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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SE70PGHM3/87ADIODE GEN PURP 400V 2.9A TO277A Vishay General Semiconductor - Diodes Division |
2,440 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 76pF @ 4V, 1MHz | 2.6 µs | 20 µA @ 100 V | 400 V | 2.9A (DC) | -55°C ~ 175°C | 1.05 V @ 7 A |
|
SBL1040HE3/45DIODE SCHOTTKY 40V 10A TO220AC Vishay General Semiconductor - Diodes Division |
2,528 | - |
RFQ |
Scheda tecnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 1 mA @ 40 V | 40 V | 10A | -40°C ~ 125°C | 600 mV @ 10 A |
|
VS-EPU3006-F3DIODE GEN PURP 600V 30A TO247AC Vishay General Semiconductor - Diodes Division |
2,662 | - |
RFQ |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 45 ns | 30 µA @ 600 V | 600 V | 30A | -65°C ~ 175°C | 2 V @ 30 A | |
|
|
SE70PJHM3/87ADIODE GEN PURP 600V 2.9A TO277A Vishay General Semiconductor - Diodes Division |
3,872 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 76pF @ 4V, 1MHz | 2.6 µs | 20 µA @ 100 V | 600 V | 2.9A (DC) | -55°C ~ 175°C | 1.05 V @ 7 A |
|
|
SBL10L25HE3/45DIODE SCHOTTKY 25V 10A TO220AC Vishay General Semiconductor - Diodes Division |
3,377 | - |
RFQ |
Scheda tecnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 800 µA @ 25 V | 25 V | 10A | -65°C ~ 150°C | 460 mV @ 10 A |
|
VS-HFA06TB120-N3DIODE GEN PURP 1.2KV 6A TO220AC Vishay General Semiconductor - Diodes Division |
3,239 | - |
RFQ |
Scheda tecnica |
Tube | HEXFRED® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 80 ns | 5 µA @ 1200 V | 1200 V | 6A | -55°C ~ 150°C | 3 V @ 6 A |
|
SS19-M3/5ATDIODE SCHOTTKY 1A 90V DO-214AC Vishay General Semiconductor - Diodes Division |
3,570 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | - | 90 V | 1A | - | - | ||
|
|
SBL10L30-E3/45DIODE SCHOTTKY 30V 10A TO220AC Vishay General Semiconductor - Diodes Division |
2,131 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 1 mA @ 30 V | 30 V | 10A | -65°C ~ 150°C | 520 mV @ 10 A | |
|
|
VS-HFA08TB120-N3DIODE GEN PURP 1.2KV 8A TO220AC Vishay General Semiconductor - Diodes Division |
2,335 | - |
RFQ |
Scheda tecnica |
Tube | HEXFRED® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 95 ns | 10 µA @ 1200 V | 1200 V | 8A | -55°C ~ 150°C | 3.3 V @ 8 A |
|
|
SS24SHE3_A/IDIODE SCHOTTKY 2A 40V DO-214AC Vishay General Semiconductor - Diodes Division |
3,059 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | 130pF @ 4V, 1MHz | - | 200 µA @ 40 V | 40 V | 2A | -55°C ~ 150°C | 550 mV @ 2 A |
|
|
SBL10L30HE3/45DIODE SCHOTTKY 30V 10A TO220AC Vishay General Semiconductor - Diodes Division |
2,287 | - |
RFQ |
Scheda tecnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 1 mA @ 30 V | 30 V | 10A | -65°C ~ 150°C | 520 mV @ 10 A |
|
|
VS-HFA08TB60-N3DIODE GEN PURP 600V 8A TO220AC Vishay General Semiconductor - Diodes Division |
3,743 | - |
RFQ |
Scheda tecnica |
Tube | HEXFRED® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 55 ns | 5 µA @ 600 V | 600 V | 8A | -55°C ~ 150°C | 1.7 V @ 8 A |
|
|
SS5P10HM3/87ADIODE SCHOTTKY 5A 100V TO-277A Vishay General Semiconductor - Diodes Division |
2,481 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 15 µA @ 100 V | 100 V | 5A | -55°C ~ 150°C | 880 mV @ 5 A |
|
GPP100MS-E3/54DIODE GEN PURP 1KV 10A P600 Vishay General Semiconductor - Diodes Division |
3,175 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 110pF @ 4V, 1MHz | 5.5 µs | 5 µA @ 1000 V | 1000 V | 10A | -55°C ~ 175°C | 1.05 V @ 10 A | |
|
|
SBL8L40-E3/45DIODE SCHOTTKY 40V 8A TO220AC Vishay General Semiconductor - Diodes Division |
2,642 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 1 mA @ 40 V | 40 V | 8A | -65°C ~ 125°C | 500 mV @ 8 A | |
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|
V2P6L-M3/HSCHOTTKY RECTIFIER 2A 60V SMP Vishay General Semiconductor - Diodes Division |
922 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 255pF @ 4V, 1MHz | - | 480 µA @ 60 V | 60 V | 2A (DC) | -40°C ~ 150°C | 600 mV @ 2 A |
|
|
V2PL45L-M3/HSCHOTTKY RECTIFIER 2A 45V SMP Vishay General Semiconductor - Diodes Division |
854 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 390pF @ 4V, 1MHz | - | 300 µA @ 45 V | 45 V | 2A (DC) | -40°C ~ 150°C | 530 mV @ 2 A |
|
S5G-E3/57TDIODE GEN PURP 400V 5A DO214AB Vishay General Semiconductor - Diodes Division |
274 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 40pF @ 4V, 1MHz | 2.5 µs | 10 µA @ 400 V | 400 V | 5A | -55°C ~ 150°C | 1.15 V @ 5 A | |
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|
VSS8D3M12-M3/I3A, 120V, SLIMSMAW TRENCH SKY Vishay General Semiconductor - Diodes Division |
365 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 310pF @ 4V, 1MHz | - | 300 µA @ 120 V | 120 V | 2A | -40°C ~ 175°C | 610 mV @ 1.5 A |
|
V3F6-M3/H3A,60V,SMF,TRENCH SKY RECT. Vishay General Semiconductor - Diodes Division |
3,707 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 310pF @ 4V, 1MHz | - | 600 µA @ 60 V | 60 V | 3A | -40°C ~ 150°C | 620 mV @ 3 A |
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