+86 075582561136
Carica BOM
Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
FESF16FT-E3/45DIODE GEN PURP 300V 16A ITO220AC Vishay General Semiconductor - Diodes Division |
2,021 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 10 µA @ 300 V | 300 V | 16A | -65°C ~ 150°C | 1.3 V @ 16 A | |
|
SE70PJ-M3/87ADIODE GEN PURP 600V 2.9A TO277A Vishay General Semiconductor - Diodes Division |
2,438 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 76pF @ 4V, 1MHz | 2.6 µs | 20 µA @ 100 V | 600 V | 2.9A (DC) | -55°C ~ 175°C | 1.05 V @ 7 A | |
|
|
FESF16FTHE3_A/PDIODE GEN PURP 300V 16A ITO220AC Vishay General Semiconductor - Diodes Division |
2,945 | - |
RFQ |
Scheda tecnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 10 µA @ 300 V | 300 V | 16A | -65°C ~ 150°C | 1.3 V @ 16 A |
|
|
SE70PB-M3/86ADIODE GEN PURP 100V 2.9A TO277A Vishay General Semiconductor - Diodes Division |
3,826 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 76pF @ 4V, 1MHz | 2.6 µs | 20 µA @ 100 V | 100 V | 2.9A (DC) | -55°C ~ 175°C | 1.05 V @ 7 A | |
|
|
FESF16GT-E3/45DIODE GEN PURP 400V 16A ITO220AC Vishay General Semiconductor - Diodes Division |
2,554 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 10 µA @ 400 V | 400 V | 16A | -65°C ~ 150°C | 1.3 V @ 16 A | |
|
|
SE70PD-M3/86ADIODE GEN PURP 200V 2.9A TO277A Vishay General Semiconductor - Diodes Division |
2,918 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 76pF @ 4V, 1MHz | 2.6 µs | 20 µA @ 200 V | 200 V | 2.9A (DC) | -55°C ~ 175°C | 1.05 V @ 7 A | |
|
|
FESF16GTHE3_A/PDIODE GEN PURP 400V 16A ITO220AC Vishay General Semiconductor - Diodes Division |
3,159 | - |
RFQ |
Scheda tecnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 10 µA @ 400 V | 400 V | 16A | -65°C ~ 150°C | 1.3 V @ 16 A |
|
|
SE70PG-M3/86ADIODE GEN PURP 400V 2.9A TO277A Vishay General Semiconductor - Diodes Division |
2,645 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 76pF @ 4V, 1MHz | 2.6 µs | 20 µA @ 400 V | 400 V | 2.9A (DC) | -55°C ~ 175°C | 1.05 V @ 7 A | |
|
VS-30WQ04FNHM3DIODE SCHOTTKY DPAK Vishay General Semiconductor - Diodes Division |
3,949 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 189pF @ 5V, 1MHz | - | 2 mA @ 40 V | 40 V | 3.5A | -40°C ~ 150°C | 530 mV @ 3 A |
|
|
FESF16HTHE3_A/PDIODE GEN PURP 500V 16A ITO220AC Vishay General Semiconductor - Diodes Division |
3,215 | - |
RFQ |
Scheda tecnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 10 µA @ 500 V | 500 V | 16A | -65°C ~ 150°C | 1.5 V @ 16 A |
|
|
SE70PJ-M3/86ADIODE GEN PURP 600V 2.9A TO277A Vishay General Semiconductor - Diodes Division |
3,541 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 76pF @ 4V, 1MHz | 2.6 µs | 20 µA @ 600 V | 600 V | 2.9A (DC) | -55°C ~ 175°C | 1.05 V @ 7 A | |
|
|
VS-30WQ04FNTRHM3DIODE SCHOTTKY DPAK Vishay General Semiconductor - Diodes Division |
3,795 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 189pF @ 5V, 1MHz | - | 2 mA @ 40 V | 40 V | 3.5A | -40°C ~ 150°C | 530 mV @ 3 A |
|
VS-10ETF04-M3DIODE GEN PURP 400V 10A TO220AC Vishay General Semiconductor - Diodes Division |
2,352 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 200 ns | 100 µA @ 400 V | 400 V | 10A | -45°C ~ 150°C | 1.2 V @ 10 A | |
|
|
VT5200-E3/4WDIODE SCHOTTKY 5A 200V TO-220AC Vishay General Semiconductor - Diodes Division |
2,983 | - |
RFQ |
Scheda tecnica |
Tube | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 150 µA @ 200 V | 200 V | 5A | -40°C ~ 150°C | 1.6 V @ 5 A |
|
|
FESF16JTHE3_A/PDIODE GEN PURP 600V 16A ITO220AC Vishay General Semiconductor - Diodes Division |
2,447 | - |
RFQ |
Scheda tecnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 10 µA @ 600 V | 600 V | 16A | -65°C ~ 150°C | 1.5 V @ 16 A |
|
|
VS-30WQ04FNTRLHM3DIODE SCHOTTKY DPAK Vishay General Semiconductor - Diodes Division |
3,287 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 189pF @ 5V, 1MHz | - | 2 mA @ 40 V | 40 V | 3.5A | -40°C ~ 150°C | 530 mV @ 3 A |
|
|
VS-10ETF12-M3DIODE GEN PURP 1.2KV 10A TO220AC Vishay General Semiconductor - Diodes Division |
3,092 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 310 ns | 100 µA @ 1200 V | 1200 V | 10A | -40°C ~ 150°C | 1.33 V @ 10 A | |
|
UF5405-E3/73DIODE GEN PURP 500V 3A DO201AD Vishay General Semiconductor - Diodes Division |
2,830 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 36pF @ 4V, 1MHz | 75 ns | 10 µA @ 500 V | 500 V | 3A | -55°C ~ 150°C | 1.7 V @ 3 A | |
|
VS-8TQ080STRLHM3DIODE SCHOTTKY 80V 8A TO263AB Vishay General Semiconductor - Diodes Division |
3,973 | - |
RFQ |
Scheda tecnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 500pF @ 5V, 1MHz | - | 550 µA @ 80 V | 80 V | 8A | -55°C ~ 175°C | 720 mV @ 8 A |
|
|
VS-30WQ04FNTRRHM3DIODE SCHOTTKY DPAK Vishay General Semiconductor - Diodes Division |
3,373 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 189pF @ 5V, 1MHz | - | 2 mA @ 40 V | 40 V | 3.5A | -40°C ~ 150°C | 530 mV @ 3 A |
- 1500+ Media giornaliera RFQ
- 20,000.000 Unità prodotto standard
- 1800+ Produttori mondiali
- 15,000+ Magazzino in stock
