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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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RS1J-E3S/61TDIODE GEN PURP 600V Vishay General Semiconductor - Diodes Division |
2,998 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 7pF @ 4V, 1MHz | 250 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
|
ES1DHM3_A/I1A 200V SM ULTRAFAST RECT SMA Vishay General Semiconductor - Diodes Division |
3,240 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 25 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 920 mV @ 1 A |
|
RMPG06GHE3_A/53DIODE GPP 1A 400V 150NS MPG06 Vishay General Semiconductor - Diodes Division |
2,996 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | Automotive, AEC-Q101, Superectifier® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 6.6pF @ 4V, 1MHz | 150 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A |
|
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ES1BHM3_A/I1A 100V SM ULTRAFAST RECT SMA Vishay General Semiconductor - Diodes Division |
3,982 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 25 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 920 mV @ 1 A |
|
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RMPG06J-E3/100DIODE GPP 1A 600V 200NS MPG06 Vishay General Semiconductor - Diodes Division |
3,836 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 6.6pF @ 4V, 1MHz | 200 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A |
|
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ES1DHM3_A/H1A 200V SM ULTRAFAST RECT SMA Vishay General Semiconductor - Diodes Division |
3,293 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 25 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 920 mV @ 1 A |
|
|
RMPG06J-E3/53DIODE GPP 1A 600V 200NS MPG06 Vishay General Semiconductor - Diodes Division |
3,188 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 6.6pF @ 4V, 1MHz | 200 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
|
|
RMPG06JHE3_A/53DIODE GPP 1A 600V 200NS MPG06 Vishay General Semiconductor - Diodes Division |
2,187 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | Automotive, AEC-Q101, Superectifier® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 6.6pF @ 4V, 1MHz | 200 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A |
|
VS-2EGH02HM3_A/IDIODE GEN PURP 200V 2A DO214AA Vishay General Semiconductor - Diodes Division |
2,674 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 2 µA @ 200 V | 200 V | 2A | -65°C ~ 175°C | 900 mV @ 2 A |
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SS3P4-6002M3/84ADIODE SCHOTTKY Vishay General Semiconductor - Diodes Division |
3,727 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | 130pF @ 4V, 1MHz | - | 150 µA @ 40 V | 40 V | 3A | -55°C ~ 150°C | 600 mV @ 3 A | |
|
BYG10MHM3_A/HDIODE AVALANCHE 1KV 1.5A DO214AC Vishay General Semiconductor - Diodes Division |
3,119 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 4 µs | 1 µA @ 1000 V | 1000 V | 1.5A | -55°C ~ 150°C | 1.15 V @ 1.5 A |
|
|
BYG10MHM3_A/IDIODE AVALANCHE 1KV 1.5A DO214AC Vishay General Semiconductor - Diodes Division |
2,742 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 4 µs | 1 µA @ 1000 V | 1000 V | 1.5A | -55°C ~ 150°C | 1.15 V @ 1.5 A |
|
|
BYG23MHM3_A/HDIODE AVALANCHE 1KV 1.5A DO214AC Vishay General Semiconductor - Diodes Division |
2,066 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 75 ns | 5 µA @ 1000 V | 1000 V | 1.5A | -55°C ~ 150°C | 1.7 V @ 1 A |
|
|
AR1PDHM3/84ADIODE AVALANCHE 200V 1A DO220AA Vishay General Semiconductor - Diodes Division |
2,310 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 12.5pF @ 4V, 1MHz | 140 ns | 1 µA @ 200 V | 200 V | 1A | -55°C ~ 175°C | 1.25 V @ 1 A |
|
|
BYG23MHM3_A/IDIODE AVALANCHE 1KV 1.5A DO214AC Vishay General Semiconductor - Diodes Division |
3,819 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 75 ns | 5 µA @ 1000 V | 1000 V | 1.5A | -55°C ~ 150°C | 1.7 V @ 1 A |
|
|
AR1PDHM3/85ADIODE AVALANCHE 200V 1A DO220AA Vishay General Semiconductor - Diodes Division |
2,907 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 12.5pF @ 4V, 1MHz | 140 ns | 1 µA @ 200 V | 200 V | 1A | -55°C ~ 175°C | 1.25 V @ 1 A |
|
|
SS2H9HE3_A/HDIODE SCHOTTKY 90V 2A DO214AA Vishay General Semiconductor - Diodes Division |
2,993 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q100 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 10 µA @ 90 V | 90 V | 2A | -65°C ~ 175°C | 790 mV @ 2 A |
|
VS-2EJH01-M3/6ADIODE GEN PURP 100V 2A DO221AC Vishay General Semiconductor - Diodes Division |
2,355 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 2 µA @ 100 V | 100 V | 2A | -65°C ~ 175°C | 930 mV @ 2 A |
|
SS3P4LHM3_A/IDIODE SCHOTTKY 40V 3A TO277A Vishay General Semiconductor - Diodes Division |
2,797 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 250 µA @ 40 V | 40 V | 3A | -55°C ~ 150°C | 470 mV @ 3 A |
|
|
AR1PGHM3/84ADIODE AVALANCHE 400V 1A DO220AA Vishay General Semiconductor - Diodes Division |
2,921 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 12.5pF @ 4V, 1MHz | 140 ns | 1 µA @ 400 V | 400 V | 1A | -55°C ~ 175°C | 1.25 V @ 1 A |
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