Diodi-Raddrizzatori-Singoli

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
VS-30ETH06-1PBF

VS-30ETH06-1PBF

DIODE ULTRA FAST 600V 30A TO262

Vishay General Semiconductor - Diodes Division
2,902 -

RFQ

VS-30ETH06-1PBF

Scheda tecnica

Tube FRED Pt® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole - 35 ns 50 µA @ 600 V 600 V 30A - 2.6 V @ 30 A
VS-STPS20L15GTRLP

VS-STPS20L15GTRLP

DIODE SCHOTTKY 15V 20A D2PAK

Vishay General Semiconductor - Diodes Division
3,790 -

RFQ

VS-STPS20L15GTRLP

Scheda tecnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Surface Mount 2000pF @ 5V, 1MHz - 10 mA @ 15 V 15 V 20A -55°C ~ 125°C 520 mV @ 40 A
VS-STPS20L15GTRRP

VS-STPS20L15GTRRP

DIODE SCHOTTKY 15V 20A D2PAK

Vishay General Semiconductor - Diodes Division
3,545 -

RFQ

VS-STPS20L15GTRRP

Scheda tecnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Surface Mount 2000pF @ 5V, 1MHz - 10 mA @ 15 V 15 V 20A -55°C ~ 125°C 520 mV @ 40 A
VS-10ETF02PBF

VS-10ETF02PBF

DIODE GEN PURP 200V 10A TO220AC

Vishay General Semiconductor - Diodes Division
3,241 -

RFQ

VS-10ETF02PBF

Scheda tecnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole - 200 ns 100 µA @ 200 V 200 V 10A -40°C ~ 150°C 1.2 V @ 10 A
VS-10ETF02SPBF

VS-10ETF02SPBF

DIODE GEN PURP 200V 10A TO263AB

Vishay General Semiconductor - Diodes Division
3,685 -

RFQ

VS-10ETF02SPBF

Scheda tecnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount - 200 ns 100 µA @ 200 V 200 V 10A -40°C ~ 150°C 1.2 V @ 10 A
VS-10ETF04PBF

VS-10ETF04PBF

DIODE GEN PURP 400V 10A TO220AC

Vishay General Semiconductor - Diodes Division
2,843 -

RFQ

VS-10ETF04PBF

Scheda tecnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole - 200 ns 100 µA @ 200 V 400 V 10A -40°C ~ 150°C 1.2 V @ 10 A
MUR160-E3/73

MUR160-E3/73

DIODE GEN PURP 600V 1A DO204AC

Vishay General Semiconductor - Diodes Division
2,784 -

RFQ

MUR160-E3/73

Scheda tecnica

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 75 ns 5 µA @ 600 V 600 V 1A -65°C ~ 175°C 1.25 V @ 1 A
1N5615GPHE3/54

1N5615GPHE3/54

DIODE GEN PURP 200V 1A DO204AC

Vishay General Semiconductor - Diodes Division
3,552 -

RFQ

1N5615GPHE3/54

Scheda tecnica

Tape & Reel (TR) SUPERECTIFIER® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole 25pF @ 4V, 1MHz 150 ns 500 nA @ 200 V 200 V 1A -65°C ~ 175°C 1.2 V @ 1 A
VS-10ETF04SPBF

VS-10ETF04SPBF

DIODE GEN PURP 400V 10A TO263AB

Vishay General Semiconductor - Diodes Division
2,857 -

RFQ

VS-10ETF04SPBF

Scheda tecnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount - 200 ns 100 µA @ 200 V 400 V 10A -40°C ~ 150°C 1.2 V @ 10 A
BY398P-E3/54

BY398P-E3/54

DIODE GEN PURP 400V 3A DO201AD

Vishay General Semiconductor - Diodes Division
3,407 -

RFQ

BY398P-E3/54

Scheda tecnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole 28pF @ 4V, 1MHz 500 ns 10 µA @ 400 V 400 V 3A -50°C ~ 125°C 1.25 V @ 3 A
VS-30ETH06SPBF

