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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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1N5406GP-E3/54DIODE GEN PURP 600V 3A DO201AD Vishay General Semiconductor - Diodes Division |
2,235 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 30pF @ 4V, 1MHz | - | 5 µA @ 400 V | 600 V | 3A | -50°C ~ 150°C | 1.2 V @ 3 A | |
|
V15PM6-M3/IRECTIFIER BARRIER SCHOTTKY TO-27 Vishay General Semiconductor - Diodes Division |
3,812 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 2300pF @ 4V, 1MHz | - | 1.2 mA @ 60 V | 60 V | 15A | -40°C ~ 175°C | 640 mV @ 15 A |
|
V12P6-M3/87ADIODE SCHOTTKY 60V 4.6A TO277A Vishay General Semiconductor - Diodes Division |
2,355 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 2.9 mA @ 60 V | 60 V | 4.6A | -40°C ~ 150°C | 610 mV @ 12 A |
|
|
1N5408GP-E3/54DIODE GEN PURP 1KV 3A DO201AD Vishay General Semiconductor - Diodes Division |
2,629 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 30pF @ 4V, 1MHz | - | 5 µA @ 400 V | 1000 V | 3A | -50°C ~ 150°C | 1.2 V @ 3 A | |
|
|
VS-65EPF12L-M3RECTIFIER DIODE 65A 1200V TO-247 Vishay General Semiconductor - Diodes Division |
2,754 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 480 ns | 100 µA @ 1200 V | 1200 V | 65A | -40°C ~ 150°C | 1.42 V @ 65 A | |
|
CS3G-E3/IDIODE GPP 400V 3.0A DO-214AB Vishay General Semiconductor - Diodes Division |
2,541 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 26pF @ 4V, 1MHz | 2.8 µs | 5 µA @ 400 V | 400 V | 2A | -55°C ~ 150°C | 1.15 V @ 3 A | |
|
|
V12P8-M3/87ADIODE SCHOTTKY 80V 4.3A TO277A Vishay General Semiconductor - Diodes Division |
3,387 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 1 mA @ 80 V | 80 V | 4.3A | -40°C ~ 150°C | 660 mV @ 12 A |
|
|
CGP30-E3/54DIODE GEN PURP 1.4KV 3A DO201AD Vishay General Semiconductor - Diodes Division |
3,200 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 40pF @ 4V, 1MHz | 15 µs | 5 µA @ 1400 V | 1400 V | 3A | -65°C ~ 175°C | 1.2 V @ 3 A |
|
|
VS-90APS16L-M3RECTIFIER DIODE 90A 1600V TO-247 Vishay General Semiconductor - Diodes Division |
2,317 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 100 µA @ 1600 V | 1600 V | 90A | -40°C ~ 150°C | 1.21 V @ 90 A | |
|
|
CS3J-E3/IDIODE GPP 600V 3.0A DO-214AB Vishay General Semiconductor - Diodes Division |
2,600 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 26pF @ 4V, 1MHz | 2.8 µs | 5 µA @ 600 V | 600 V | 2A | -55°C ~ 150°C | 1.15 V @ 3 A | |
|
|
V12P45-M3/86ADIODE SCHOTTKY 45V 4.3A TO277A Vishay General Semiconductor - Diodes Division |
3,633 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 1 mA @ 45 V | 45 V | 4.3A | -40°C ~ 150°C | 580 mV @ 12 A |
|
VS-10TQ045STRLHM3DIODE SCHOTTKY 45V 10A D2PAK Vishay General Semiconductor - Diodes Division |
3,214 | - |
RFQ |
Scheda tecnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 900pF @ 5V, 1MHz | - | 2 mA @ 45 V | 45 V | 10A | -55°C ~ 175°C | 570 mV @ 10 A |
|
|
VS-12TQ045STRL-M3DIODE SCHOTTKY 45V 15A D2PAK Vishay General Semiconductor - Diodes Division |
3,173 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 900pF @ 5V, 1MHz | - | 1.75 mA @ 45 V | 45 V | 15A | -55°C ~ 150°C | 560 mV @ 15 A | |
|
VS-E5TH3012-N3DIODE FREDS 1200V 30A TO-220 Vishay General Semiconductor - Diodes Division |
2,223 | - |
RFQ |
Scheda tecnica |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 113 ns | 50 µA @ 1200 V | 1200 V | 30A | -55°C ~ 175°C | 2.3 V @ 30 A |
|
|
V12P8-M3/86ADIODE SCHOTTKY 80V 4.3A TO277A Vishay General Semiconductor - Diodes Division |
3,786 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 1 mA @ 80 V | 80 V | 4.3A | -40°C ~ 150°C | 660 mV @ 12 A |
|
1N4148-TAPDIODE GEN PURP 75V 300MA DO35 Vishay General Semiconductor - Diodes Division |
5,455 | - |
RFQ |
Scheda tecnica |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 4pF @ 0V, 1MHz | 8 ns | 25 nA @ 20 V | 75 V | 300mA (DC) | -65°C ~ 150°C | 1 V @ 10 mA | |
|
|
1N4151TAPDIODE GEN PURP 50V 150MA DO35 Vishay General Semiconductor - Diodes Division |
7,335 | - |
RFQ |
Scheda tecnica |
Cut Tape (CT),Tape & Box (TB) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Through Hole | 2pF @ 0V, 1MHz | 4 ns | 50 nA @ 50 V | 50 V | 150mA | -65°C ~ 175°C | 1 V @ 50 mA | |
|
1N914TAPDIODE GEN PURP 100V 300MA DO35 Vishay General Semiconductor - Diodes Division |
5,276 | - |
RFQ |
Scheda tecnica |
Cut Tape (CT),Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 4pF @ 0V, 1MHz | 4 ns | 5 µA @ 75 V | 100 V | 300mA | -65°C ~ 175°C | 1 V @ 10 mA |
|
|
1N914TRDIODE GEN PURP 75V 200MA DO35 Vishay General Semiconductor - Diodes Division |
3,602 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Through Hole | 4pF @ 0V, 1MHz | 4 ns | 5 µA @ 75 V | 75 V | 200mA | -55°C ~ 150°C | 1 V @ 10 mA | |
|
LL4448-GS08DIODE GEN PURP 75V 150MA SOD80 Vishay General Semiconductor - Diodes Division |
2,973 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 4pF @ 0V, 1MHz | 8 ns | 5 µA @ 75 V | 100 V | 150mA | -65°C ~ 175°C | 720 mV @ 5 mA |
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