Diodi-Raddrizzatori-Singoli

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
RGP02-16EHE3/73

RGP02-16EHE3/73

DIODE GEN PURP 1.6KV 500MA DO204

Vishay General Semiconductor - Diodes Division
2,814 -

RFQ

RGP02-16EHE3/73

Scheda tecnica

Tape & Box (TB) SUPERECTIFIER® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 300 ns 5 µA @ 1600 V 1600 V 500mA -65°C ~ 175°C 1.8 V @ 100 mA
BYD13JGP-E3/54

BYD13JGP-E3/54

DIODE GEN PURP 600V 1A DO204AL

Vishay General Semiconductor - Diodes Division
2,146 -

RFQ

BYD13JGP-E3/54

Scheda tecnica

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole 8pF @ 4V, 1MHz 3 µs 5 µA @ 200 V 600 V 1A -65°C ~ 175°C 1.1 V @ 1 A
VS-HFA08PB120PBF

VS-HFA08PB120PBF

DIODE GEN PURP 1.2KV 8A TO247AC

Vishay General Semiconductor - Diodes Division
2,287 -

RFQ

VS-HFA08PB120PBF

Scheda tecnica

Tube HEXFRED® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 95 ns 10 µA @ 1200 V 1200 V 8A -55°C ~ 150°C 3.3 V @ 8 A
RGP02-17EHE3/73

RGP02-17EHE3/73

DIODE GEN PURP 1.7KV 500MA DO204

Vishay General Semiconductor - Diodes Division
3,676 -

RFQ

RGP02-17EHE3/73

Scheda tecnica

Tape & Box (TB) SUPERECTIFIER® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 300 ns 5 µA @ 1700 V 1700 V 500mA -65°C ~ 175°C 1.8 V @ 100 mA
BYD13JGPHE3/54

BYD13JGPHE3/54

DIODE GEN PURP 600V 1A DO204AL

Vishay General Semiconductor - Diodes Division
3,977 -

RFQ

BYD13JGPHE3/54

Scheda tecnica

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 8pF @ 4V, 1MHz - 5 µA @ 200 V 600 V 1A -65°C ~ 175°C 1.1 V @ 1 A
VS-HFA25PB60PBF

VS-HFA25PB60PBF

DIODE GEN PURP 600V 25A TO247AC

Vishay General Semiconductor - Diodes Division
2,858 -

RFQ

VS-HFA25PB60PBF

Scheda tecnica

Tube HEXFRED® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 75 ns 20 µA @ 600 V 600 V 25A -55°C ~ 150°C 1.7 V @ 25 A
RGP02-18EHE3/73

RGP02-18EHE3/73

DIODE GEN PURP 1.8KV 500MA DO204

Vishay General Semiconductor - Diodes Division
2,962 -

RFQ

RGP02-18EHE3/73

Scheda tecnica

Tape & Box (TB) SUPERECTIFIER® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 300 ns 5 µA @ 1800 V 1800 V 500mA -65°C ~ 175°C 1.8 V @ 100 mA
BYD13KGP-E3/54

BYD13KGP-E3/54

DIODE GEN PURP 800V 1A DO204AL

Vishay General Semiconductor - Diodes Division
3,193 -

RFQ

BYD13KGP-E3/54

Scheda tecnica

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole 8pF @ 4V, 1MHz 3 µs 5 µA @ 200 V 800 V 1A -65°C ~ 175°C -
UB8CT-E3/8W

UB8CT-E3/8W

DIODE GEN PURP 150V 8A TO263AB

Vishay General Semiconductor - Diodes Division
3,077 -

RFQ

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Surface Mount - 20 ns 10 µA @ 150 V 150 V 8A -55°C ~ 150°C 1.02 V @ 8 A
VS-HFA16PB120PBF

VS-HFA16PB120PBF

DIODE GEN PURP 1.2KV 16A TO247AC

Vishay General Semiconductor - Diodes Division
3,807 -

RFQ

VS-HFA16PB120PBF

Scheda tecnica

Tube HEXFRED® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 135 ns 20 µA @ 1200 V 1200 V 16A -55°C ~ 150°C 3 V @ 16 A
RGP10A-E3/73

