Diodi-Raddrizzatori-Singoli

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
BYW56-TAP

BYW56-TAP

DIODE AVALANCHE 1KV 2A SOD57

Vishay General Semiconductor - Diodes Division
2,162 -

RFQ

BYW56-TAP

Scheda tecnica

Cut Tape (CT),Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Avalanche Active Through Hole - 4 µs 1 µA @ 1000 V 1000 V 2A -55°C ~ 175°C 1 V @ 1 A
BY268TR

BY268TR

DIODE GEN PURP 1.4KV 800MA SOD57

Vishay General Semiconductor - Diodes Division
3,198 -

RFQ

BY268TR

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 400 ns 2 µA @ 1400 V 1400 V 800mA -55°C ~ 150°C 1.25 V @ 400 mA
V8PM15HM3/H

V8PM15HM3/H

DIODE SCHOTTKY 8A 150V SMPC

Vishay General Semiconductor - Diodes Division
3,309 -

RFQ

V8PM15HM3/H

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, eSMP®, TMBS® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 460pF @ 4V, 1MHz - 150 µA @ 150 V 150 V 8A -40°C ~ 175°C 1.08 V @ 8 A
VS-20ETF12FP-M3

VS-20ETF12FP-M3

DIODE GEN PURP 1.2KV 20A TO220FP

Vishay General Semiconductor - Diodes Division
2,632 -

RFQ

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 400 ns 100 µA @ 1200 V 1200 V 20A -40°C ~ 150°C 1.31 V @ 20 A
VS-20ETF02STRL-M3

VS-20ETF02STRL-M3

DIODE GEN PURP 200V 20A TO263AB

Vishay General Semiconductor - Diodes Division
3,387 -

RFQ

VS-20ETF02STRL-M3

Scheda tecnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 160 ns 100 µA @ 200 V 200 V 20A -40°C ~ 150°C 1.3 V @ 20 A
VS-20ETF10FP-M3

VS-20ETF10FP-M3

DIODE GEN PURP 1KV 20A TO220FP

Vishay General Semiconductor - Diodes Division
2,797 -

RFQ

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 95 ns 100 µA @ 1000 V 1000 V 20A -40°C ~ 150°C 1.31 V @ 20 A
VS-20ETF06STRR-M3

VS-20ETF06STRR-M3

DIODE GEN PURP 600V 20A TO263AB

Vishay General Semiconductor - Diodes Division
3,877 -

RFQ

VS-20ETF06STRR-M3

Scheda tecnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 160 ns 100 µA @ 600 V 600 V 20A -40°C ~ 150°C 1.3 V @ 20 A
VS-87HF40

VS-87HF40

DIODE GEN PURP 400V 85A DO203AB

Vishay General Semiconductor - Diodes Division
2,657 -

RFQ

VS-87HF40

Scheda tecnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - - 400 V 85A -65°C ~ 180°C 1.2 V @ 267 A
VS-87HFR40

VS-87HFR40

DIODE GEN PURP 400V 85A DO203AB

Vishay General Semiconductor - Diodes Division
2,566 -

RFQ

VS-87HFR40

Scheda tecnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - - 400 V 85A -65°C ~ 180°C 1.2 V @ 267 A
VS-35APF06L-M3

VS-35APF06L-M3

RECTIFIER DIODE 35A 600V TO-247A

Vishay General Semiconductor - Diodes Division
3,932 -

RFQ

VS-35APF06L-M3

Scheda tecnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 160 ns 100 µA @ 600 V 600 V 35A -40°C ~ 150°C 1.46 V @ 35 A
VS-APU6006-N3

VS-APU6006-N3

DIODE GEN PURP 600V 30A TO247AC

Vishay General Semiconductor - Diodes Division
3,612 -

RFQ

VS-APU6006-N3

Scheda tecnica

Tube FRED Pt® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 45 ns 30 µA @ 600 V 600 V 30A -40°C ~ 150°C 2 V @ 30 A
VS-40HFL20S02

VS-40HFL20S02

DIODE GEN PURP 200V 40A DO203AB

Vishay General Semiconductor - Diodes Division
3,242 -

RFQ

VS-40HFL20S02

Scheda tecnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - 200 ns 100 µA @ 200 V 200 V 40A -40°C ~ 125°C 1.95 V @ 40 A
VS-35EPF06L-M3

VS-35EPF06L-M3

RECTIFIER DIODE 35A 600V TO-247A

Vishay General Semiconductor - Diodes Division
3,092 -

RFQ

VS-35EPF06L-M3

Scheda tecnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 160 ns 100 µA @ 600 V 600 V 35A -40°C ~ 150°C 1.46 V @ 35 A
VS-1N1190A

VS-1N1190A

DIODE GEN PURP 600V 40A DO203AB

Vishay General Semiconductor - Diodes Division
3,596 -

RFQ

VS-1N1190A

Scheda tecnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 2.5 mA @ 600 V 600 V 40A -65°C ~ 200°C 1.3 V @ 126 A
USB260-M3/52T

USB260-M3/52T

DIODE GEN PURP 600V 2A DO214AA

Vishay General Semiconductor - Diodes Division
2,078 -

RFQ

USB260-M3/52T

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 45pF @ 4V, 1MHz 30 ns 5 µA @ 600 V 600 V 2A -55°C ~ 150°C 1.6 V @ 2 A
SB540-E3/54

SB540-E3/54

DIODE SCHOTTKY 40V 5A DO201AD

Vishay General Semiconductor - Diodes Division
3,592 -

RFQ

SB540-E3/54

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 40 V 40 V 5A -65°C ~ 150°C 480 mV @ 5 A
VS-E5TH3012-M3

VS-E5TH3012-M3

30A, 1200V, "X" SERIES FRED PT I

Vishay General Semiconductor - Diodes Division
3,544 -

RFQ

Tube FRED Pt® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 58 ns 50 µA @ 1200 V 1200 V 30A -55°C ~ 175°C 2.5 V @ 30 A
SS26HE3_A/H

SS26HE3_A/H

DIODE SCHOTTKY 60V 2A DO214AA

Vishay General Semiconductor - Diodes Division
3,668 -

RFQ

SS26HE3_A/H

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 400 µA @ 60 V 60 V 2A -65°C ~ 150°C 700 mV @ 2 A
ES2GHE3_A/H

ES2GHE3_A/H

DIODE GEN PURP 300V 2A DO214AA

Vishay General Semiconductor - Diodes Division
3,160 -

RFQ

ES2GHE3_A/H

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 15pF @ 4V, 1MHz 35 ns 10 µA @ 50 V 300 V 2A -55°C ~ 150°C 1.1 V @ 2 A
UF5404-E3/54

UF5404-E3/54

DIODE GEN PURP 400V 3A DO201AD

Vishay General Semiconductor - Diodes Division
3,201 -

RFQ

UF5404-E3/54

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 45pF @ 4V, 1MHz 50 ns 10 µA @ 400 V 400 V 3A -55°C ~ 150°C 1 V @ 3 A
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