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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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S1PJ-M3/84ADIODE GEN PURP 600V 1A DO220AA Vishay General Semiconductor - Diodes Division |
3,181 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 6pF @ 4V, 1MHz | 1.8 µs | 1 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A |
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US1K-E3/5ATDIODE GEN PURP 800V 1A DO214AC Vishay General Semiconductor - Diodes Division |
2,721 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 75 ns | 10 µA @ 800 V | 800 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
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S1PK-M3/84ADIODE GEN PURP 800V 1A DO220AA Vishay General Semiconductor - Diodes Division |
3,853 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 6pF @ 4V, 1MHz | 1.8 µs | 1 µA @ 800 V | 800 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A |
|
MSS1P3LHM3_A/HDIODE SCHOTTKY 30V 1A MICROSMP Vishay General Semiconductor - Diodes Division |
2,187 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 65pF @ 4V, 1MHz | - | 250 µA @ 30 V | 30 V | 1A | -55°C ~ 150°C | 500 mV @ 1 A |
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MSS2P2HM3_A/HDIODE SCHOTTKY 20V 2A MICROSMP Vishay General Semiconductor - Diodes Division |
3,801 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 65pF @ 4V, 1MHz | - | 250 µA @ 20 V | 20 V | 2A | -55°C ~ 150°C | 600 mV @ 2 A |
|
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SE10PB-M3/84ADIODE GEN PURP 100V 1A DO220AA Vishay General Semiconductor - Diodes Division |
2,132 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 780 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 175°C | 1.05 V @ 1 A |
|
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US1J-M3/61TDIODE GEN PURP 600V 1A DO214AC Vishay General Semiconductor - Diodes Division |
2,923 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 75 ns | 10 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
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MSS1P3HM3_A/HDIODE SCHOTTKY 30V 1A MICROSMP Vishay General Semiconductor - Diodes Division |
2,953 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 50pF @ 4V, 1MHz | - | 200 µA @ 30 V | 30 V | 1A | -55°C ~ 150°C | 550 mV @ 1 A |
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LL46-GS18DIODE SCHOTTKY 100V 150MA SOD80 Vishay General Semiconductor - Diodes Division |
2,344 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 10pF @ 0V, 1MHz | - | 5 µA @ 75 V | 100 V | 150mA | 125°C (Max) | 1 V @ 250 mA |
|
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B160-E3/5ATDIODE SCHOTTKY 60V 1A DO214AC Vishay General Semiconductor - Diodes Division |
2,028 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 60 V | 60 V | 1A | -65°C ~ 150°C | 750 mV @ 1 A | |
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VS-10ETF12FP-M3DIODE GEN PURP 1.2KV 10A TO220FP Vishay General Semiconductor - Diodes Division |
2,576 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 310 ns | 100 µA @ 1000 V | 1200 V | 10A | -40°C ~ 150°C | 1.33 V @ 10 A | |
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BAS382-TRDIODE SCHOTTKY 50V 30MA MICROMLF Vishay General Semiconductor - Diodes Division |
2,251 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 1.6pF @ 1V, 1MHz | - | 200 nA @ 50 V | 50 V | 30mA | 125°C (Max) | 1 V @ 15 mA |
|
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SS14HE3_B/IDIODE SCHOTTKY 40V 1A DO214AC Vishay General Semiconductor - Diodes Division |
2,141 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 40 V | 40 V | 1A | -65°C ~ 150°C | - |
|
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SS13-E3/5ATDIODE SCHOTTKY 30V 1A DO214AC Vishay General Semiconductor - Diodes Division |
2,393 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 30 V | 30 V | 1A | -65°C ~ 125°C | 500 mV @ 1 A | |
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VSS8D2M6HM3/I2A, 60V, SLIMSMAW TRENCH SKY REC Vishay General Semiconductor - Diodes Division |
2,790 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 430pF @ 4V, 1MHz | - | 200 µA @ 60 V | 60 V | 2A | -40°C ~ 175°C | 480 mV @ 1 A |
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VSS8D5M12-M3/I5A, 120V, SLIMSMAW TRENCH SKY Vishay General Semiconductor - Diodes Division |
3,298 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 460pF @ 4V, 1MHz | - | 350 µA @ 120 V | 100 V | 2.2A | -40°C ~ 175°C | 620 mV @ 2.5 A |
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FES16BT-E3/45DIODE GEN PURP 100V 16A TO220AC Vishay General Semiconductor - Diodes Division |
3,440 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 35 ns | 10 µA @ 100 V | 100 V | 16A | -65°C ~ 150°C | 975 mV @ 16 A | |
|
VS-15EWH06FN-M3DIODE GEN PURP 600V 15A DPAK Vishay General Semiconductor - Diodes Division |
3,775 | - |
RFQ |
Scheda tecnica |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 36 ns | 50 µA @ 600 V | 600 V | 15A | -65°C ~ 175°C | 2.1 V @ 15 A |
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VS-EPU6006LHN3DIODE GEN PURP 600V 60A TO247AD Vishay General Semiconductor - Diodes Division |
3,275 | - |
RFQ |
Scheda tecnica |
Tube | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 110 ns | 30 µA @ 600 V | 600 V | 60A | -55°C ~ 175°C | 1.5 V @ 60 A |
|
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VS-15EWL06FN-M3DIODE GEN PURP 600V 15A DPAK Vishay General Semiconductor - Diodes Division |
3,216 | - |
RFQ |
Scheda tecnica |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 220 ns | 10 µA @ 600 V | 600 V | 15A | -65°C ~ 175°C | 1.05 V @ 15 A |
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