Diodi-Raddrizzatori-Singoli

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
VS-15ETL06-N3

VS-15ETL06-N3

DIODE GEN PURP 600V 15A TO220AC

Vishay General Semiconductor - Diodes Division
2,964 -

RFQ

VS-15ETL06-N3

Scheda tecnica

Tube FRED Pt® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 270 ns 10 µA @ 600 V 600 V 15A -65°C ~ 175°C 1.05 V @ 15 A
VS-15TQ060-N3

VS-15TQ060-N3

DIODE SCHOTTKY 60V 15A TO220AC

Vishay General Semiconductor - Diodes Division
3,104 -

RFQ

VS-15TQ060-N3

Scheda tecnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Through Hole 720pF @ 5V, 1MHz - 800 µA @ 60 V 60 V 15A -55°C ~ 150°C 820 mV @ 30 A
VS-18TQ040-N3

VS-18TQ040-N3

DIODE SCHOTTKY 40V 18A TO220AC

Vishay General Semiconductor - Diodes Division
2,297 -

RFQ

VS-18TQ040-N3

Scheda tecnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Through Hole 1400pF @ 5V, 1MHz - 2.5 mA @ 40 V 40 V 18A -55°C ~ 175°C 720 mV @ 36 A
VS-19TQ015-N3

VS-19TQ015-N3

DIODE SCHOTTKY 15V 19A TO220AC

Vishay General Semiconductor - Diodes Division
3,711 -

RFQ

VS-19TQ015-N3

Scheda tecnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Through Hole 2000pF @ 5V, 1MHz - 10.5 mA @ 15 V 15 V 19A -55°C ~ 125°C 460 mV @ 38 A
VS-6TQ040-N3

VS-6TQ040-N3

DIODE SCHOTTKY 40V 6A TO220AC

Vishay General Semiconductor - Diodes Division
3,840 -

RFQ

VS-6TQ040-N3

Scheda tecnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Through Hole 400pF @ 5V, 1MHz - 800 µA @ 40 V 40 V 6A -55°C ~ 175°C 600 mV @ 6 A
VS-8ETH03-N3

VS-8ETH03-N3

DIODE GEN PURP 300V 8A TO220AC

Vishay General Semiconductor - Diodes Division
3,556 -

RFQ

VS-8ETH03-N3

Scheda tecnica

Tube FRED Pt® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 27 ns 20 µA @ 300 V 300 V 8A -65°C ~ 175°C 1.25 V @ 8 A
VS-8ETL06-N3

VS-8ETL06-N3

DIODE GEN PURP 600V 8A TO220AC

Vishay General Semiconductor - Diodes Division
3,003 -

RFQ

VS-8ETL06-N3

Scheda tecnica

Tube FRED Pt® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 170 ns 5 µA @ 600 V 600 V 8A -65°C ~ 175°C 1.05 V @ 8 A
VS-8ETU04-N3

VS-8ETU04-N3

DIODE GEN PURP 400V 8A TO220AC

Vishay General Semiconductor - Diodes Division
2,813 -

RFQ

VS-8ETU04-N3

Scheda tecnica

Tube FRED Pt® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 43 ns 10 µA @ 400 V 400 V 8A -65°C ~ 175°C 1.3 V @ 8 A
VS-8TQ060-N3

VS-8TQ060-N3

DIODE GEN PURP 60V 8A TO220AC

Vishay General Semiconductor - Diodes Division
3,058 -

RFQ

VS-8TQ060-N3

Scheda tecnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - - 50 µA @ 60 V 60 V 8A -55°C ~ 175°C 720 mV @ 8 A
VS-8TQ100-N3

VS-8TQ100-N3

DIODE SCHOTTKY 100V 8A TO220AC

Vishay General Semiconductor - Diodes Division
2,848 -

RFQ

VS-8TQ100-N3

Scheda tecnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Through Hole 500pF @ 5V, 1MHz - 550 µA @ 100 V 100 V 8A -55°C ~ 175°C 720 mV @ 8 A
VS-HFA04TB60-N3

