Diodi-Raddrizzatori-Singoli

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
1N5622GP-E3/73

1N5622GP-E3/73

DIODE GEN PURP 1KV 1A DO204AC

Vishay General Semiconductor - Diodes Division
2,626 -

RFQ

1N5622GP-E3/73

Scheda tecnica

Tape & Box (TB) SUPERECTIFIER® RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole 15pF @ 12V, 1MHz 2 µs 500 nA @ 1000 V 1000 V 1A -65°C ~ 175°C 1.2 V @ 1 A
AU2PKHM3/87A

AU2PKHM3/87A

DIODE AVALANCHE 800V 1.3A TO277A

Vishay General Semiconductor - Diodes Division
2,788 -

RFQ

AU2PKHM3/87A

Scheda tecnica

Tape & Reel (TR) eSMP® RoHS Fast Recovery =< 500ns, > 200mA (Io) Avalanche Discontinued at Digi-Key Surface Mount 29pF @ 4V, 1MHz 75 ns 10 µA @ 800 V 800 V 1.3A (DC) -55°C ~ 175°C 2.5 V @ 2 A
DTV56F-E3/45

DTV56F-E3/45

DIODE GEN PURP 1.5KV 10A ITO220

Vishay General Semiconductor - Diodes Division
3,938 -

RFQ

DTV56F-E3/45

Scheda tecnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 135 ns 100 µA @ 1500 V 1500 V 10A -55°C ~ 150°C 1.8 V @ 6 A
VS-C04ET07T-M3

VS-C04ET07T-M3

DIODE SCHOTTKY 650V 4A TO220AC

Vishay General Semiconductor - Diodes Division
495 -

RFQ

VS-C04ET07T-M3

Scheda tecnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Silicon Carbide Schottky Active Through Hole 170pF @ 1V, 1MHz - 25 µA @ 650 V 650 V 4A (DC) -55°C ~ 175°C 1.7 V @ 4 A
UF5406-E3/73

UF5406-E3/73

DIODE GEN PURP 600V 3A DO201AD

Vishay General Semiconductor - Diodes Division
922 -

RFQ

UF5406-E3/73

Scheda tecnica

Cut Tape (CT),Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 36pF @ 4V, 1MHz 75 ns 10 µA @ 600 V 600 V 3A -55°C ~ 150°C 1.7 V @ 3 A
BA157-E3/73

BA157-E3/73

DIODE GEN PURP 400V 1A DO204AL

Vishay General Semiconductor - Diodes Division
2,107 -

RFQ

BA157-E3/73

Scheda tecnica

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 12pF @ 4V, 1MHz 150 ns 5 µA @ 400 V 400 V 1A -65°C ~ 125°C 1.3 V @ 1 A
AU2PMHM3/86A

AU2PMHM3/86A

DIODE AVALANCHE 1KV 1.3A TO277

Vishay General Semiconductor - Diodes Division
3,356 -

RFQ

AU2PMHM3/86A

Scheda tecnica

Tape & Reel (TR) eSMP® RoHS Fast Recovery =< 500ns, > 200mA (Io) Avalanche Discontinued at Digi-Key Surface Mount 29pF @ 4V, 1MHz 75 ns 10 µA @ 1000 V 1000 V 1.3A (DC) -55°C ~ 175°C 2.5 V @ 2 A
VS-6EVH06-M3/I

VS-6EVH06-M3/I

DIODE GEN PURPOSE 600V SLIMDPAK

Vishay General Semiconductor - Diodes Division
260 -

RFQ

VS-6EVH06-M3/I

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) eSMP® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 28 ns 5 µA @ 600 V 600 V 6A -55°C ~ 175°C 2.1 V @ 6 A
VS-6EVX06-M3/I

VS-6EVX06-M3/I

DIODE GEN PURPOSE 600V SLIMDPAK

Vishay General Semiconductor - Diodes Division
136 -

RFQ

VS-6EVX06-M3/I

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) eSMP® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 18 ns 5 µA @ 600 V 600 V 6A -55°C ~ 175°C 3.1 V @ 6 A
UF5408-E3/73

UF5408-E3/73

DIODE GEN PURP 1KV 3A DO201AD

Vishay General Semiconductor - Diodes Division
494 -

RFQ

UF5408-E3/73

Scheda tecnica

Cut Tape (CT),Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 36pF @ 4V, 1MHz 75 ns 10 µA @ 1000 V 1000 V 3A -55°C ~ 150°C 1.7 V @ 3 A
VS-E5TH3006THN3

