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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GSD2004WS-HE3-18DIODE GEN PURP 240V 225MA SOD323 Vishay General Semiconductor - Diodes Division |
2,162 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 5pF @ 0V, 1MHz | 50 ns | 100 nA @ 240 V | 240 V | 225mA (DC) | 150°C (Max) | 1 V @ 100 mA |
|
S1FLB-M-18DIODE GP 100V 700MA DO219AB Vishay General Semiconductor - Diodes Division |
3,488 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 1.8 µs | 10 µA @ 100 V | 100 V | 700mA | -55°C ~ 150°C | 1.1 V @ 1 A | |
|
VB20100S-E3/4WDIODE SCHOTTKY 100V 20A TO263AB Vishay General Semiconductor - Diodes Division |
3,558 | - |
RFQ |
Scheda tecnica |
Tube | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 100 V | 100 V | 20A | -40°C ~ 150°C | 900 mV @ 20 A |
|
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S1FLD-M-18DIODE GP 200V 700MA DO219AB Vishay General Semiconductor - Diodes Division |
3,196 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 1.8 µs | 10 µA @ 200 V | 200 V | 700mA | -55°C ~ 150°C | 1.1 V @ 1 A | |
|
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S1FLG-M-18DIODE GEN PURP 400V 1A DO219AB Vishay General Semiconductor - Diodes Division |
3,254 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 1.8 µs | 10 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
|
VF30100S-E3/4WDIODE SCHOTTKY 100V 30A ITO220AB Vishay General Semiconductor - Diodes Division |
3,757 | - |
RFQ |
Scheda tecnica |
Tube | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 1 mA @ 100 V | 100 V | 30A | -40°C ~ 150°C | 910 mV @ 30 A |
|
|
S1FLJ-M-18DIODE GEN PURP 600V 1A DO219AB Vishay General Semiconductor - Diodes Division |
2,689 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 1.8 µs | 10 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
|
|
VS-25ETS12SLHM3DIODES - D2PAK-E3 Vishay General Semiconductor - Diodes Division |
3,687 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 100 µA @ 1200 V | 1200 V | 25A | -40°C ~ 150°C | 1.14 V @ 25 A |
|
VS-12F10DIODE GEN PURP 100V 12A DO203AA Vishay General Semiconductor - Diodes Division |
3,622 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 12 mA @ 100 V | 100 V | 12A | -65°C ~ 175°C | 1.26 V @ 38 A | |
|
|
S1FLK-M-18DIODE GEN PURP 800V 1A DO219AB Vishay General Semiconductor - Diodes Division |
2,375 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 1.8 µs | 10 µA @ 800 V | 800 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
|
|
VS-20TQ045S-M3DIODE SCHOTTKY 45V 20A TO263AB Vishay General Semiconductor - Diodes Division |
2,471 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 1400pF @ 5V, 1MHz | - | 2.7 mA @ 45 V | 45 V | 20A | -55°C ~ 150°C | 570 mV @ 20 A | |
|
VS-E5PH6012L-N3DIODE FREDS 1200V 60A TO-247 Vishay General Semiconductor - Diodes Division |
2,757 | - |
RFQ |
Scheda tecnica |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 130 ns | 50 µA @ 1200 V | 1200 V | 60A | -55°C ~ 175°C | 2.3 V @ 60 A |
|
|
S1FLM-M-18DIODE GEN PURP 1KV 1A DO219AB Vishay General Semiconductor - Diodes Division |
3,585 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 1.8 µs | 10 µA @ 1000 V | 1000 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
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|
VSS8D5M12HM3/I5A, 120V, SLIMSMAW TRENCH SKY Vishay General Semiconductor - Diodes Division |
2,498 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 460pF @ 4V, 1MHz | - | 350 µA @ 120 V | 100 V | 2.2A | -40°C ~ 175°C | 620 mV @ 2.5 A |
|
VS-12F60DIODE GEN PURP 600V 12A DO203AA Vishay General Semiconductor - Diodes Division |
3,867 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 12 mA @ 600 V | 600 V | 12A | -65°C ~ 175°C | 1.26 V @ 38 A | |
|
BAS40-02V-G3-08DIODE SCHOTTKY 40V 120MA SOD523 Vishay General Semiconductor - Diodes Division |
2,335 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 4pF @ 0V, 1MHz | 5 ns | 100 nA @ 30 V | 40 V | 120mA (DC) | 125°C | 1 V @ 40 mA | |
|
VS-APH3006-N3DIODE SCHOTTKY 600V 30A TO247AC Vishay General Semiconductor - Diodes Division |
2,553 | - |
RFQ |
Scheda tecnica |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | 26 ns | 30 µA @ 600 V | 600 V | 30A | -55°C ~ 175°C | 2.65 V @ 30 A |
|
|
BAS70-02V-G3-08DIODE SCHOTTKY 70V 200MA SOD523 Vishay General Semiconductor - Diodes Division |
2,389 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 1.5pF @ 0V, 1MHz | 5 ns | 100 nA @ 50 V | 70 V | 200mA (DC) | 125°C | 1 V @ 15 mA | |
|
|
FESB16DT-E3/45DIODE GEN PURP 200V 16A TO263AB Vishay General Semiconductor - Diodes Division |
2,321 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 175pF @ 4V, 1MHz | 35 ns | 10 µA @ 200 V | 200 V | 16A | -65°C ~ 150°C | 975 mV @ 16 A | |
|
|
BAS581-02V-G3-08DIODE SCHOTTKY 40V 30MA SOD523 Vishay General Semiconductor - Diodes Division |
3,217 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 2pF @ 1V, 1MHz | - | 500 nA @ 30 V | 40 V | 30mA (DC) | 125°C | 370 mV @ 1 mA |
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