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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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MURS160HE3_A/HDIODE GEN PURP 600V 2A DO214AA Vishay General Semiconductor - Diodes Division |
3,491 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 75 ns | 5 µA @ 600 V | 600 V | 2A | -65°C ~ 175°C | 1.25 V @ 1 A |
|
EGF1T-E3/67ADIODE GEN PURP 1.3KV 1A DO214BA Vishay General Semiconductor - Diodes Division |
2,195 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 75 ns | 5 µA @ 1300 V | 1300 V | 1A | -55°C ~ 150°C | 3 V @ 1 A |
|
VS-MBRB1045TRL-M3DIODE SCHOTTKY 45V 10A TO263AB Vishay General Semiconductor - Diodes Division |
2,541 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 600pF @ 5V, 1MHz | - | 100 µA @ 45 V | 45 V | 10A | -65°C ~ 150°C | 570 mV @ 10 A | |
|
VS-40HFL100S05DIODE GEN PURP 1KV 40A DO203AB Vishay General Semiconductor - Diodes Division |
3,137 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | 500 ns | 100 µA @ 1000 V | 1000 V | 40A | -40°C ~ 125°C | 1.95 V @ 40 A | |
|
VS-60EPU06-N3DIODE GEN PURP 600V 60A TO247AC Vishay General Semiconductor - Diodes Division |
3,996 | - |
RFQ |
Scheda tecnica |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 81 ns | 50 µA @ 600 V | 600 V | 60A | -55°C ~ 175°C | 1.68 V @ 60 A |
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VS-C4PU3006LHN3DIODE GEN PURP 600V 15A TO247AD Vishay General Semiconductor - Diodes Division |
2,703 | - |
RFQ |
Scheda tecnica |
Tube | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 60 ns | 15 µA @ 600 V | 600 V | 15A | -55°C ~ 175°C | 1.55 V @ 15 A |
|
VS-20ETF02FP-M3DIODE GEN PURP 200V 20A TO220FP Vishay General Semiconductor - Diodes Division |
3,288 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 160 ns | 100 µA @ 200 V | 200 V | 20A | -40°C ~ 150°C | 1.67 V @ 60 A | |
|
|
VS-70HFLR100S05DIODE GEN PURP 1KV 70A DO203AB Vishay General Semiconductor - Diodes Division |
3,501 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | 500 ns | 100 µA @ 1000 V | 1000 V | 70A | -40°C ~ 125°C | 1.85 V @ 219.8 A | |
|
VS-30EPU12L-N3DIODE GEN PURP 1.2KV 30A TO247AD Vishay General Semiconductor - Diodes Division |
3,085 | - |
RFQ |
Scheda tecnica |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 220 ns | 145 µA @ 1200 V | 1200 V | 30A | -55°C ~ 175°C | 2.68 V @ 30 A |
|
|
VS-20ETF04FP-M3DIODE GEN PURP 400V 20A TO220FP Vishay General Semiconductor - Diodes Division |
3,341 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 160 ns | 100 µA @ 400 V | 400 V | 20A | -40°C ~ 150°C | 1.67 V @ 60 A | |
|
BYV26B-TAPDIODE AVALANCHE 400V 1A SOD57 Vishay General Semiconductor - Diodes Division |
3,931 | - |
RFQ |
Scheda tecnica |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 30 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 175°C | 2.5 V @ 1 A | |
|
UG4D-E3/54DIODE GEN PURP 200V 4A DO201AD Vishay General Semiconductor - Diodes Division |
2,316 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 30 ns | 5 µA @ 200 V | 200 V | 4A | -55°C ~ 150°C | 950 mV @ 4 A | |
|
|
VS-20ETF02STRR-M3DIODE GEN PURP 200V 20A TO263AB Vishay General Semiconductor - Diodes Division |
2,495 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 160 ns | 100 µA @ 200 V | 200 V | 20A | -40°C ~ 150°C | 1.3 V @ 20 A | |
|
V8PM15-M3/HDIODE SCHOTTKY 8A 150V SMPC Vishay General Semiconductor - Diodes Division |
3,434 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 460pF @ 4V, 1MHz | - | 150 µA @ 150 V | 150 V | 8A | -40°C ~ 175°C | 1.08 V @ 8 A |
|
|
VS-20ETF06FP-M3DIODE GEN PURP 600V 20A TO220FP Vishay General Semiconductor - Diodes Division |
3,973 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 160 ns | 100 µA @ 600 V | 600 V | 20A | -40°C ~ 150°C | 1.67 V @ 60 A | |
|
|
VS-20ETF04STRR-M3DIODE GEN PURP 400V 20A TO263AB Vishay General Semiconductor - Diodes Division |
3,783 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 160 ns | 100 µA @ 400 V | 400 V | 20A | -40°C ~ 150°C | 1.3 V @ 20 A | |
|
|
SS24HE3_A/HDIODE SCHOTTKY 40V 2A DO214AA Vishay General Semiconductor - Diodes Division |
2,346 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 40 V | 40 V | 2A | -65°C ~ 150°C | 500 mV @ 2 A |
|
|
SS8P3L-M3/86ADIODE SCHOTTKY 30V 8A TO277A Vishay General Semiconductor - Diodes Division |
3,367 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 330pF @ 4V, 1MHz | - | 200 µA @ 30 V | 30 V | 8A | -55°C ~ 150°C | 570 mV @ 8 A |
|
|
BYW56-TRDIODE AVALANCHE 1000V 2A SOD57 Vishay General Semiconductor - Diodes Division |
2,859 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 4 µs | 1 µA @ 1000 V | 1000 V | 2A | -55°C ~ 175°C | 1 V @ 1 A | |
|
|
BYV38-TRDIODE AVALANCHE 1KV 2A SOD57 Vishay General Semiconductor - Diodes Division |
2,025 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | 15pF @ 4V, 1MHz | 300 ns | 5 µA @ 1000 V | 1000 V | 2A | -55°C ~ 175°C | 1.1 V @ 1 A |
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