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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VS-301URA80DIODE GEN PURP 800V 330A DO205AB Vishay General Semiconductor - Diodes Division |
2,260 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Stud Mount | - | - | - | 800 V | 330A | -40°C ~ 180°C | 1.46 V @ 942 A | |
|
VS-30BQ100GPBFDIODE SCHOTTKY 3.0A SMC Vishay General Semiconductor - Diodes Division |
2,886 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | 115pF @ 5V, 1MHz | - | 100 µA @ 100 V | 100 V | 3A | -55°C ~ 175°C | 790 mV @ 3 A | |
|
VS-31DQ09GDIODE SCHOTTKY 90V 3.3A C16 Vishay General Semiconductor - Diodes Division |
2,115 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | 110pF @ 5V, 1MHz | - | 100 µA @ 90 V | 90 V | 3.3A | -40°C ~ 150°C | 850 mV @ 3 A | |
|
VS-31DQ10GDIODE SCHOTTKY 100V 3.3A C16 Vishay General Semiconductor - Diodes Division |
2,441 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | 110pF @ 5V, 1MHz | - | 100 µA @ 100 V | 100 V | 3.3A | -40°C ~ 150°C | 850 mV @ 3 A | |
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V8PA12-M3/IDIODE SCHOTTKY 120V 8A DO221BC Vishay General Semiconductor - Diodes Division |
3,715 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 700pF @ 4V, 1MHz | - | 600 µA @ 120 V | 120 V | 8A | -40°C ~ 150°C | 870 mV @ 8 A |
|
|
VS-MBRS360-M3/9ATDIODE SCHOTTKY 60V 3A DO214AB Vishay General Semiconductor - Diodes Division |
3,101 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 180pF @ 5V, 1MHz | - | 500 µA @ 60 V | 60 V | 3A | -55°C ~ 150°C | 740 mV @ 3 A | |
|
VS-HFA08TB60-M3DIODE FRED 600V 8A TO220AC Vishay General Semiconductor - Diodes Division |
2,378 | - |
RFQ |
Scheda tecnica |
Tube | HEXFRED® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 55 ns | 5 µA @ 600 V | 600 V | 8A | -55°C ~ 150°C | 2.1 V @ 16 A |
|
BYM07-200-E3/83DIODE GEN PURP 200V 500MA DO213 Vishay General Semiconductor - Diodes Division |
2,585 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 7pF @ 4V, 1MHz | 50 ns | 5 µA @ 200 V | 200 V | 500mA | -65°C ~ 175°C | 1.25 V @ 500 mA |
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VS-C4PH6006L-N3DIODE GEN PURP 600V 30A TO247AD Vishay General Semiconductor - Diodes Division |
3,202 | - |
RFQ |
Scheda tecnica |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 55 ns | 50 µA @ 600 V | 600 V | 30A | -55°C ~ 175°C | 2 V @ 30 A |
|
VSSAF56-M3/6ADIODE SCHOTTKY 60V 5A DO221AC Vishay General Semiconductor - Diodes Division |
3,569 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | TMBS®, SlimSMA™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 540pF @ 4V, 1MHz | - | 400 µA @ 60 V | 60 V | 5A (DC) | -40°C ~ 150°C | 620 mV @ 5 A |
|
VS-HFA08TB60S-M3DIODE GEN PURP 600V 8A D2PAK Vishay General Semiconductor - Diodes Division |
3,939 | - |
RFQ |
Scheda tecnica |
Tube | HEXFRED® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 55 ns | 5 µA @ 600 V | 600 V | 8A (DC) | -55°C ~ 150°C | 2.1 V @ 16 A |
|
RGL41G-E3/96DIODE GEN PURP 400V 1A DO213AB Vishay General Semiconductor - Diodes Division |
2,990 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
|
FESB16HT-E3/81DIODE GEN PURP 500V 16A TO263AB Vishay General Semiconductor - Diodes Division |
2,263 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 145pF @ 4V, 1MHz | 50 ns | 10 µA @ 500 V | 500 V | 16A | -65°C ~ 150°C | 1.5 V @ 16 A | |
|
BYG10YHE3_A/I1.5A,1600V,STD,AVALANCHE,SMD Vishay General Semiconductor - Diodes Division |
3,111 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 4 µs | 1 µA @ 1600 V | 1600 V | 1.5A (DC) | -55°C ~ 150°C | 1.15 V @ 1.5 A |
|
VS-8EWH02FN-M3DIODE GEN PURP 200V 8A TO252 Vishay General Semiconductor - Diodes Division |
3,282 | - |
RFQ |
Scheda tecnica |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 24 ns | 5 µA @ 200 V | 200 V | 8A | -65°C ~ 175°C | 970 mV @ 8 A |
|
GL41BHE3/96DIODE GEN PURP 100V 1A DO213AB Vishay General Semiconductor - Diodes Division |
3,963 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | - | 10 µA @ 100 V | 100 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
|
MBR1645-E3/45DIODE SCHOTTKY 45V 16A TO220AC Vishay General Semiconductor - Diodes Division |
2,841 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 200 µA @ 45 V | 45 V | 16A | -65°C ~ 150°C | 630 mV @ 16 A | |
|
VS-50SQ060GDIODE SCHOTTKY 60V 5A AXIAL Vishay General Semiconductor - Diodes Division |
2,169 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | 500pF @ 5V, 1MHz | - | 150 µA @ 60 V | 60 V | 5A | -55°C ~ 175°C | 660 mV @ 5 A | |
|
|
VS-50SQ080GDIODE SCHOTTKY 80V 5A AXIAL Vishay General Semiconductor - Diodes Division |
3,970 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | 500pF @ 5V, 1MHz | - | 150 µA @ 60 V | 80 V | 5A | -55°C ~ 175°C | 660 mV @ 5 A | |
|
|
VS-50SQ100GDIODE SCHOTTKY 100V 5A AXIAL Vishay General Semiconductor - Diodes Division |
2,879 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | 500pF @ 5V, 1MHz | - | 150 µA @ 60 V | 100 V | 5A | -55°C ~ 175°C | 660 mV @ 5 A |
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