Diodi-Raddrizzatori-Singoli

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
VS-18TQ035SPBF

VS-18TQ035SPBF

DIODE SCHOTTKY 18A 35V D2PAK

Vishay General Semiconductor - Diodes Division
3,107 -

RFQ

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Surface Mount 1400pF @ 5V, 1MHz - 2.5 mA @ 35 V 35 V 18A -55°C ~ 175°C 600 mV @ 18 A
VS-18TQ045-N3

VS-18TQ045-N3

DIODE SCHOTTKY 18A 45V TO-220AC

Vishay General Semiconductor - Diodes Division
3,364 -

RFQ

VS-18TQ045-N3

Scheda tecnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Through Hole 1400pF @ 5V, 1MHz - 2 mA @ 45 V 45 V 18A -55°C ~ 175°C 600 mV @ 18 A
VS-18TT045-F

VS-18TT045-F

DIODE SCHOTTKY 18A 45V TO-220AC

Vishay General Semiconductor - Diodes Division
3,960 -

RFQ

VS-18TT045-F

Scheda tecnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Through Hole 1350pF @ 5V, 1MHz - 2 mA @ 45 V 45 V 18A -55°C ~ 175°C 600 mV @ 18 A
VS-20ATS08PBF

VS-20ATS08PBF

DIODE GEN PURP 800V 20A TO220AB

Vishay General Semiconductor - Diodes Division
2,954 -

RFQ

VS-20ATS08PBF

Scheda tecnica

Tube RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole - - 100 µA @ 800 V 800 V 20A -40°C ~ 150°C 1.1 V @ 20 A
VS-20ATS12PBF

VS-20ATS12PBF

DIODE GEN PURP 1.2KV 20A TO220AB

Vishay General Semiconductor - Diodes Division
2,489 -

RFQ

VS-20ATS12PBF

Scheda tecnica

Tube RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole - - 100 µA @ 1200 V 1200 V 20A -40°C ~ 150°C 1.1 V @ 20 A
VS-20ETF04SPBF

VS-20ETF04SPBF

DIODE GEN PURP 400V 20A TO263AB

Vishay General Semiconductor - Diodes Division
2,705 -

RFQ

VS-20ETF04SPBF

Scheda tecnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount - 60 ns 100 µA @ 400 V 400 V 20A -40°C ~ 150°C 1.3 V @ 20 A
VS-20ETF08SPBF

VS-20ETF08SPBF

DIODE GEN PURP 800V 20A TO263AB

Vishay General Semiconductor - Diodes Division
3,002 -

RFQ

VS-20ETF08SPBF

Scheda tecnica

Tube RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount - - 100 µA @ 800 V 800 V 20A -40°C ~ 150°C 1.31 V @ 20 A
VS-20ETF10SPBF

VS-20ETF10SPBF

DIODE GEN PURP 1KV 20A TO263AB

Vishay General Semiconductor - Diodes Division
2,696 -

RFQ

VS-20ETF10SPBF

Scheda tecnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount - 95 ns 100 µA @ 1000 V 1000 V 20A -40°C ~ 150°C 1.31 V @ 20 A
VS-20ETS08SPBF

VS-20ETS08SPBF

DIODE GEN PURP 800V 20A TO263AB

Vishay General Semiconductor - Diodes Division
2,201 -

RFQ

VS-20ETS08SPBF

Scheda tecnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount - 95 ns 100 µA @ 800 V 800 V 20A -40°C ~ 150°C 1.1 V @ 20 A
VS-20ETS12SPBF

VS-20ETS12SPBF

DIODE GEN PURP 1.2KV 20A TO220AB

Vishay General Semiconductor - Diodes Division
3,564 -

RFQ

VS-20ETS12SPBF

Scheda tecnica

Tube RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount - - 100 µA @ 1200 V 1200 V 20A -40°C ~ 150°C 1.1 V @ 20 A
VS-20ETS16PBF

