - Diodes Division |
2,538 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 3.5 µs | 5 µA @ 200 V | 200 V | 1.5A | -65°C ~ 175°C | 1.1 V @ 1.5 A |
|
|
1N3957GPHE3/54DIODE GEN PURP 1KV 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,945 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101, Superectifier® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 8pF @ 4V, 1MHz | 2 µs | 1 µA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | 1 V @ 1 A |
|
|
AGP15-400HE3/54DIODE AVALANCHE 400V 1.5A DO204 Vishay General Semiconductor - Diodes Division |
2,735 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Obsolete | Through Hole | - | 2 µs | 5 µA @ 400 V | 400 V | 1.5A | -65°C ~ 175°C | 1.1 V @ 1.5 A |
|
|
15ETH06SDIODE GEN PURP 600V 15A D2PAK Vishay General Semiconductor - Diodes Division |
3,461 | - |
RFQ |
Scheda tecnica |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 35 ns | 50 µA @ 600 V | 600 V | 15A | -65°C ~ 175°C | 2.2 V @ 15 A |
|
|
MUR460-M3/73DIODE GEN PURP 600V 4A DO201AD Vishay General Semiconductor - Diodes Division |
1,722 | - |
RFQ |
Scheda tecnica |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 75 ns | 10 µA @ 600 V | 600 V | 4A | -65°C ~ 175°C | 1.28 V @ 4 A | |
|
V8PM6HM3/HDIODE SCHOTTKY 8A 60V SMPC Vishay General Semiconductor - Diodes Division |
1,223 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 1150pF @ 4V, 1MHz | - | 600 µA @ 60 V | 60 V | 8A | -40°C ~ 175°C | 640 mV @ 8 A |
|
BYV26A-TAPDIODE AVALANCHE 200V 1A SOD57 Vishay General Semiconductor - Diodes Division |
1,061 | - |
RFQ |
Scheda tecnica |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 30 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 175°C | 2.5 V @ 1 A | |
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VS-1ENH01-M3/84AFRED PT RECTIFIER 1A SMP Vishay General Semiconductor - Diodes Division |
1,776 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 28 ns | 2 µA @ 100 V | 100 V | 1A | -55°C ~ 175°C | 920 mV @ 1 A |
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