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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VS-ETH3006FP-M3DIODE GEN PURP 600V 30A TO220FP Vishay General Semiconductor - Diodes Division |
767 | - |
RFQ |
Scheda tecnica |
Bulk | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 26 ns | 30 µA @ 600 V | 600 V | 30A | -65°C ~ 175°C | 2.65 V @ 30 A |
|
VS-ETU3006-M3DIODE GEN PURP 600V 30A TO220-2 Vishay General Semiconductor - Diodes Division |
2,475 | - |
RFQ |
Scheda tecnica |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 45 ns | 30 µA @ 600 V | 600 V | 30A | -65°C ~ 175°C | 2 V @ 30 A |
|
MSQ1PGHM3/H1A, 400V, MICROSMP, ESD PROTECTI Vishay General Semiconductor - Diodes Division |
4,400 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 650 ns | 1 µA @ 400 V | 400 V | 1A | -55°C ~ 175°C | 1.2 V @ 1 A |
|
VS-E5TH3006-M330A, 600V, "H" SERIES FRED PT IN Vishay General Semiconductor - Diodes Division |
182 | - |
RFQ |
Scheda tecnica |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 46 ns | 20 µA @ 600 V | 600 V | 30A | -55°C ~ 175°C | 1.6 V @ 30 A |
|
BY229X-600-E3/45DIODE GEN PURP 600V 8A ITO220AC Vishay General Semiconductor - Diodes Division |
2,942 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 145 ns | 10 µA @ 600 V | 600 V | 8A | -40°C ~ 150°C | 1.85 V @ 20 A | |
|
AS3PMHM3/86ADIODE AVALANCHE 1KV 2.1A TO277 Vishay General Semiconductor - Diodes Division |
2,019 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Discontinued at Digi-Key | Surface Mount | 37pF @ 4V, 1MHz | 1.2 µs | 10 µA @ 1000 V | 1000 V | 2.1A (DC) | -55°C ~ 175°C | 920 mV @ 1.5 A |
|
VS-MBR1100TRDIODE SCHOTTKY 100V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,261 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | 35pF @ 5V, 1MHz | - | 500 µA @ 100 V | 100 V | 1A | -40°C ~ 150°C | 850 mV @ 1 A | |
|
|
BY229X-600HE3/45DIODE GEN PURP 600V 8A ITO220AC Vishay General Semiconductor - Diodes Division |
3,651 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 145 ns | 10 µA @ 600 V | 600 V | 8A | -40°C ~ 150°C | 1.85 V @ 20 A | |
|
|
AS3PMHM3/87ADIODE AVALANCHE 1KV 2.1A TO277 Vishay General Semiconductor - Diodes Division |
2,396 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Discontinued at Digi-Key | Surface Mount | 37pF @ 4V, 1MHz | 1.2 µs | 10 µA @ 1000 V | 1000 V | 2.1A (DC) | -55°C ~ 175°C | 920 mV @ 1.5 A |
|
VS-MBRS1100TRPBFDIODE SCHOTTKY 100V 1A SMB Vishay General Semiconductor - Diodes Division |
2,590 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 500 µA @ 100 V | 100 V | 1A | -55°C ~ 175°C | 780 mV @ 1 A | |
|
|
BY229X-800-E3/45DIODE GEN PURP 800V 8A ITO220AC Vishay General Semiconductor - Diodes Division |
2,971 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 145 ns | 10 µA @ 800 V | 800 V | 8A | -40°C ~ 150°C | 1.85 V @ 20 A | |
|
|
AS4PDHM3/86ADIODE AVALANCHE 200V 2.4A TO277A Vishay General Semiconductor - Diodes Division |
2,508 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Discontinued at Digi-Key | Surface Mount | 60pF @ 4V, 1MHz | 1.8 µs | 10 µA @ 200 V | 200 V | 2.4A (DC) | -55°C ~ 175°C | 962 mV @ 2 A |
|
|
VS-MBRS130LTRPBFDIODE SCHOTTKY 30V 1A SMB Vishay General Semiconductor - Diodes Division |
2,924 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 1 mA @ 30 V | 30 V | 1A | -55°C ~ 125°C | 420 mV @ 1 A | |
|
|
BY229X-800HE3/45DIODE GEN PURP 800V 8A ITO220AC Vishay General Semiconductor - Diodes Division |
2,752 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 145 ns | 10 µA @ 800 V | 800 V | 8A | -40°C ~ 150°C | 1.85 V @ 20 A | |
|
|
AS4PDHM3/87ADIODE AVALANCHE 200V 2.4A TO277A Vishay General Semiconductor - Diodes Division |
2,673 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Discontinued at Digi-Key | Surface Mount | 60pF @ 4V, 1MHz | 1.8 µs | 10 µA @ 200 V | 200 V | 2.4A (DC) | -55°C ~ 175°C | 962 mV @ 2 A |
|
|
VS-MBRS130TRPBFDIODE SCHOTTKY 30V 1A SMB Vishay General Semiconductor - Diodes Division |
2,920 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 1 mA @ 30 V | 30 V | 1A | -55°C ~ 125°C | 420 mV @ 1 A | |
|
|
BYS459-1500-E3/45DIODE GEN PURP 1.5KV 6.5A TO220 Vishay General Semiconductor - Diodes Division |
2,512 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 350 ns | 250 µA @ 1500 V | 1500 V | 6.5A | -55°C ~ 150°C | 1.3 V @ 6.5 A | |
|
|
AS4PGHM3/86ADIODE AVALANCHE 400V 2.4A TO277A Vishay General Semiconductor - Diodes Division |
3,798 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Discontinued at Digi-Key | Surface Mount | 60pF @ 4V, 1MHz | 1.8 µs | 10 µA @ 400 V | 400 V | 2.4A (DC) | -55°C ~ 175°C | 962 mV @ 2 A |
|
VS-E5TH1506THN315A, 600V, "H" SERIES FRED PT IN Vishay General Semiconductor - Diodes Division |
1,000 | - |
RFQ |
Scheda tecnica |
Tube | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 38 ns | 10 µA @ 600 V | 600 V | 15A | -55°C ~ 175°C | 1.6 V @ 15 A |
|
|
VS-E5TX1506THN315A, 600V, "X" SERIES FRED PT IN Vishay General Semiconductor - Diodes Division |
1,000 | - |
RFQ |
Scheda tecnica |
Tube | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 33 ns | 10 µA @ 600 V | 600 V | 15A | -55°C ~ 175°C | 2.1 V @ 15 A |
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