RGP10A-E3/73

DIODE GEN PURP 50V 1A DO204AL

Vishay General Semiconductor - Diodes Division
3,601 -

RFQ

RGP10A-E3/73

Scheda tecnica

Tape & Box (TB) SUPERECTIFIER® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 150 ns 5 µA @ 50 V 50 V 1A -65°C ~ 175°C 1.3 V @ 1 A
BYD13KGPHE3/54

BYD13KGPHE3/54

DIODE GEN PURP 800V 1A DO204AL

Vishay General Semiconductor - Diodes Division
2,592 -

RFQ

BYD13KGPHE3/54

Scheda tecnica

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 8pF @ 4V, 1MHz 3 µs 5 µA @ 200 V 800 V 1A -65°C ~ 175°C 1.1 V @ 1 A
UB8DT-E3/8W

UB8DT-E3/8W

DIODE GEN PURP 200V 8A TO263AB

Vishay General Semiconductor - Diodes Division
2,158 -

RFQ

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Surface Mount - 20 ns 10 µA @ 200 V 200 V 8A -55°C ~ 150°C 1.02 V @ 8 A
VS-20TQ040-N3

VS-20TQ040-N3

DIODE SCHOTTKY 20A TO-220

Vishay General Semiconductor - Diodes Division
2,261 -

RFQ

VS-20TQ040-N3

Scheda tecnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Through Hole 1400pF @ 5V, 1MHz - 2.7 mA @ 40 V 40 V 20A -55°C ~ 150°C 570 mV @ 20 A
VS-20TQ040SPBF

VS-20TQ040SPBF

DIODE SCHOTTKY 20A D2PAK

Vishay General Semiconductor - Diodes Division
3,730 -

RFQ

VS-20TQ040SPBF

Scheda tecnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Surface Mount 1400pF @ 5V, 1MHz - 2.7 mA @ 40 V 40 V 20A -55°C ~ 150°C 570 mV @ 20 A
VS-20TQ045-N3

VS-20TQ045-N3

DIODE SCHOTTKY 20A TO-220

Vishay General Semiconductor - Diodes Division
2,528 -

RFQ

VS-20TQ045-N3

Scheda tecnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Through Hole 1400pF @ 5V, 1MHz - 2.7 mA @ 45 V 45 V 20A -55°C ~ 150°C 570 mV @ 20 A
VS-HFA30PB120PBF

VS-HFA30PB120PBF

DIODE GEN PURP 1.2KV 30A TO247AC

Vishay General Semiconductor - Diodes Division
3,012 -

RFQ

VS-HFA30PB120PBF

Scheda tecnica

Bulk HEXFRED® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 170 ns 40 µA @ 1200 V 1200 V 30A -55°C ~ 150°C 4.1 V @ 30 A
VS-20TT100

VS-20TT100

DIODE SCHOTTKY 20A TO-220

Vishay General Semiconductor - Diodes Division
2,454 -

RFQ

VS-20TT100

Scheda tecnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Through Hole 850pF @ 5V, 1MHz - 150 µA @ 100 V 100 V 20A -55°C ~ 175°C 800 mV @ 20 A
RGP10AHE3/73

RGP10AHE3/73

DIODE GEN PURP 50V 1A DO204AL

Vishay General Semiconductor - Diodes Division
3,756 -

RFQ

RGP10AHE3/73

Scheda tecnica

Tape & Box (TB) SUPERECTIFIER® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole 15pF @ 4V, 1MHz 150 ns 5 µA @ 50 V 50 V 1A -65°C ~ 175°C 1.3 V @ 1 A
BYD13MGP-E3/54

BYD13MGP-E3/54

DIODE GEN PURP 1KV 1A DO204AL

Vishay General Semiconductor - Diodes Division
3,068 -

RFQ

BYD13MGP-E3/54

Scheda tecnica

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole 8pF @ 4V, 1MHz 3 µs 5 µA @ 200 V 1000 V 1A -65°C ~ 175°C 1.1 V @ 1 A
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