VS-HFA04TB60-N3

DIODE GEN PURP 600V 4A TO220AC

Vishay General Semiconductor - Diodes Division
2,800 -

RFQ

VS-HFA04TB60-N3

Scheda tecnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 42 ns 3 µA @ 600 V 600 V 4A -55°C ~ 150°C 1.8 V @ 4 A
VS-HFA08TA60C-N3

VS-HFA08TA60C-N3

DIODE GEN PURP 600V 4A TO220AB

Vishay General Semiconductor - Diodes Division
3,567 -

RFQ

VS-HFA08TA60C-N3

Scheda tecnica

Tube HEXFRED® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 155 ns 3 µA @ 600 V 600 V 4A -55°C ~ 150°C 1.8 V @ 4 A
VS-HFA15TB60-N3

VS-HFA15TB60-N3

DIODE GEN PURP 600V 15A TO220AC

Vishay General Semiconductor - Diodes Division
2,563 -

RFQ

VS-HFA15TB60-N3

Scheda tecnica

Tube HEXFRED® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 60 ns 10 µA @ 600 V 600 V 15A -55°C ~ 150°C 1.7 V @ 15 A
VS-HFA16TB120-N3

VS-HFA16TB120-N3

DIODE GEN PURP 1.2KV 16A TO220AC

Vishay General Semiconductor - Diodes Division
2,589 -

RFQ

VS-HFA16TB120-N3

Scheda tecnica

Tube HEXFRED® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 135 ns 20 µA @ 1200 V 1200 V 16A -55°C ~ 150°C 3 V @ 16 A
GPP60A-E3/73

GPP60A-E3/73

DIODE GEN PURP 50V 6A P600

Vishay General Semiconductor - Diodes Division
2,945 -

RFQ

GPP60A-E3/73

Scheda tecnica

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole - 5.5 µs 5 µA @ 50 V 50 V 6A -55°C ~ 175°C 1.1 V @ 6 A
1N4937GPEHE3/54

1N4937GPEHE3/54

DIODE GEN PURP 600V 1A DO204AL

Vishay General Semiconductor - Diodes Division
3,593 -

RFQ

1N4937GPEHE3/54

Scheda tecnica

Tape & Reel (TR) SUPERECTIFIER® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole 15pF @ 4V, 1MHz 200 ns 5 µA @ 600 V 600 V 1A -65°C ~ 175°C 1.2 V @ 1 A
BY229B-600HE3/81

BY229B-600HE3/81

DIODE GEN PURP 600V 8A TO263AB

Vishay General Semiconductor - Diodes Division
2,867 -

RFQ

BY229B-600HE3/81

Scheda tecnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Surface Mount - 145 ns 10 µA @ 600 V 600 V 8A -40°C ~ 150°C 1.85 V @ 20 A
GPP60AHE3/73

GPP60AHE3/73

DIODE GEN PURP 50V 6A P600

Vishay General Semiconductor - Diodes Division
3,878 -

RFQ

GPP60AHE3/73

Scheda tecnica

Tape & Box (TB) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole - 5.5 µs 5 µA @ 50 V 50 V 6A -55°C ~ 175°C 1.1 V @ 6 A
1N4937GPHE3/54

1N4937GPHE3/54

DIODE GEN PURP 600V 1A DO204AL

Vishay General Semiconductor - Diodes Division
2,955 -

RFQ

1N4937GPHE3/54

Scheda tecnica

Tape & Reel (TR) SUPERECTIFIER® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole 15pF @ 4V, 1MHz 200 ns 5 µA @ 600 V 600 V 1A -65°C ~ 175°C 1.2 V @ 1 A
BY229B-800-E3/81

BY229B-800-E3/81

DIODE GEN PURP 800V 8A TO263AB

Vishay General Semiconductor - Diodes Division
2,844 -

RFQ

BY229B-800-E3/81

Scheda tecnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Surface Mount - 145 ns 10 µA @ 800 V 800 V 8A -40°C ~ 150°C 1.85 V @ 20 A
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