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| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
S16BDIODE GEN PURP 100V 16A DO203AA GeneSiC Semiconductor |
2,793 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 10 µA @ 50 V | 100 V | 16A | -65°C ~ 175°C | 1.1 V @ 16 A | |
|
TSP15U120S S1GDIODE SCHOTTKY 120V 15A TO277A Taiwan Semiconductor Corporation |
3,612 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 250 µA @ 120 V | 120 V | 15A | -55°C ~ 150°C | 750 mV @ 15 A | |
|
JANTX1N5622US/TRSTD RECTIFIER Microchip Technology |
3,683 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/427 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 2 µs | 500 nA @ 1 V | 1000 V | 1A | -65°C ~ 200°C | 1.3 V @ 3 A | |
|
|
JANTX1N6642UDIODE GEN PURP 75V 300MA D5B Microchip Technology |
3,577 | - |
RFQ |
Scheda tecnica |
Bulk | Military, MIL-PRF-19500/578 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 5pF @ 0V, 1MHz | 20 ns | 500 nA @ 75 V | 75 V | 300mA | -65°C ~ 175°C | 1.2 V @ 100 mA |
|
UPS615E3/TR13DIODE SCHOTTKY 15V 6A POWERMITE Microchip Technology |
2,837 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 4 mA @ 15 V | 15 V | 6A | -55°C ~ 150°C | 320 mV @ 6 A | |
|
|
1N7048UR-1SCHOTTKY RECTIFIER Microchip Technology |
3,452 | - |
RFQ |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
|
S16BRDIODE GEN PURP 100V 16A DO220AA GeneSiC Semiconductor |
2,748 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 10 µA @ 50 V | 100 V | 16A | -65°C ~ 175°C | 1.1 V @ 16 A | |
|
|
VS-10ETF06THM3RECTIFIER DIODE 10A 600V TO-220A Vishay General Semiconductor - Diodes Division |
3,386 | - |
RFQ |
Scheda tecnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 200 ns | 100 µA @ 600 V | 600 V | 10A | -40°C ~ 150°C | 1.2 V @ 10 A |
|
|
VS-72HF140DIODE GEN PURP 1.4KV 70A DO203AB Vishay General Semiconductor - Diodes Division |
2,687 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | - | 1400 V | 70A | -65°C ~ 180°C | 1.35 V @ 220 A | |
|
1N6620DIODE GEN PURP 220V 1.2A AXIAL Microchip Technology |
3,277 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 10V, 1MHz | 30 ns | 500 nA @ 220 V | 220 V | 1.2A | -65°C ~ 150°C | 1.4 V @ 1.2 A | |
|
MSR860GDIODE GEN PURP 600V 8A TO220-2 Rochester Electronics, LLC |
2,323 | - |
RFQ |
Scheda tecnica |
Bulk,Tube | SWITCHMODE™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 120 ns | 10 µA @ 600 V | 600 V | 8A | -65°C ~ 150°C | 1.7 V @ 8 A |
|
|
1N7049UR-1SCHOTTKY RECTIFIER Microchip Technology |
3,782 | - |
RFQ |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
|
S16DDIODE GEN PURP 200V 16A DO203AA GeneSiC Semiconductor |
3,943 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 10 µA @ 50 V | 200 V | 16A | -65°C ~ 175°C | 1.1 V @ 16 A | |
|
VS-8TQ100SHM3DIODE SCHOTTKY 100V 8A TO263AB Vishay General Semiconductor - Diodes Division |
2,368 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 500pF @ 5V, 1MHz | - | 550 µA @ 80 V | 100 V | 8A | -55°C ~ 175°C | 720 mV @ 8 A |
|
1N6627USDIODE GEN PURP 440V 1.75A A-MELF Microchip Technology |
2,014 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 40pF @ 10V, 1MHz | 30 ns | 2 µA @ 440 V | 440 V | 1.75A | -65°C ~ 150°C | 1.35 V @ 2 A | |
|
JAN1N6620/TRRECTIFIER UFR,FRR Microchip Technology |
2,962 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Military, MIL-PRF-19500/585 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 10V, 1MHz | 30 ns | 500 nA @ 220 V | 220 V | 2A | -65°C ~ 150°C | 1.6 V @ 2 A |
|
|
VS-10TQ045STRL-M3DIODE SCHOTTKY 45V 10A D2PAK Vishay General Semiconductor - Diodes Division |
2,771 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 900pF @ 5V, 1MHz | - | 2 mA @ 45 V | 45 V | 10A | -55°C ~ 175°C | 570 mV @ 10 A | |
|
|
1N7050UR-1SCHOTTKY RECTIFIER Microchip Technology |
2,968 | - |
RFQ |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
|
S16DRDIODE GEN PURP 200V 16A DO220AA GeneSiC Semiconductor |
2,527 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 10 µA @ 50 V | 200 V | 16A | -65°C ~ 175°C | 1.1 V @ 16 A | |
|
|
FESB16FT-E3/45DIODE GEN PURP 300V 16A TO263AB Vishay General Semiconductor - Diodes Division |
3,730 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 175pF @ 4V, 1MHz | 50 ns | 10 µA @ 300 V | 300 V | 16A | -65°C ~ 150°C | 1.3 V @ 16 A |
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