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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VS-10ETS08-M3DIODE GEN PURP 800V 10A TO220AC Vishay General Semiconductor - Diodes Division |
3,685 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 50 µA @ 800 V | 800 V | 10A | -40°C ~ 150°C | 1.1 V @ 10 A | |
|
VS-65APF12L-M3RECTIFIER DIODE 65A 1200V TO-247 Vishay General Semiconductor - Diodes Division |
3,379 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 480 ns | 100 µA @ 1200 V | 1200 V | 65A | -40°C ~ 150°C | 1.42 V @ 65 A | |
|
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S8CJHM3/IDIODE GEN PURP 600V 8A DO214AB Vishay General Semiconductor - Diodes Division |
3,124 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 79pF @ 4V, 1MHz | 4 µs | 10 µA @ 600 V | 600 V | 8A | -55°C ~ 150°C | 985 mV @ 8 A |
|
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VS-10ETS12-M3DIODE GEN PURP 1.2KV 10A TO220AC Vishay General Semiconductor - Diodes Division |
2,862 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 50 µA @ 1200 V | 1200 V | 10A | -40°C ~ 150°C | 1.1 V @ 10 A | |
|
|
VS-75EPU12L-N3DIODE GEN PURP 1.2KV 75A TO247AD Vishay General Semiconductor - Diodes Division |
3,686 | - |
RFQ |
Scheda tecnica |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 265 ns | 420 µA @ 1200 V | 1200 V | 75A | -55°C ~ 175°C | 2.55 V @ 75 A |
|
V10P15HM3/HDIODE SCHOTTKY 150V 10A TO277A Vishay General Semiconductor - Diodes Division |
3,603 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 150 V | 150 V | 10A | -40°C ~ 150°C | 1.08 V @ 10 A |
|
VS-10TQ035STRLHM3DIODE SCHOTTKY 35V 10A D2PAK Vishay General Semiconductor - Diodes Division |
3,617 | - |
RFQ |
Scheda tecnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 900pF @ 5V, 1MHz | - | 2 mA @ 35 V | 35 V | 10A | -55°C ~ 175°C | 570 mV @ 10 A |
|
VS-12FR10DIODE GEN PURP 100V 12A DO203AA Vishay General Semiconductor - Diodes Division |
3,832 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 12 mA @ 100 V | 100 V | 12A | -65°C ~ 150°C | 1.26 V @ 38 A | |
|
|
V10P15HM3/IDIODE SCHOTTKY 150V 10A TO277A Vishay General Semiconductor - Diodes Division |
3,320 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 150 V | 150 V | 10A | -40°C ~ 150°C | 1.08 V @ 10 A |
|
|
VS-10TQ035STRRHM3DIODE SCHOTTKY 35V 10A D2PAK Vishay General Semiconductor - Diodes Division |
2,908 | - |
RFQ |
Scheda tecnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 900pF @ 5V, 1MHz | - | 2 mA @ 35 V | 35 V | 10A | -55°C ~ 175°C | 570 mV @ 10 A |
|
|
V10PM10HM3/HDIODE SCHOTTKY 100V 10A TO277A Vishay General Semiconductor - Diodes Division |
3,540 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 120 µA @ 100 V | 100 V | 10A | -40°C ~ 150°C | 750 mV @ 10 A |
|
|
VS-8TQ100STRRHM3DIODE SCHOTTKY 100V 8A TO263AB Vishay General Semiconductor - Diodes Division |
3,417 | - |
RFQ |
Scheda tecnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 500pF @ 5V, 1MHz | - | 550 µA @ 80 V | 100 V | 8A | -55°C ~ 175°C | 720 mV @ 8 A |
|
|
V10PM10HM3/IDIODE SCHOTTKY 100V 10A TO277A Vishay General Semiconductor - Diodes Division |
2,113 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 120 µA @ 100 V | 100 V | 10A | -40°C ~ 150°C | 750 mV @ 10 A |
|
VS-30WQ06FNTRHM3DIODE SCHOTTKY DPAK Vishay General Semiconductor - Diodes Division |
3,491 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 145pF @ 5V, 1MHz | - | 2 mA @ 60 V | 60 V | 3.5A | -40°C ~ 150°C | 610 mV @ 3 A |
|
|
V15P10-M3/HDIODE SCHOTTKY 100V 15A TO277A Vishay General Semiconductor - Diodes Division |
3,398 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 100 V | 100 V | 15A | -40°C ~ 150°C | 710 mV @ 15 A |
|
FESF16HT-E3/45DIODE GEN PURP 500V 16A ITO220AC Vishay General Semiconductor - Diodes Division |
3,801 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 10 µA @ 500 V | 500 V | 16A | -65°C ~ 150°C | 1.5 V @ 16 A | |
|
|
VS-30WQ06FNTRLHM3DIODE SCHOTTKY DPAK Vishay General Semiconductor - Diodes Division |
2,811 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 145pF @ 5V, 1MHz | - | 2 mA @ 60 V | 60 V | 3.5A | -40°C ~ 150°C | 610 mV @ 3 A |
|
VS-65PQ015-N3DIODE SCHOTTKY 15V 65A TO247AC Vishay General Semiconductor - Diodes Division |
2,816 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 18 mA @ 15 V | 15 V | 65A | -55°C ~ 125°C | 500 mV @ 65 A | |
|
|
V15P10-M3/IDIODE SCHOTTKY 100V 15A TO277A Vishay General Semiconductor - Diodes Division |
2,212 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 100 V | 100 V | 15A | -40°C ~ 150°C | 710 mV @ 15 A |
|
|
UGF8FTHE3_A/PDIODE GEN PURP 300V 8A ITO220AC Vishay General Semiconductor - Diodes Division |
2,663 | - |
RFQ |
Scheda tecnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 10 µA @ 300 V | 300 V | 8A | -40°C ~ 150°C | 1.25 V @ 8 A |
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