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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SCS220AGC17DIODE SCHOTTKY 650V 20A TO220AC Rohm Semiconductor |
3,002 | - |
RFQ |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 730pF @ 1V, 1MHz | 0 ns | 400 µA @ 600 V | 650 V | 20A (DC) | 175°C | 1.55 V @ 20 A | ||
|
JAN1N5811US/TRRECTIFIER UFR,FRR Microchip Technology |
3,878 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/477 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 60pF @ 10V, 1MHz | 30 ns | 5 µA @ 150 V | 150 V | 6A | -65°C ~ 175°C | 875 mV @ 4 A | |
|
IDM02G120C5XTMA1DIODE SCHOTTKY 1200V 2A TO252-2 Infineon Technologies |
3,595 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT),Bulk | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 182pF @ 1V, 1MHz | 0 ns | 18 µA @ 1200 V | 1200 V | 2A (DC) | -55°C ~ 175°C | 1.65 V @ 2 A |
|
S16KRDIODE GEN PURP 800V 16A DO220AA GeneSiC Semiconductor |
3,632 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 10 µA @ 50 V | 800 V | 16A | -65°C ~ 175°C | 1.1 V @ 16 A | |
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|
VS-65APF12LHM3DIODES - TO-247-E3 Vishay General Semiconductor - Diodes Division |
2,969 | - |
RFQ |
Scheda tecnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 480 ns | 100 µA @ 1200 V | 1200 V | 65A | -40°C ~ 150°C | 1.42 V @ 65 A |
|
VS-ETU1506STRR-M3DIODE GEN PURP 600V 15A TO263AB Vishay General Semiconductor - Diodes Division |
2,525 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 210 ns | 15 µA @ 600 V | 600 V | 15A | -65°C ~ 175°C | 1.07 V @ 15 A |
|
60HFR60DO5 60 AMP SILICON RECTFIER AK Solid State Inc. |
2,764 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | - | 200 µA @ 600 V | 600 V | 60A | -65°C ~ 150°C | 1.3 V @ 60 A | |
|
|
VS-72HFR160DIODE GEN PURP 1.6KV 70A DO203AB Vishay General Semiconductor - Diodes Division |
3,729 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | - | 1600 V | 70A | -65°C ~ 150°C | 1.46 V @ 220 A | |
|
VS-65EPF06LHM3DIODES - TO-247-E3 Vishay General Semiconductor - Diodes Division |
2,060 | - |
RFQ |
Scheda tecnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 180 ns | 100 µA @ 600 V | 600 V | 65A | -40°C ~ 150°C | 1.32 V @ 65 A |
|
|
1N6638US/TRSWITCHING Microchip Technology |
3,072 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 2.5pF @ 0V, 1MHz | 20 ns | 500 nA @ 125 V | 125 V | 300mA | -65°C ~ 175°C | 1.1 V @ 200 mA | |
|
IDK02G120C5XTMA1SIC DISCRETE Infineon Technologies |
781 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 182pF @ 1V, 1MHz | - | 18 µA @ 1200 V | 1200 V | 11.8A (DC) | -55°C ~ 175°C | 1.65 V @ 2 A | |
|
FMX-1106SDIODE GEN PURP 600V 10A TO220F Sanken |
3,671 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 30 ns | 50 µA @ 600 V | 600 V | 10A | -40°C ~ 150°C | 1.5 V @ 5 A | |
|
VS-25F80DIODE GEN PURP 800V 25A DO203AA Vishay General Semiconductor - Diodes Division |
2,678 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 12 mA @ 800 V | 800 V | 25A | -65°C ~ 175°C | 1.3 V @ 78 A | |
|
|
1N6677UR-1RECTIFIER DIODE Microchip Technology |
2,172 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
BY6Std Rect, 6000V, 1A DComponents |
3,427 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 1.5 µs | 1 µA @ 6000 V | 6000 V | 1A | -50°C ~ 150°C | 6 V @ 1 A | |
|
|
S16MDIODE GEN PURP 1KV 16A DO203AA GeneSiC Semiconductor |
3,643 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 10 µA @ 50 V | 1000 V | 16A | -65°C ~ 175°C | 1.1 V @ 16 A | |
|
STTH1506DPIDIODE GEN PURP 600V 15A DOP3I STMicroelectronics |
3,393 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 35 ns | 20 µA @ 600 V | 600 V | 15A | 150°C (Max) | 3.6 V @ 15 A | |
|
|
1N2129ADO5 70 AMP SILICON RECTIFIER Solid State Inc. |
100 | - |
RFQ |
Box | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | - | 25 µA @ 100 V | 100 V | 70A | -65°C ~ 200°C | 1.25 V @ 200 A | ||
|
C4D10120E-TRDIODE SCHOTTKY 1.2KV 33A TO252-2 Wolfspeed, Inc. |
2,785 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Z-Rec® | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 754pF @ 0V, 1MHz | 0 ns | 250 µA @ 1200 V | 1200 V | 33A (DC) | -55°C ~ 175°C | 1.8 V @ 10 A |
|
|
1N2131RDO5 70 AMP SILICON RECTIFIER Solid State Inc. |
2,941 | - |
RFQ |
Box | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Stud Mount | - | - | 25 µA @ 200 V | 200 V | 70A | -65°C ~ 200°C | 1.25 V @ 200 A |
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