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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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V10P10HM3/86ADIODE SCHOTTKY 100V 10A TO277A Vishay General Semiconductor - Diodes Division |
2,182 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 150 µA @ 100 V | 100 V | 10A | -40°C ~ 150°C | 680 mV @ 10 A |
|
VS-8EWS16SPBFDIODE GEN PURP 1.6KV 8A TO252 Vishay General Semiconductor - Diodes Division |
2,036 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | - | 50 µA @ 1600 V | 1600 V | 8A | -40°C ~ 150°C | 1.1 V @ 8 A | |
|
SBYV26CHM3/54DIODE GEN PURP 600V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,566 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 45pF @ 4V, 1MHz | 30 ns | 5 µA @ 600 V | 600 V | 1A | -65°C ~ 175°C | 2.5 V @ 1 A |
|
NSF8JTHE3/45DIODE GEN PURP 600V 8A ITO220AC Vishay General Semiconductor - Diodes Division |
2,725 | - |
RFQ |
Scheda tecnica |
Tube | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | - | - | 10 µA @ 600 V | 600 V | 8A | -55°C ~ 150°C | 1.1 V @ 8 A |
|
|
SS5P6HM3J_A/HDIODE SCHOTTKY 60V 5A TO277A Vishay General Semiconductor - Diodes Division |
3,496 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 200pF @ 4V, 1MHz | - | 150 µA @ 60 V | 60 V | 5A | -55°C ~ 150°C | 690 mV @ 5 A |
|
VS-8TQ080GPBFDIODE SCHOTTKY 100V 8A TO220AC Vishay General Semiconductor - Diodes Division |
3,116 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | 500pF @ 5V, 1MHz | - | 280 µA @ 100 V | 100 V | 8A | -55°C ~ 175°C | 720 mV @ 8 A | |
|
|
SBYV26C-M3/54DIODE GEN PURP 600V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,092 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 45pF @ 4V, 1MHz | 30 ns | 5 µA @ 600 V | 600 V | 1A | -65°C ~ 175°C | 2.5 V @ 1 A | |
|
|
NSF8KT-E3/45DIODE GEN PURP 800V 8A ITO220AC Vishay General Semiconductor - Diodes Division |
2,112 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | - | 10 µA @ 800 V | 800 V | 8A | -55°C ~ 150°C | 1.1 V @ 8 A | |
|
UH2BHE3_A/HDIODE GEN PURP 100V 2A DO214AA Vishay General Semiconductor - Diodes Division |
2,604 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 42pF @ 4V, 1MHz | 25 ns | 2 µA @ 100 V | 100 V | 2A | -55°C ~ 175°C | 1.05 V @ 2 A |
|
VS-8TQ080GSPBFDIODE SCHOTTKY 80V 8A D2PAK Vishay General Semiconductor - Diodes Division |
2,745 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | 500pF @ 5V, 1MHz | - | - | 80 V | 8A | -65°C ~ 180°C | 720 mV @ 8 A | |
|
|
SE40PBHM3/87ADIODE GEN PURP 100V 2.4A TO277A Vishay General Semiconductor - Diodes Division |
3,910 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 28pF @ 4V, 1MHz | 2.2 µs | 10 µA @ 100 V | 100 V | 2.4A (DC) | -55°C ~ 175°C | 1.05 V @ 4 A |
|
ES1DHE3_A/IDIODE GEN PURP 200V 1A DO214AC Vishay General Semiconductor - Diodes Division |
3,377 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 25 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 920 mV @ 1 A |
|
SS1FH6-M3/HDIODE SCHOTTKY 60V 1A DO219AB Vishay General Semiconductor - Diodes Division |
236 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 90pF @ 4V, 1MHz | - | 3 µA @ 60 V | 60 V | 1A | -55°C ~ 175°C | 700 mV @ 1 A |
|
LS4448GS08DIODE GEN PURP 100V 300MA SOD80 Vishay General Semiconductor - Diodes Division |
3,605 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 4pF @ 0V, 1MHz | 8 ns | 25 nA @ 20 V | 75 V | 150mA | 175°C (Max) | 1 V @ 100 mA |
|
|
BYG23M-E3/TRDIODE AVALANCHE 1KV 1.5A Vishay General Semiconductor - Diodes Division |
510 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 75 ns | 5 µA @ 1000 V | 1000 V | 1.5A | -55°C ~ 150°C | 1.7 V @ 1 A | |
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|
AR1PD-M3/84ADIODE AVALANCHE 200V 1A DO220AA Vishay General Semiconductor - Diodes Division |
212 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 12.5pF @ 4V, 1MHz | 140 ns | 1 µA @ 200 V | 200 V | 1A | -55°C ~ 175°C | 1.25 V @ 1 A |
|
|
ES1A-E3/61TDIODE GEN PURP 50V 1A DO214AC Vishay General Semiconductor - Diodes Division |
2,241 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 25 ns | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 920 mV @ 1 A | |
|
|
NSF8KTHE3/45DIODE GEN PURP 800V 8A ITO220AC Vishay General Semiconductor - Diodes Division |
3,318 | - |
RFQ |
Scheda tecnica |
Tube | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | - | - | 10 µA @ 800 V | 800 V | 8A | -55°C ~ 150°C | 1.1 V @ 8 A |
|
|
UH2BHE3_A/IDIODE GEN PURP 100V 2A DO214AA Vishay General Semiconductor - Diodes Division |
3,134 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 42pF @ 4V, 1MHz | 25 ns | 2 µA @ 100 V | 100 V | 2A | -55°C ~ 175°C | 1.05 V @ 2 A |
|
|
VS-8TQ080-N3DIODE SCHOTTKY 80V 8A TO220AC Vishay General Semiconductor - Diodes Division |
2,643 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | - | 80 V | 8A | -65°C ~ 180°C | 720 mV @ 8 A |
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