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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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S1FLD-M-08DIODE GP 200V 700MA DO219AB Vishay General Semiconductor - Diodes Division |
2,492 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 1.8 µs | 10 µA @ 200 V | 200 V | 700mA | -55°C ~ 150°C | 1.1 V @ 1 A | |
|
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S1FLD-GS18DIODE GP 200V 700MA DO219AB Vishay General Semiconductor - Diodes Division |
2,361 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 1.8 µs | 10 µA @ 200 V | 200 V | 700mA | -55°C ~ 150°C | 1.1 V @ 1 A | |
|
VS-HFA16TB120S-M3DIODE GEN PURP 1.2KV 16A D2PAK Vishay General Semiconductor - Diodes Division |
2,331 | - |
RFQ |
Scheda tecnica |
Tube | HEXFRED® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 135 ns | 20 µA @ 1200 V | 1200 V | 16A (DC) | -55°C ~ 150°C | 3.93 V @ 32 A |
|
|
S1FLG-M-08DIODE GP 400V 700MA DO219AB Vishay General Semiconductor - Diodes Division |
3,859 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 1.8 µs | 10 µA @ 400 V | 400 V | 700mA | -55°C ~ 150°C | 1.1 V @ 1 A | |
|
|
S1FLG-GS18DIODE GP 400V 700MA DO219AB Vishay General Semiconductor - Diodes Division |
3,583 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 1.8 µs | 10 µA @ 400 V | 400 V | 700mA | -55°C ~ 150°C | 1.1 V @ 1 A | |
|
|
S1FLJ-M-08DIODE GP 600V 700MA DO219AB Vishay General Semiconductor - Diodes Division |
3,730 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 1.8 µs | 10 µA @ 600 V | 600 V | 700mA | -55°C ~ 150°C | 1.1 V @ 1 A | |
|
|
S1FLJ-GS18DIODE GEN PURP 600V 1A DO219AB Vishay General Semiconductor - Diodes Division |
3,800 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 1.8 µs | 10 µA @ 600 V | 600 V | 700mA | -55°C ~ 150°C | 1.1 V @ 1 A | |
|
BAQ133-GS18DIODE GEN PURP 30V 200MA SOD80 Vishay General Semiconductor - Diodes Division |
3,076 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Last Time Buy | Surface Mount | 3pF @ 0V, 1MHz | - | 1 nA @ 15 V | 30 V | 200mA | -65°C ~ 175°C | 1 V @ 100 mA | |
|
|
S1FLG-GS08DIODE GP 400V 700MA DO219AB Vishay General Semiconductor - Diodes Division |
2,971 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 1.8 µs | 10 µA @ 400 V | 400 V | 700mA | -55°C ~ 150°C | 1.1 V @ 1 A | |
|
|
S1FLD-GS08DIODE GP 200V 700MA DO219AB Vishay General Semiconductor - Diodes Division |
3,909 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 1.8 µs | 10 µA @ 200 V | 200 V | 700mA | -55°C ~ 150°C | 1.1 V @ 1 A | |
|
BAS16L-HG3-08SWITCHING DIODE GENPURP DFN1006- Vishay General Semiconductor - Diodes Division |
3,209 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 0.36pF @ 0V, 1MHz | 4 ns | 1 µA @ 100 V | 100 V | 250mA (DC) | -55°C ~ 150°C | 1.25 V @ 150 mA |
|
BAS16D-G3-18DIODE GEN PURP 75V 250MA SOD123 Vishay General Semiconductor - Diodes Division |
3,875 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 2pF @ 0V, 1MHz | 6 ns | 1 µA @ 75 V | 75 V | 250mA | -55°C ~ 150°C | 1.25 V @ 150 mA | |
|
VS-E5PH3006LHN330A, 600V, "H" SERIES FRED PT IN Vishay General Semiconductor - Diodes Division |
3,749 | - |
RFQ |
Scheda tecnica |
Tube | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 46 ns | 20 µA @ 600 V | 600 V | 30A | -55°C ~ 175°C | 1.6 V @ 30 A |
|
|
BAS16D-G3-08DIODE GEN PURP 75V 250MA SOD123 Vishay General Semiconductor - Diodes Division |
3,863 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 2pF @ 0V, 1MHz | 6 ns | 1 µA @ 75 V | 75 V | 250mA | -55°C ~ 150°C | 1.25 V @ 150 mA | |
|
|
VS-E5PX3006LHN330A, 600V, "X" SERIES FRED PT IN Vishay General Semiconductor - Diodes Division |
2,244 | - |
RFQ |
Scheda tecnica |
Tube | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 41 ns | 20 µA @ 600 V | 600 V | 30A | -55°C ~ 175°C | 2.1 V @ 30 A |
|
VS-60APU06-N3DIODE GEN PURP 600V 60A TO247AC Vishay General Semiconductor - Diodes Division |
2,230 | - |
RFQ |
Scheda tecnica |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 81 ns | 50 µA @ 600 V | 600 V | 60A | -55°C ~ 175°C | 1.68 V @ 60 A |
|
IMBD4448-E3-08DIODE GEN PURP 75V 150MA SOT23 Vishay General Semiconductor - Diodes Division |
3,686 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | - | 4 ns | 2.5 µA @ 70 V | 75 V | 150mA | 150°C (Max) | 1 V @ 10 mA | |
|
BAT54-02V-G3-08DIODE SCHOTTKY 30V 200MA SOD523 Vishay General Semiconductor - Diodes Division |
2,375 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 10pF @ 1V, 1MHz | 5 ns | 2 µA @ 25 V | 30 V | 200mA (DC) | 125°C | 800 mV @ 100 mA | |
|
VS-EPU6006L-N3DIODE GEN PURP 600V 60A TO247AD Vishay General Semiconductor - Diodes Division |
2,007 | - |
RFQ |
Scheda tecnica |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 110 ns | 30 µA @ 600 V | 600 V | 60A | -55°C ~ 175°C | 1.5 V @ 60 A |
|
|
GSD2004W-G3-18DIODE GEN PURP 240V 225MA SOD123 Vishay General Semiconductor - Diodes Division |
3,599 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 5pF @ 0V, 1MHz | 50 ns | 100 nA @ 240 V | 240 V | 225mA (DC) | 150°C (Max) | 1 V @ 100 mA |
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