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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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RGP15K-E3/54DIODE GEN PURP 800V 1.5A DO204AC Vishay General Semiconductor - Diodes Division |
3,474 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 500 ns | 5 µA @ 800 V | 800 V | 1.5A | -65°C ~ 175°C | 1.3 V @ 1.5 A |
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SS2P2LHM3/85ADIODE SCHOTTKY 20V 2A DO220AA Vishay General Semiconductor - Diodes Division |
3,983 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 130pF @ 4V, 1MHz | - | 200 µA @ 20 V | 20 V | 2A | - | 500 mV @ 2 A |
|
ESH3C-M3/57TDIODE GEN PURP 150V 3A DO214AB Vishay General Semiconductor - Diodes Division |
3,515 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 70pF @ 4V, 1MHz | 40 ns | 5 µA @ 150 V | 150 V | 3A | -55°C ~ 175°C | 900 mV @ 3 A | |
|
|
1N5621GP-E3/54DIODE GEN PURP 800V 1A DO204AC Vishay General Semiconductor - Diodes Division |
3,401 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 25pF @ 4V, 1MHz | 300 ns | 500 nA @ 800 V | 800 V | 1A | -65°C ~ 175°C | 1.2 V @ 1 A |
|
V3P22HM3/ISCHOTTKY RECTIFIER 3A 200V SMP Vishay General Semiconductor - Diodes Division |
2,190 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 120pF @ 4V, 1MHz | - | - | 200 V | 1.7A | -40°C ~ 175°C | 780 mV @ 1.5 A |
|
|
ESH3D-M3/57TDIODE GEN PURP 200V 3A DO214AB Vishay General Semiconductor - Diodes Division |
3,170 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 70pF @ 4V, 1MHz | 40 ns | 5 µA @ 200 V | 200 V | 3A | -55°C ~ 175°C | 900 mV @ 3 A | |
|
GL41AHE3/96DIODE GEN PURP 50V 1A DO213AB Vishay General Semiconductor - Diodes Division |
2,330 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | - | 10 µA @ 50 V | 50 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
SS1FL3HM3/IDIODE SCHOTTKY 30V 1A DO-219AB Vishay General Semiconductor - Diodes Division |
2,098 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 130pF @ 4V, 1MHz | - | 200 µA @ 30 V | 30 V | 1A | -55°C ~ 150°C | 480 mV @ 1 A |
|
UF5400-E3/73DIODE GEN PURP 50V 3A DO201AD Vishay General Semiconductor - Diodes Division |
2,394 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 45pF @ 4V, 1MHz | 50 ns | 10 µA @ 50 V | 50 V | 3A | -55°C ~ 150°C | 1 V @ 3 A | |
|
|
GL41DHE3/96DIODE GEN PURP 200V 1A DO213AB Vishay General Semiconductor - Diodes Division |
3,674 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | - | 10 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
|
SS2FL3-M3/IDIODE SCHOTTKY 30V 2A DO-219AB Vishay General Semiconductor - Diodes Division |
2,325 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 145pF @ 4V, 1MHz | - | 200 µA @ 30 V | 30 V | 2A | -55°C ~ 150°C | 540 mV @ 2 A |
|
|
GL41GHE3/96DIODE GEN PURP 400V 1A DO213AB Vishay General Semiconductor - Diodes Division |
3,945 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | - | 10 µA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
|
AS1PK-M3/85ADIODE AVALANCHE 800V 1.5A DO220 Vishay General Semiconductor - Diodes Division |
2,035 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 10.4pF @ 4V, 1MHz | 1.5 µs | 5 µA @ 800 V | 800 V | 1.5A (DC) | -55°C ~ 175°C | 1.15 V @ 1.5 A |
|
|
SS1FL4HM3/IDIODE SCHOTTKY 40V 1A DO-219AB Vishay General Semiconductor - Diodes Division |
3,150 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 115pF @ 4V, 1MHz | - | 200 µA @ 40 V | 40 V | 1A | -55°C ~ 150°C | 500 mV @ 1 A |
|
|
GL41JHE3/96DIODE GEN PURP 600V 1A DO213AB Vishay General Semiconductor - Diodes Division |
3,531 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | - | 10 µA @ 600 V | 600 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
|
AS1PM-M3/85ADIODE AVALANCHE 1KV 1.5A DO220 Vishay General Semiconductor - Diodes Division |
2,742 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 10.4pF @ 4V, 1MHz | 1.5 µs | 5 µA @ 1000 V | 1000 V | 1.5A (DC) | -55°C ~ 175°C | 1.15 V @ 1.5 A |
|
|
SS2FL4-M3/IDIODE SCHOTTKY 40V 2A DO-219AB Vishay General Semiconductor - Diodes Division |
2,324 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 125pF @ 4V, 1MHz | - | 220 µA @ 40 V | 40 V | 2A | -55°C ~ 150°C | 580 mV @ 2 A |
|
|
GL41KHE3/96DIODE GEN PURP 800V 1A DO213AB Vishay General Semiconductor - Diodes Division |
3,469 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | - | 10 µA @ 800 V | 800 V | 1A | -65°C ~ 175°C | 1.2 V @ 1 A |
|
|
AS1PK-M3/84ADIODE AVALANCHE 800V 1.5A DO220 Vishay General Semiconductor - Diodes Division |
3,000 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 10.4pF @ 4V, 1MHz | 1.5 µs | 5 µA @ 800 V | 800 V | 1.5A (DC) | -55°C ~ 175°C | 1.15 V @ 1.5 A |
|
|
SS1FL3HM3/HDIODE SCHOTTKY 30V 1A DO-219AB Vishay General Semiconductor - Diodes Division |
3,775 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 130pF @ 4V, 1MHz | - | 200 µA @ 30 V | 30 V | 1A | -55°C ~ 150°C | 480 mV @ 1 A |
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