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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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RGP10GE-M3/54DIODE GEN PURP 400V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,990 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
VS-80APS16PBFDIODE GEN PURP 1.6KV 80A TO247AC Vishay General Semiconductor - Diodes Division |
2,174 | - |
RFQ |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | - | 100 µA @ 1600 V | 1600 V | 80A | -40°C ~ 150°C | 1.17 V @ 80 A | ||
|
NSB8DTHE3/45DIODE GEN PURP 200V 8A TO263AB Vishay General Semiconductor - Diodes Division |
3,900 | - |
RFQ |
Scheda tecnica |
Tube | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 55pF @ 4V, 1MHz | - | 10 µA @ 200 V | 200 V | 8A | -55°C ~ 150°C | 1.1 V @ 8 A |
|
|
RGP10GHM3/54DIODE GEN PURP 400V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,582 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101, Superectifier® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
VS-8ETH03-1PBFDIODE GEN PURP 300V 8A TO262AA Vishay General Semiconductor - Diodes Division |
2,812 | - |
RFQ |
Scheda tecnica |
Tube | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | - | 27 ns | 20 µA @ 300 V | 300 V | 8A | -65°C ~ 175°C | 1.25 V @ 8 A |
|
|
NSB8GTHE3/45DIODE GEN PURP 400V 8A TO263AB Vishay General Semiconductor - Diodes Division |
3,314 | - |
RFQ |
Scheda tecnica |
Tube | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 55pF @ 4V, 1MHz | - | 10 µA @ 400 V | 400 V | 8A | -55°C ~ 150°C | 1.1 V @ 8 A |
|
BAS170WS-E3-08DIODE SCHOTTKY 70V 70MA SOD323 Vishay General Semiconductor - Diodes Division |
2,805 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 2pF @ 0V, 1MHz | - | 10 µA @ 70 V | 70 V | 70mA | -55°C ~ 125°C | 1 V @ 15 mA | |
|
SE30AFD-M3/6ADIODE GEN PURP 200V 1.4A DO221AC Vishay General Semiconductor - Diodes Division |
588 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 19pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 200 V | 200 V | 1.4A (DC) | -55°C ~ 175°C | 1.1 V @ 3 A |
|
VS-8ETH06-N3DIODE GEN PURP 600V 8A TO220AC Vishay General Semiconductor - Diodes Division |
2,021 | - |
RFQ |
Scheda tecnica |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 25 ns | 50 µA @ 600 V | 600 V | 8A | -65°C ~ 175°C | 2.4 V @ 8 A |
|
|
RGP10G-M3/54DIODE GEN PURP 400V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,379 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
|
NSB8JTHE3/45DIODE GEN PURP 600V 8A TO263AB Vishay General Semiconductor - Diodes Division |
3,833 | - |
RFQ |
Scheda tecnica |
Tube | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 55pF @ 4V, 1MHz | - | 10 µA @ 600 V | 600 V | 8A | -55°C ~ 150°C | 1.1 V @ 8 A |
|
|
VS-8ETU04-1PBFDIODE GEN PURP 400V 8A TO262AA Vishay General Semiconductor - Diodes Division |
3,778 | - |
RFQ |
Scheda tecnica |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | - | 43 ns | 10 µA @ 400 V | 400 V | 8A | -65°C ~ 175°C | 1.3 V @ 80 A |
|
|
RGP10JE-M3/54DIODE GEN PURP 600V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,459 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | 250 ns | 5 µA @ 600 V | 600 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
|
NSB8KTHE3/45DIODE GEN PURP 800V 8A TO263AB Vishay General Semiconductor - Diodes Division |
3,962 | - |
RFQ |
Scheda tecnica |
Tube | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 55pF @ 4V, 1MHz | - | 10 µA @ 800 V | 800 V | 8A | -55°C ~ 150°C | 1.1 V @ 8 A |
|
|
VS-8ETX06-N3DIODE GEN PURP 600V 8A TO220AC Vishay General Semiconductor - Diodes Division |
2,059 | - |
RFQ |
Scheda tecnica |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 17 ns | 50 µA @ 600 V | 600 V | 8A | -65°C ~ 175°C | 3 V @ 8 A |
|
S2G-E3/52TDIODE GEN PURP 400V 1.5A DO214AA Vishay General Semiconductor - Diodes Division |
585 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 16pF @ 4V, 1MHz | 2 µs | 1 µA @ 400 V | 400 V | 1.5A | -55°C ~ 150°C | 1.15 V @ 1.5 A | |
|
MCL4148-TR3DIODE GP 75V 150MA MICROMELF Vishay General Semiconductor - Diodes Division |
3,503 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 4pF @ 0V, 1MHz | 8 ns | 25 nA @ 20 V | 75 V | 150mA | 175°C (Max) | 1 V @ 50 mA |
|
1N5624-TRDIODE AVALANCHE 200V 3A SOD64 Vishay General Semiconductor - Diodes Division |
2,093 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Through Hole | 60pF @ 4V, 1MHz | 7.5 µs | 1 µA @ 200 V | 200 V | 3A | -55°C ~ 175°C | 1 V @ 3 A | |
|
BAV103-GS18DIODE GEN PURP 200V 250MA SOD80 Vishay General Semiconductor - Diodes Division |
3,305 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 1.5pF @ 0V, 1MHz | 50 ns | 100 nA @ 200 V | 200 V | 250mA (DC) | 175°C (Max) | 1 V @ 100 mA |
|
BAT46W-G3-08DIODE SCHOTTKY 100V 150MA SOD123 Vishay General Semiconductor - Diodes Division |
2,247 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 6pF @ 1V, 1MHz | - | 5 µA @ 75 V | 100 V | 150mA (DC) | 125°C (Max) | 1 V @ 250 mA |
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