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| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
VS-3EJH01HM3/6BDIODE GEN PURP 100V 3A DO221AC Vishay General Semiconductor - Diodes Division |
131 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 30 ns | 2 µA @ 100 V | 100 V | 3A | -65°C ~ 175°C | 930 mV @ 3 A |
|
SCS215AGC17DIODE SCHOTTKY 650V 15A TO220AC Rohm Semiconductor |
2,866 | - |
RFQ |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 550pF @ 1V, 1MHz | 0 ns | 300 µA @ 600 V | 650 V | 15A (DC) | 175°C | 1.55 V @ 15 A | ||
|
ES2DHE3_A/IDIODE GEN PURP 200V 2A DO214AA Vishay General Semiconductor - Diodes Division |
120 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 18pF @ 4V, 1MHz | 20 ns | 10 µA @ 200 V | 200 V | 2A | -55°C ~ 150°C | 900 mV @ 2 A |
|
VS-HFA06PB120-N3DIODE GEN PURP 1.2KV 6A TO247AC Vishay General Semiconductor - Diodes Division |
3,854 | - |
RFQ |
Scheda tecnica |
Tube | HEXFRED® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 80 ns | 5 µA @ 1200 V | 1200 V | 6A | -55°C ~ 150°C | 3 V @ 6 A |
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|
BYM13-20-E3/96DIODE SCHOTTKY 20V 1A DO213AB Vishay General Semiconductor - Diodes Division |
118 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 110pF @ 4V, 1MHz | - | 500 µA @ 20 V | 20 V | 1A | -55°C ~ 125°C | 500 mV @ 1 A | |
|
MSC030SDA070BDIODE SCHOTTKY 700V TO-247 Microchip Technology |
2,019 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 1200pF @ 1V, 1MHz | 0 ns | 200 µA @ 700 V | 700 V | 60A (DC) | -55°C ~ 175°C | 1.8 V @ 30 A | |
|
1N5553DIODE GEN PURP 800V 3A AXIAL Microchip Technology |
2,599 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 2 µs | 1 µA @ 800 V | 800 V | 3A | -65°C ~ 175°C | 1.2 V @ 9 A | |
|
C3D10065IDIODE SCHOTTKY 650V 10A TO220-2 Wolfspeed, Inc. |
2,673 | - |
RFQ |
Scheda tecnica |
Tube | Z-Rec® | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 480pF @ 0V, 1MHz | 0 ns | 50 µA @ 650 V | 650 V | 19A (DC) | -55°C ~ 175°C | - |
|
1N2159DO5 40 AMP SILICON RECTFIER Solid State Inc. |
3,700 | - |
RFQ |
Box | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | - | 10 µA @ 500 V | 500 V | 40A | -65°C ~ 200°C | 1.19 V @ 90 A | ||
|
VS-HFA15TB60SR-M3DIODE GEN PURP 600V 15A D2PAK Vishay General Semiconductor - Diodes Division |
3,559 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | HEXFRED® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 60 ns | 10 µA @ 600 V | 600 V | 15A (DC) | -55°C ~ 150°C | 2 V @ 30 A |
|
1N7052UR-1SCHOTTKY RECTIFIER Microchip Technology |
2,579 | - |
RFQ |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
|
S16GRDIODE GEN PURP 400V 16A DO220AA GeneSiC Semiconductor |
2,219 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 10 µA @ 50 V | 400 V | 16A | -65°C ~ 175°C | 1.1 V @ 16 A | |
|
VS-15ETH06HN3DIODE GEN PURP 600V 15A TO220AC Vishay General Semiconductor - Diodes Division |
3,358 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | FRED Pt® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 50 µA @ 600 V | 600 V | 15A | -65°C ~ 175°C | 2.2 V @ 15 A |
|
|
FR30M05DIODE GEN PURP 1KV 30A DO5 GeneSiC Semiconductor |
2,134 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | 500 ns | 25 µA @ 800 V | 1000 V | 30A | -40°C ~ 125°C | 1 V @ 30 A | |
|
JAN1N5616USDIODE GEN PURP 400V 1A D5A Microchip Technology |
2,595 | - |
RFQ |
Scheda tecnica |
Bulk | Military, MIL-PRF-19500/427 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 2 µs | 500 nA @ 400 V | 400 V | 1A | -65°C ~ 200°C | 1.3 V @ 3 A |
|
VS-30ETH06-1-M3DIODE ULTRA FAST 600V 30A TO262 Vishay General Semiconductor - Diodes Division |
2,573 | - |
RFQ |
Scheda tecnica |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 35 ns | 50 µA @ 600 V | 600 V | 30A | -65°C ~ 175°C | 2.6 V @ 30 A |
|
|
1N7053UR-1SCHOTTKY RECTIFIER Microchip Technology |
3,079 | - |
RFQ |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
S16JDIODE GEN PURP 600V 16A DO203AA GeneSiC Semiconductor |
3,677 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 10 µA @ 50 V | 600 V | 16A | -65°C ~ 175°C | 1.1 V @ 16 A | |
|
|
VS-ETL1506STRL-M3DIODE GEN PURP 600V 15A TO263AB Vishay General Semiconductor - Diodes Division |
3,149 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 210 ns | 15 µA @ 600 V | 600 V | 15A | -65°C ~ 175°C | 1.07 V @ 15 A |
|
IDW32G65C5BXKSA2DIODE SCHOTTKY 650V 16A TO247-3 Infineon Technologies |
2,715 | - |
RFQ |
Scheda tecnica |
Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 470pF @ 1V, 1MHz | 0 ns | 200 µA @ 650 V | 650 V | 16A (DC) | -55°C ~ 175°C | 1.7 V @ 16 A |
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