VS-20ETS16PBF

DIODE GEN PURP 1.6KV 20A TO220AB

Vishay General Semiconductor - Diodes Division
3,908 -

RFQ

VS-20ETS16PBF

Scheda tecnica

Tube RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole - - 100 µA @ 1600 V 1600 V 20A -40°C ~ 150°C 1.1 V @ 20 A
VS-20L15T-N3

VS-20L15T-N3

DIODE SCHOTTKY 20A TO-220

Vishay General Semiconductor - Diodes Division
2,174 -

RFQ

VS-20L15T-N3

Scheda tecnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Through Hole 2000pF @ 5V, 1MHz - 10 mA @ 15 V 15 V 20A -55°C ~ 125°C 410 mV @ 19 A
VS-20TQ035-N3

VS-20TQ035-N3

DIODE SCHOTTKY 20A TO-220

Vishay General Semiconductor - Diodes Division
2,136 -

RFQ

VS-20TQ035-N3

Scheda tecnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Through Hole - - 2.7 mA @ 35 V 35 V 20A -55°C ~ 150°C 570 mV @ 20 A
VS-20TQ035SPBF

VS-20TQ035SPBF

DIODE SCHOTTKY 20A D2PAK

Vishay General Semiconductor - Diodes Division
3,026 -

RFQ

VS-20TQ035SPBF

Scheda tecnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Surface Mount 1400pF @ 5V, 1MHz - 2.7 mA @ 35 V 35 V 20A -55°C ~ 150°C 570 mV @ 20 A
1N5624GPHE3/54

1N5624GPHE3/54

DIODE GEN PURP 200V 3A DO201AD

Vishay General Semiconductor - Diodes Division
2,488 -

RFQ

1N5624GPHE3/54

Scheda tecnica

Tape & Reel (TR) SUPERECTIFIER® RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole 40pF @ 4V, 1MHz 3 µs 5 µA @ 200 V 200 V 3A -65°C ~ 175°C 1 V @ 3 A
BYD13GGP-E3/54

BYD13GGP-E3/54

DIODE GEN PURP 400V 1A DO204AL

Vishay General Semiconductor - Diodes Division
2,707 -

RFQ

BYD13GGP-E3/54

Scheda tecnica

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole 8pF @ 4V, 1MHz 3 µs 5 µA @ 200 V 400 V 1A -65°C ~ 175°C -
VS-60EPU04PBF

VS-60EPU04PBF

DIODE GEN PURP 400V 60A TO247AC

Vishay General Semiconductor - Diodes Division
2,069 -

RFQ

VS-60EPU04PBF

Scheda tecnica

Tube FRED Pt® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 85 ns 50 µA @ 400 V 400 V 60A -55°C ~ 175°C 1.25 V @ 60 A
RGP02-15EHE3/73

RGP02-15EHE3/73

DIODE GEN PURP 1.5KV 500MA DO204

Vishay General Semiconductor - Diodes Division
3,928 -

RFQ

RGP02-15EHE3/73

Scheda tecnica

Tape & Box (TB) SUPERECTIFIER® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 300 ns 5 µA @ 1500 V 1500 V 500mA -65°C ~ 175°C 1.8 V @ 100 mA
BYD13GGPHE3/54

BYD13GGPHE3/54

DIODE GEN PURP 400V 1A DO204AL

Vishay General Semiconductor - Diodes Division
2,876 -

RFQ

BYD13GGPHE3/54

Scheda tecnica

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 8pF @ 4V, 1MHz - 5 µA @ 200 V 400 V 1A -65°C ~ 175°C -
VS-HFA06PB120PBF

VS-HFA06PB120PBF

DIODE GEN PURP 1.2KV 6A TO247AC

Vishay General Semiconductor - Diodes Division
2,596 -

RFQ

VS-HFA06PB120PBF

Scheda tecnica

Tube HEXFRED® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 80 ns 5 µA @ 1200 V 1200 V 6A -55°C ~ 150°C 3 V @ 6 A
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