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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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BYM13-50-E3/97DIODE SCHOTTKY 50V 1A DO213AB Vishay General Semiconductor - Diodes Division |
3,792 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 80pF @ 4V, 1MHz | - | 500 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 700 mV @ 1 A | |
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31GF4-M3/54DIODE GEN PURP 400V 3A DO201AD Vishay General Semiconductor - Diodes Division |
3,514 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 30 ns | 20 µA @ 400 V | 400 V | 3A | -40°C ~ 150°C | 1.25 V @ 3 A | |
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VS-3EJH02-M3/6ADIODE GEN PURP 200V 3A DO221AC Vishay General Semiconductor - Diodes Division |
2,431 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 18 ns | 2 µA @ 200 V | 200 V | 3A | -65°C ~ 175°C | 930 mV @ 3 A |
|
SE12DB-M3/IDIODE GEN PURP 100V 3.2A TO263AC Vishay General Semiconductor - Diodes Division |
2,913 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 90pF @ 4V, 1MHz | 3 µs | 20 µA @ 100 V | 100 V | 3.2A | -55°C ~ 175°C | 1.15 V @ 12 A |
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MURS360HM3_A/I3A 600V SM ULTRAFAST RECT SMC Vishay General Semiconductor - Diodes Division |
2,096 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 75 ns | 10 µA @ 600 V | 600 V | 4A | -65°C ~ 175°C | 1.28 V @ 4 A |
|
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SE12DD-M3/IDIODE GEN PURP 400V 3.2A TO263AC Vishay General Semiconductor - Diodes Division |
3,499 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 90pF @ 4V, 1MHz | 3 µs | 20 µA @ 200 V | 200 V | 3.2A | -55°C ~ 175°C | 1.15 V @ 12 A |
|
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MUR440-E3/73DIODE GEN PURP 400V 4A DO201AD Vishay General Semiconductor - Diodes Division |
2,207 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 75 ns | 10 µA @ 400 V | 400 V | 4A | -65°C ~ 175°C | 1.28 V @ 4 A | |
|
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SE12DG-M3/IDIODE GEN PURP 400V 3.2A TO263AC Vishay General Semiconductor - Diodes Division |
3,280 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 90pF @ 4V, 1MHz | 3 µs | 20 µA @ 400 V | 400 V | 3.2A | -55°C ~ 175°C | 1.15 V @ 12 A |
|
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MURS360HM3_A/H3A 600V SM ULTRAFAST RECT SMC Vishay General Semiconductor - Diodes Division |
3,696 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 75 ns | 10 µA @ 600 V | 600 V | 4A | -65°C ~ 175°C | 1.28 V @ 4 A |
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UF1007-E3/54DIODE GEN PURP 1KV 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,117 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 17pF @ 4V, 1MHz | 75 ns | 10 µA @ 1000 V | 1000 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | ||
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VFT760-M3/4WDIODE SCHOTTKY 7.5A 60V ITO-220A Vishay General Semiconductor - Diodes Division |
3,141 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 700 µA @ 60 V | 60 V | 7.5A | -55°C ~ 150°C | 800 mV @ 7.5 A | |
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VSSB7L45-M3/5BTDIODE SCHOTTKY 45V 3.8A DO214AA Vishay General Semiconductor - Diodes Division |
2,113 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 1068pF @ 4V, 1MHz | - | 1.6 mA @ 45 V | 45 V | 3.8A (DC) | -40°C ~ 150°C | 430 mV @ 3.5 A |
|
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AS3BD-M3/HDIODE AVALANCHE 200V 3A DO214AA Vishay General Semiconductor - Diodes Division |
3,046 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 40pF @ 4V, 1MHz | - | 20 µA @ 600 V | 200 V | 3A (DC) | -55°C ~ 175°C | 1.05 V @ 3 A | |
|
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AS3BD-M3/IDIODE AVALANCHE 200V 3A DO214AA Vishay General Semiconductor - Diodes Division |
2,673 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 40pF @ 4V, 1MHz | - | 20 µA @ 600 V | 200 V | 3A (DC) | -55°C ~ 175°C | 1.05 V @ 3 A | |
|
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AS3BG-M3/HDIODE AVALANCHE 400V 3A DO214AA Vishay General Semiconductor - Diodes Division |
3,557 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 40pF @ 4V, 1MHz | - | 20 µA @ 600 V | 400 V | 3A (DC) | -55°C ~ 175°C | 1.05 V @ 3 A | |
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AS3BG-M3/IDIODE AVALANCHE 400V 3A DO214AA Vishay General Semiconductor - Diodes Division |
2,453 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 40pF @ 4V, 1MHz | - | 20 µA @ 600 V | 400 V | 3A (DC) | -55°C ~ 175°C | 1.05 V @ 3 A | |
|
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BA159GP-E3/73DIODE GEN PURP 1KV 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,788 | - |
RFQ |
Scheda tecnica |
Cut Tape (CT),Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 500 ns | 5 µA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
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1N4007GPE-E3/73DIODE GEN PURP 1KV 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,465 | - |
RFQ |
Scheda tecnica |
Cut Tape (CT),Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 8pF @ 4V, 1MHz | 2 µs | 5 µA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
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SBYV27-100-E3/73DIODE GEN PURP 100V 2A DO204AC Vishay General Semiconductor - Diodes Division |
2,003 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 15 ns | 5 µA @ 100 V | 100 V | 2A | -55°C ~ 150°C | 1.07 V @ 3 A | |
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GP10T-E3/73DIODE GEN PURP 1.3KV 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,133 | - |
RFQ |
Scheda tecnica |
Cut Tape (CT),Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 5pF @ 4V, 1MHz | 3 µs | 5 µA @ 1300 V | 1300 V | 1A | -65°C ~ 150°C | 1.3 V @ 1 A |
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