VS-E5TH3006THN3

30A, 600V, "H" SERIES FRED PT IN

Vishay General Semiconductor - Diodes Division
1,000 -

RFQ

VS-E5TH3006THN3

Scheda tecnica

Tube Automotive, AEC-Q101, FRED Pt® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 46 ns 20 µA @ 600 V 600 V 30A -55°C ~ 175°C 1.6 V @ 30 A
SS10P6-M3/87A

SS10P6-M3/87A

DIODE SCHOTTKY 60V 7A TO277A

Vishay General Semiconductor - Diodes Division
3,180 -

RFQ

SS10P6-M3/87A

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) eSMP® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 150 µA @ 60 V 60 V 7A -55°C ~ 150°C 550 mV @ 7 A
S1FLB-GS08

S1FLB-GS08

DIODE GP 100V 700MA DO219AB

Vishay General Semiconductor - Diodes Division
377 -

RFQ

S1FLB-GS08

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 4pF @ 4V, 1MHz 1.8 µs 10 µA @ 100 V 100 V 700mA -55°C ~ 150°C 1.1 V @ 1 A
DTV56L-E3/45

DTV56L-E3/45

DIODE GEN PURP 1.5KV 10A TO220AC

Vishay General Semiconductor - Diodes Division
2,229 -

RFQ

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 135 ns 100 µA @ 1500 V 1500 V 10A -55°C ~ 150°C 1.8 V @ 6 A
BA157GP-E3/73

BA157GP-E3/73

DIODE GEN PURP 400V 1A DO204AL

Vishay General Semiconductor - Diodes Division
3,473 -

RFQ

BA157GP-E3/73

Scheda tecnica

Tape & Box (TB) SUPERECTIFIER® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 150 ns 5 µA @ 400 V 400 V 1A -65°C ~ 175°C 1.3 V @ 1 A
AU2PMHM3/87A

AU2PMHM3/87A

DIODE AVALANCHE 1KV 1.3A TO277

Vishay General Semiconductor - Diodes Division
2,897 -

RFQ

AU2PMHM3/87A

Scheda tecnica

Tape & Reel (TR) eSMP® RoHS Fast Recovery =< 500ns, > 200mA (Io) Avalanche Discontinued at Digi-Key Surface Mount 29pF @ 4V, 1MHz 75 ns 10 µA @ 1000 V 1000 V 1.3A (DC) -55°C ~ 175°C 2.5 V @ 2 A
FES16ATHE3/45

FES16ATHE3/45

DIODE GEN PURP 50V 16A TO220AC

Vishay General Semiconductor - Diodes Division
3,645 -

RFQ

FES16ATHE3/45

Scheda tecnica

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 35 ns 10 µA @ 50 V 50 V 16A -65°C ~ 150°C 975 mV @ 16 A
BA157GPHE3/73

BA157GPHE3/73

DIODE GEN PURP 400V 1A DO204AL

Vishay General Semiconductor - Diodes Division
3,803 -

RFQ

BA157GPHE3/73

Scheda tecnica

Tape & Box (TB) SUPERECTIFIER® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole 15pF @ 4V, 1MHz 150 ns 5 µA @ 400 V 400 V 1A -65°C ~ 175°C 1.3 V @ 1 A
AU3PDHM3/86A

AU3PDHM3/86A

DIODE AVALANCHE 200V 1.7A TO277A

Vishay General Semiconductor - Diodes Division
3,495 -

RFQ

AU3PDHM3/86A

Scheda tecnica

Tape & Reel (TR) eSMP® RoHS Fast Recovery =< 500ns, > 200mA (Io) Avalanche Discontinued at Digi-Key Surface Mount 72pF @ 4V, 1MHz 75 ns 10 µA @ 200 V 200 V 1.7A (DC) -55°C ~ 175°C 1.9 V @ 3 A
FES16BTHE3/45

FES16BTHE3/45

DIODE GEN PURP 100V 16A TO220AC

Vishay General Semiconductor - Diodes Division
3,843 -

RFQ

FES16BTHE3/45

Scheda tecnica

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 35 ns 10 µA @ 100 V 100 V 16A -65°C ~ 150°C 975 mV @ 16 A
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