VS-30ETH06SPBF

DIODE ULTRA FAST 600V 30A D2PAK

Vishay General Semiconductor - Diodes Division
2,378 -

RFQ

VS-30ETH06SPBF

Scheda tecnica

- RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount - 35 ns 50 µA @ 600 V 600 V 30A -65°C ~ 175°C 2.6 V @ 30 A
P300J-E3/73

P300J-E3/73

DIODE GEN PURP 600V 3A DO201AD

Vishay General Semiconductor - Diodes Division
3,092 -

RFQ

P300J-E3/73

Scheda tecnica

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 30pF @ 4V, 1MHz 2 µs 5 µA @ 600 V 600 V 3A -50°C ~ 150°C 1.2 V @ 3 A
VS-10ETF10SPBF

VS-10ETF10SPBF

DIODE GEN PURP 1KV 10A TO263AB

Vishay General Semiconductor - Diodes Division
2,693 -

RFQ

VS-10ETF10SPBF

Scheda tecnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount - 310 ns 100 µA @ 1000 V 1000 V 10A -40°C ~ 150°C 1.33 V @ 10 A
VS-10ETF12SPBF

VS-10ETF12SPBF

DIODE GEN PURP 1.2KV 10A TO263AB

Vishay General Semiconductor - Diodes Division
3,451 -

RFQ

VS-10ETF12SPBF

Scheda tecnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount - 310 ns 100 µA @ 1000 V 1200 V 10A -40°C ~ 150°C 1.33 V @ 10 A
VS-10ETS08SPBF

VS-10ETS08SPBF

DIODE GEN PURP 800V 10A TO263AB

Vishay General Semiconductor - Diodes Division
3,340 -

RFQ

VS-10ETS08SPBF

Scheda tecnica

Tube RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount - - 50 µA @ 800 V 800 V 10A -40°C ~ 150°C 1.1 V @ 10 A
1N5617GPHE3/54

1N5617GPHE3/54

DIODE GEN PURP 400V 1A DO204AC

Vishay General Semiconductor - Diodes Division
3,795 -

RFQ

1N5617GPHE3/54

Scheda tecnica

Tape & Reel (TR) SUPERECTIFIER® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole 25pF @ 4V, 1MHz 150 ns 500 nA @ 400 V 400 V 1A -65°C ~ 175°C 1.2 V @ 1 A
BY448GPHE3/54

BY448GPHE3/54

DIODE GEN PURP 1.65KV 1.5A DO204

Vishay General Semiconductor - Diodes Division
3,702 -

RFQ

BY448GPHE3/54

Scheda tecnica

Tape & Reel (TR) SUPERECTIFIER® RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole - 20 µs 5 µA @ 1650 V 1650 V 1.5A -65°C ~ 175°C 1.6 V @ 3 A
VS-10ETS10SPBF

VS-10ETS10SPBF

DIODE GEN PURP 1KV 10A TO263AB

Vishay General Semiconductor - Diodes Division
2,400 -

RFQ

VS-10ETS10SPBF

Scheda tecnica

Tube RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount - - 50 µA @ 1000 V 1000 V 10A -40°C ~ 150°C 1.1 V @ 10 A
VS-30EPH06PBF

VS-30EPH06PBF

DIODE GEN PURP 600V 30A TO247AC

Vishay General Semiconductor - Diodes Division
3,123 -

RFQ

VS-30EPH06PBF

Scheda tecnica

Tube FRED Pt® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 35 ns 50 µA @ 600 V 600 V 30A -65°C ~ 175°C 2.6 V @ 30 A
VS-10TQ035-N3

VS-10TQ035-N3

DIODE SCHOTTKY 35V 10A TO-220AC

Vishay General Semiconductor - Diodes Division
3,547 -

RFQ

VS-10TQ035-N3

Scheda tecnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Through Hole 900pF @ 5V, 1MHz - 2 mA @ 40 V 35 V 10A -55°C ~ 175°C 570 mV @ 10 A
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