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| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VS-8EWS08STRPBFDIODE GEN PURP 800V 8A D-PAK Vishay General Semiconductor - Diodes Division |
3,877 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | - | 50 µA @ 800 V | 800 V | 8A | -55°C ~ 150°C | 1.1 V @ 8 A | |
|
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VS-8EWS08STRRPBFDIODE GEN PURP 800V 8A D-PAK Vishay General Semiconductor - Diodes Division |
2,515 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | - | 50 µA @ 800 V | 800 V | 8A | -55°C ~ 150°C | 1.1 V @ 8 A | |
|
|
VS-8EWS12STRLPBFDIODE GEN PURP 1.2KV 8A D-PAK Vishay General Semiconductor - Diodes Division |
2,887 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | - | 50 µA @ 1200 V | 1200 V | 8A | -55°C ~ 150°C | 1.1 V @ 8 A | |
|
|
VS-8EWS12STRRPBFDIODE GEN PURP 1.2KV 8A D-PAK Vishay General Semiconductor - Diodes Division |
2,221 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | - | 50 µA @ 1200 V | 1200 V | 8A | -55°C ~ 150°C | 1.1 V @ 8 A | |
|
|
VS-8EWS16STRLPBFDIODE GEN PURP 1.6KV 8A D-PAK Vishay General Semiconductor - Diodes Division |
2,214 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | - | 50 µA @ 1600 V | 1600 V | 8A | -40°C ~ 150°C | 1.1 V @ 8 A | |
|
|
VS-8EWS16STRPBFDIODE GEN PURP 1.6KV 8A D-PAK Vishay General Semiconductor - Diodes Division |
2,084 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | - | 50 µA @ 1600 V | 1600 V | 8A | -40°C ~ 150°C | 1.1 V @ 8 A | |
|
|
VS-8EWS16STRRPBFDIODE GEN PURP 1.6KV 8A D-PAK Vishay General Semiconductor - Diodes Division |
3,665 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | - | 50 µA @ 1600 V | 1600 V | 8A | -40°C ~ 150°C | 1.1 V @ 8 A | |
|
VS-8TQ080GSTRLPBFDIODE SCHOTTKY 80V 8A TO263AB Vishay General Semiconductor - Diodes Division |
2,888 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | 500pF @ 5V, 1MHz | - | 280 µA @ 80 V | 80 V | 8A | -55°C ~ 175°C | 720 mV @ 8 A | |
|
|
VS-8TQ080GSTRRPBFDIODE SCHOTTKY 80V 8A TO263AB Vishay General Semiconductor - Diodes Division |
3,878 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | 500pF @ 5V, 1MHz | - | 280 µA @ 80 V | 80 V | 8A | -55°C ~ 175°C | 720 mV @ 8 A | |
|
MPG06BHE3/73DIODE GEN PURP 100V 1A MPG06 Vishay General Semiconductor - Diodes Division |
3,651 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 10pF @ 4V, 1MHz | 600 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A |
|
|
VS-8TQ100GSTRLPBFDIODE SCHOTTKY 100V 8A D2PAK Vishay General Semiconductor - Diodes Division |
3,700 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | 500pF @ 5V, 1MHz | - | 280 µA @ 100 V | 100 V | 8A | -55°C ~ 175°C | 720 mV @ 8 A | |
|
1N5062GPHE3/54DIODE GEN PURP 800V 1A DO204AC Vishay General Semiconductor - Diodes Division |
2,062 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | 2 µs | 5 µA @ 800 V | 800 V | 1A | -65°C ~ 175°C | 1.2 V @ 1 A |
|
BY254GPHE3/54DIODE GEN PURP 800V 3A DO201AD Vishay General Semiconductor - Diodes Division |
3,358 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 40pF @ 4V, 1MHz | 3 µs | 5 µA @ 800 V | 800 V | 3A | -65°C ~ 175°C | 1.1 V @ 3 A |
|
|
VS-8TQ100GSTRRPBFDIODE SCHOTTKY 100V 8A D2PAK Vishay General Semiconductor - Diodes Division |
3,393 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | 500pF @ 5V, 1MHz | - | 280 µA @ 100 V | 100 V | 8A | -55°C ~ 175°C | 720 mV @ 8 A | |
|
|
MPG06DHE3/73DIODE GEN PURP 200V 1A MPG06 Vishay General Semiconductor - Diodes Division |
2,897 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 10pF @ 4V, 1MHz | 600 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A |
|
|
1N5391GPHE3/54DIODE GEN PURP 50V 1.5A DO204AC Vishay General Semiconductor - Diodes Division |
3,664 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | 2 µs | 5 µA @ 50 V | 50 V | 1.5A | -65°C ~ 175°C | 1.4 V @ 1.5 A |
|
|
BY255GPHE3/54DIODE GEN PURP 1.3KV 3A DO201AD Vishay General Semiconductor - Diodes Division |
3,626 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 40pF @ 4V, 1MHz | 3 µs | 5 µA @ 1300 V | 1300 V | 3A | -65°C ~ 175°C | 1.1 V @ 3 A |
|
|
MPG06GHE3/73DIODE GEN PURP 400V 1A MPG06 Vishay General Semiconductor - Diodes Division |
2,628 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 10pF @ 4V, 1MHz | 600 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A |
|
|
1N5393GPHE3/54DIODE GEN PURP 200V 1.5A DO204AC Vishay General Semiconductor - Diodes Division |
2,716 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | 2 µs | 5 µA @ 200 V | 200 V | 1.5A | -65°C ~ 175°C | 1.4 V @ 1.5 A |
|
|
BY297P-E3/54DIODE GEN PURP 200V 2A DO201AD Vishay General Semiconductor - Diodes Division |
3,696 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 28pF @ 4V, 1MHz | 500 ns | 10 µA @ 200 V | 200 V | 2A | -50°C ~ 125°C | 1.3 V @ 3 A |
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