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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SE20AFB-M3/6ADIODE GEN PURP 100V 1.3A DO221AC Vishay General Semiconductor - Diodes Division |
3,187 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 12pF @ 4V, 1MHz | 1.2 µs | 5 µA @ 100 V | 100 V | 1.3A (DC) | -55°C ~ 175°C | 1.1 V @ 2 A | |
|
SS25HE3_A/HDIODE SCHOTTKY 50V 2A DO214AA Vishay General Semiconductor - Diodes Division |
2,571 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 50 V | 50 V | 2A | -65°C ~ 150°C | 700 mV @ 2 A |
|
SE20FDHM3/HDIODE GEN PURP 200V 1.7A DO219AB Vishay General Semiconductor - Diodes Division |
3,195 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 13pF @ 4V, 1MHz | 920 ns | 5 µA @ 200 V | 200 V | 1.7A | -55°C ~ 175°C | 1.1 V @ 2 A |
|
|
SS25HE3_A/IDIODE SCHOTTKY 50V 2A DO214AA Vishay General Semiconductor - Diodes Division |
3,191 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 50 V | 50 V | 2A | -65°C ~ 150°C | 700 mV @ 2 A |
|
|
SE20FDHM3/IDIODE GEN PURP 200V 1.7A DO219AB Vishay General Semiconductor - Diodes Division |
2,446 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 13pF @ 4V, 1MHz | 920 ns | 5 µA @ 200 V | 200 V | 1.7A | -55°C ~ 175°C | 1.1 V @ 2 A |
|
SS29HE3_A/HDIODE SCHOTTKY 90V 1.5A DO214AA Vishay General Semiconductor - Diodes Division |
3,158 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q100 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 30 µA @ 90 V | 90 V | 1.5A | -55°C ~ 150°C | 950 mV @ 3 A |
|
|
SE20FGHM3/HDIODE GEN PURP 400V 1.7A DO219AB Vishay General Semiconductor - Diodes Division |
2,351 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 13pF @ 4V, 1MHz | 920 ns | 5 µA @ 400 V | 400 V | 1.7A | -55°C ~ 175°C | 1.1 V @ 2 A |
|
|
SS29HE3_A/IDIODE SCHOTTKY 90V 1.5A DO214AA Vishay General Semiconductor - Diodes Division |
3,589 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q100 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 30 µA @ 90 V | 90 V | 1.5A | -55°C ~ 150°C | 950 mV @ 3 A |
|
|
SE20FJHM3/IDIODE GEN PURP 600V 1.7A DO219AB Vishay General Semiconductor - Diodes Division |
3,153 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 13pF @ 4V, 1MHz | 920 ns | 5 µA @ 600 V | 600 V | 1.7A | -55°C ~ 175°C | 1.1 V @ 2 A |
|
|
ES2AHE3_A/HDIODE GEN PURP 50V 2A DO214AA Vishay General Semiconductor - Diodes Division |
2,510 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 18pF @ 4V, 1MHz | 20 ns | 10 µA @ 50 V | 50 V | 2A | -55°C ~ 150°C | 900 mV @ 2 A |
|
|
ES2CHE3_A/HDIODE GEN PURP 150V 2A DO214AA Vishay General Semiconductor - Diodes Division |
2,193 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 18pF @ 4V, 1MHz | 20 ns | 10 µA @ 50 V | 150 V | 2A | -55°C ~ 150°C | 900 mV @ 2 A |
|
|
ES2FHE3_A/HDIODE GEN PURP 300V 2A DO214AA Vishay General Semiconductor - Diodes Division |
3,371 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 35 ns | 10 µA @ 50 V | 300 V | 2A | -55°C ~ 150°C | 1.1 V @ 2 A |
|
|
ES2FHE3_A/IDIODE GEN PURP 300V 2A DO214AA Vishay General Semiconductor - Diodes Division |
2,209 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 35 ns | 10 µA @ 50 V | 300 V | 2A | -55°C ~ 150°C | 1.1 V @ 2 A |
|
SBYV28-150-E3/54DIODE GEN PURP 150V 3.5A DO201AD Vishay General Semiconductor - Diodes Division |
2,866 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 20 ns | 5 µA @ 150 V | 150 V | 3.5A | -55°C ~ 150°C | 1.1 V @ 3.5 A | |
|
|
ES2GHE3_A/IDIODE GEN PURP 400V 2A DO214AA Vishay General Semiconductor - Diodes Division |
2,587 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 35 ns | 10 µA @ 50 V | 400 V | 2A | -55°C ~ 150°C | 1.1 V @ 2 A |
|
|
UG4A-E3/54DIODE GEN PURP 50V 4A DO201AD Vishay General Semiconductor - Diodes Division |
3,535 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 30 ns | 5 µA @ 50 V | 50 V | 4A | -55°C ~ 150°C | 950 mV @ 4 A | |
|
|
UG4A-M3/54DIODE GEN PURP 50V 4A DO201AD Vishay General Semiconductor - Diodes Division |
2,964 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 30 ns | 5 µA @ 50 V | 50 V | 4A | -55°C ~ 150°C | 950 mV @ 4 A | |
|
|
UG4B-E3/54DIODE GEN PURP 100V 4A DO201AD Vishay General Semiconductor - Diodes Division |
2,918 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 30 ns | 5 µA @ 100 V | 100 V | 4A | -55°C ~ 150°C | 950 mV @ 4 A | |
|
RS1AHE3_A/HDIODE GEN PURP 50V 1A DO214AC Vishay General Semiconductor - Diodes Division |
2,730 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 150 ns | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A |
|
|
UG4B-M3/54DIODE GEN PURP 100V 4A DO201AD Vishay General Semiconductor - Diodes Division |
2,894 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 30 ns | 5 µA @ 100 V | 100 V | 4A | -55°C ~ 150°C | 950 mV @ 4 A |
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