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Diodi-Raddrizzatori-Singoli

Numero parte produttore	Disponibilità	Prezzo	Quantità	Scheda tecnica	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
R5000GP-TP 0.2AHIGH VOLTAGE SILICON RECTIFI Micro Commercial Co	369	-	RFQ	Scheda tecnica	Tape & Reel (TR),Cut Tape (CT)		RoHS	Small Signal =< 200mA (Io), Any Speed	Standard	Last Time Buy	Through Hole	-	1.2 µs	5 µA @ 5000 V	5000 V	200mA	-55°C ~ 150°C	5 V @ 500 mA
NRVTS10100EMFST1G DIODE SCHOTTKY 100V 10A 5DFN onsemi	2,812	-	RFQ	Scheda tecnica	Tape & Reel (TR),Cut Tape (CT)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	50 µA @ 100 V	100 V	10A	-55°C ~ 175°C	720 mV @ 10 A
SSA34-E3/5AT DIODE SCHOTTKY 40V 3A DO214AC Vishay General Semiconductor - Diodes Division	363	-	RFQ	Scheda tecnica	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	200 µA @ 40 V	40 V	3A	-65°C ~ 150°C	490 mV @ 3 A
NRVB10100MFST1G DIODE SCHOTTKY 100V 10A 5DFN onsemi	3,935	-	RFQ	Scheda tecnica	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	100 µA @ 100 V	100 V	10A	-55°C ~ 175°C	950 mV @ 10 A
CMF04(TE12L,Q,M) DIODE GEN PURP 800V 500MA MFLAT Toshiba Semiconductor and Storage	302	-	RFQ	Scheda tecnica	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	100 ns	50 µA @ 800 V	800 V	500mA	-40°C ~ 150°C	2.5 V @ 500 mA
STPS3L40SY DIODE SCHOTTKY 40V 3A SMC STMicroelectronics	3,240	-	RFQ	Scheda tecnica	Tape & Reel (TR),Cut Tape (CT)	Q Automotive	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	100 µA @ 40 V	40 V	3A	-40°C ~ 150°C	500 mV @ 3 A
STTH102 DIODE GEN PURP 200V 1A DO41 STMicroelectronics	277	-	RFQ	Scheda tecnica	Cut Tape (CT),Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	20 ns	1 µA @ 200 V	200 V	1A	175°C (Max)	970 mV @ 1 A
V30DL45BP-M3/I DIODE SCHOTTKY 45V 30A SMPD Vishay General Semiconductor - Diodes Division	3,648	-	RFQ	Scheda tecnica	Tape & Reel (TR),Cut Tape (CT)	eSMP®, TMBS®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	3 mA @ 45 V	45 V	30A (DC)	-40°C ~ 150°C	650 mV @ 30 A
STPS3170AFN 170 V, 3 A POWER SCHOTTKY RECTIF STMicroelectronics	105	-	RFQ	Scheda tecnica	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	4 µA @ 170 V	170 V	3A	175°C	820 mV @ 3 A
V30DL45-M3/I DIODE SCHOTTKY 45V 30A TO263AC Vishay General Semiconductor - Diodes Division	2,393	-	RFQ	Scheda tecnica	Tape & Reel (TR),Cut Tape (CT)	eSMP®, TMBS®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	3 mA @ 45 V	45 V	30A	-40°C ~ 150°C	650 mV @ 30 A
MBR360RLG DIODE SCHOTTKY 60V 3A DO201AD onsemi	794	-	RFQ	Scheda tecnica	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	600 µA @ 60 V	60 V	3A	-65°C ~ 150°C	740 mV @ 3 A
FSV15120V DIODE SCHOTTKY 120V 15A TO277-3 onsemi	2,247	-	RFQ	Scheda tecnica	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	35 µA @ 120 V	120 V	15A	-55°C ~ 150°C	790 mV @ 15 A
HS1G R3G DIODE GEN PURP 400V 1A DO214AC Taiwan Semiconductor Corporation	567	-	RFQ	Scheda tecnica	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	15pF @ 4V, 1MHz	50 ns	5 µA @ 400 V	400 V	1A	-55°C ~ 150°C	1.3 V @ 1 A
SUR1060 DIODE STANDARD 600V TO220AC SMC Diode Solutions	467	-	RFQ	Scheda tecnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Obsolete	Through Hole	-	50 ns	5 µA @ 600 V	600 V	-	-55°C ~ 150°C	2.2 V @ 10 A
S1JL DIODE GEN PURP 600V 1A SUB SMA Taiwan Semiconductor Corporation	204	-	RFQ	Scheda tecnica	Tape & Reel (TR),Cut Tape (CT)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	9pF @ 4V, 1MHz	1.8 µs	5 µA @ 600 V	600 V	1A	-55°C ~ 175°C	1.1 V @ 1 A
VS-40EPS16-M3 DIODE GEN PURP 1.6KV 40A TO247AC Vishay General Semiconductor - Diodes Division	2,054	-	RFQ	Scheda tecnica	Tube		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	-	100 µA @ 1600 V	1600 V	40A	-40°C ~ 150°C	1.14 V @ 40 A
SS26HE3_A/I DIODE SCHOTTKY 60V 2A DO214AA Vishay General Semiconductor - Diodes Division	166	-	RFQ	Scheda tecnica	Tape & Reel (TR),Cut Tape (CT)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	400 µA @ 60 V	60 V	2A	-65°C ~ 150°C	700 mV @ 2 A
VS-65APS16LHM3 DIODES - TO-247-E3 Vishay General Semiconductor - Diodes Division	3,531	-	RFQ	Scheda tecnica	Tube	Automotive, AEC-Q101	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	-	100 µA @ 1600 V	1600 V	65A	-40°C ~ 150°C	1.17 V @ 65 A
MURS240-E3/52T DIODE GEN PURP 400V 2A DO214AA Vishay General Semiconductor - Diodes Division	236	-	RFQ	Scheda tecnica	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	75 ns	5 µA @ 400 V	400 V	2A	-65°C ~ 175°C	1.45 V @ 2 A
UF27520070A1.T DIODE AVALANCHE 200V 90A DIE SMC Diode Solutions	3,492	-	RFQ	Scheda tecnica	Tray		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Avalanche	Active	Surface Mount	-	70 ns	60 µA @ 200 V	200 V	90A	150°C (Max)	1 V @ 90 A