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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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AU1PGHM3/85ADIODE AVALANCHE 400V 1A DO220AA Vishay General Semiconductor - Diodes Division |
3,195 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 11pF @ 4V, 1MHz | 75 ns | 1 µA @ 400 V | 400 V | 1A | -55°C ~ 175°C | 1.5 V @ 1 A |
|
RS07D-GS18DIODE GP 200V 500MA DO219AB Vishay General Semiconductor - Diodes Division |
2,038 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 9pF @ 4V, 1MHz | 150 ns | 10 µA @ 200 V | 200 V | 500mA | -55°C ~ 150°C | 1.15 V @ 700 mA |
|
SS34HE3_B/HDIODE SCHOTTKY 40V 3A DO214AB Vishay General Semiconductor - Diodes Division |
3,774 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 40 V | 40 V | 3A | -55°C ~ 150°C | 500 mV @ 3 A |
|
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AU1PJHM3/84ADIODE AVALANCHE 600V 1A DO220AA Vishay General Semiconductor - Diodes Division |
2,977 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 11pF @ 4V, 1MHz | 75 ns | 1 µA @ 600 V | 600 V | 1A | -55°C ~ 175°C | 1.5 V @ 1 A |
|
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RS07D-GS08DIODE GP 200V 500MA DO219AB Vishay General Semiconductor - Diodes Division |
3,744 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 9pF @ 4V, 1MHz | 150 ns | 10 µA @ 200 V | 200 V | 500mA | -55°C ~ 150°C | 1.15 V @ 700 mA |
|
|
SS34HE3_B/IDIODE SCHOTTKY 40V 3A DO214AB Vishay General Semiconductor - Diodes Division |
3,936 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 40 V | 40 V | 3A | -55°C ~ 150°C | 500 mV @ 3 A |
|
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AU1PJHM3/85ADIODE AVALANCHE 600V 1A DO220AA Vishay General Semiconductor - Diodes Division |
2,533 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 11pF @ 4V, 1MHz | 75 ns | 1 µA @ 600 V | 600 V | 1A | -55°C ~ 175°C | 1.5 V @ 1 A |
|
VS-2EJH01HM3/6ADIODE GEN PURP 100V 2A DO221AC Vishay General Semiconductor - Diodes Division |
2,860 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 2 µA @ 100 V | 100 V | 2A | -65°C ~ 175°C | 930 mV @ 2 A |
|
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V8PM45-M3/IRECTIFIER BARRIER SCHOTTKY TO-27 Vishay General Semiconductor - Diodes Division |
2,621 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 1450pF @ 4V, 1MHz | - | 200 µA @ 45 V | 45 V | 8A | -40°C ~ 175°C | 600 mV @ 8 A |
|
|
AU1PKHM3/85ADIODE AVALANCHE 800V 1A DO220AA Vishay General Semiconductor - Diodes Division |
2,385 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 7.5pF @ 4V, 1MHz | 75 ns | 1 µA @ 800 V | 800 V | 1A | -55°C ~ 175°C | 1.85 V @ 1 A |
|
|
V3PL45HM3/ISCHOTTKY RECTIFIER 3A 45V SMP Vishay General Semiconductor - Diodes Division |
3,164 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 550pF @ 4V, 1MHz | - | 450 µA @ 45 V | 45 V | 3A (DC) | -40°C ~ 150°C | 540 mV @ 3 A |
|
|
V8PM15-M3/IRECTIFIER BARRIER SCHOTTKY TO-27 Vishay General Semiconductor - Diodes Division |
2,333 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 460pF @ 4V, 1MHz | - | 150 µA @ 150 V | 150 V | 8A | -40°C ~ 175°C | 1.08 V @ 8 A |
|
|
AU1PMHM3/85ADIODE AVALANCHE 1000V 1A DO220AA Vishay General Semiconductor - Diodes Division |
3,737 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 7.5pF @ 4V, 1MHz | 75 ns | 1 µA @ 1000 V | 1000 V | 1A | -55°C ~ 175°C | 1.85 V @ 1 A |
|
USB260-M3/5BTDIODE GEN PURP 600V 2A DO214AA Vishay General Semiconductor - Diodes Division |
3,484 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 45pF @ 4V, 1MHz | 30 ns | 5 µA @ 600 V | 600 V | 2A | -55°C ~ 150°C | 1.6 V @ 2 A | |
|
SB2H90-E3/54DIODE SCHOTTKY 90V 2A DO204AC Vishay General Semiconductor - Diodes Division |
2,315 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 10 µA @ 90 V | 90 V | 2A | -55°C ~ 175°C | 790 mV @ 2 A | ||
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SE20AFB-M3/6BDIODE GEN PURP 100V 1.3A DO221AC Vishay General Semiconductor - Diodes Division |
3,005 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 12pF @ 4V, 1MHz | 1.2 µs | 5 µA @ 100 V | 100 V | 1.3A (DC) | -55°C ~ 175°C | 1.1 V @ 2 A | |
|
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SE20AFD-M3/6BDIODE GEN PURP 200V 1.3A DO221AC Vishay General Semiconductor - Diodes Division |
3,903 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 12pF @ 4V, 1MHz | 1.2 µs | 5 µA @ 200 V | 200 V | 1.3A (DC) | -55°C ~ 175°C | 1.1 V @ 2 A | |
|
S5MS-E3/57TDIODE GP 1KV 1.6A DO214AB Vishay General Semiconductor - Diodes Division |
2,350 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 40pF @ 4V, 1MHz | 2.5 µs | 10 µA @ 1000 V | 1000 V | 1.6A (DC) | -55°C ~ 150°C | 940 mV @ 2.5 A | |
|
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SE20AFG-M3/6BDIODE GEN PURP 400V 1.3A DO221AC Vishay General Semiconductor - Diodes Division |
2,600 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 12pF @ 4V, 1MHz | 1.2 µs | 5 µA @ 400 V | 400 V | 1.3A (DC) | -55°C ~ 175°C | 1.1 V @ 2 A | |
|
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SE20AFJ-M3/6BDIODE GEN PURP 600V 1.3A DO221AC Vishay General Semiconductor - Diodes Division |
2,672 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 12pF @ 4V, 1MHz | 1.2 µs | 5 µA @ 600 V | 600 V | 1.3A (DC) | -55°C ~ 175°C | 1.1 V @ 2 A |
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