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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VS-ETX1506STRR-M3DIODE GEN PURP 600V 15A TO263AB Vishay General Semiconductor - Diodes Division |
3,814 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 20 ns | 36 µA @ 600 V | 600 V | 15A | -65°C ~ 175°C | 3.4 V @ 15 A |
|
JAN1N5802D MET 2.5A SFST 50V TRR 25NS HR Semtech Corporation |
3,216 | - |
RFQ |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
1N6638U/TRSIGNAL/COMPUTER DIODE Microchip Technology |
2,639 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/578 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 2.5pF @ 0V, 1MHz | 4.5 ns | 500 nA @ 150 V | 125 V | 300mA (DC) | -65°C ~ 175°C | 1.1 V @ 200 mA | |
|
|
VB30100S-M3/4WDIODE SCHOTTKY 30A 100V TO-263AB Vishay General Semiconductor - Diodes Division |
3,546 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 1 mA @ 100 V | 100 V | 30A | -40°C ~ 150°C | 910 mV @ 30 A | |
|
|
JAN1N5419USDIODE GEN PURP 500V 3A D5B Microchip Technology |
3,812 | - |
RFQ |
Scheda tecnica |
Bulk | Military, MIL-PRF-19500/411 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 250 ns | 1 µA @ 500 V | 500 V | 3A | -65°C ~ 175°C | 1.5 V @ 9 A |
|
S16QDIODE GEN PURP 1.2KV 16A DO203AA GeneSiC Semiconductor |
2,422 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 10 µA @ 50 V | 1200 V | 16A | -65°C ~ 175°C | 1.1 V @ 16 A | |
|
UGF8JTHE3_A/PDIODE GEN PURP 600V 8A ITO220AC Vishay General Semiconductor - Diodes Division |
2,675 | - |
RFQ |
Scheda tecnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 30 µA @ 600 V | 600 V | 8A | -55°C ~ 150°C | 1.75 V @ 8 A |
|
|
JAN1N5804D MET 2.5A SFST 100V HR Semtech Corporation |
2,110 | - |
RFQ |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
VS-40HF140DIODE GEN PURP 1.4KV 40A DO203AB Vishay General Semiconductor - Diodes Division |
2,526 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 4.5 mA @ 1400 V | 1400 V | 40A | -65°C ~ 160°C | 1.5 V @ 125 A | |
|
|
VS-8TQ080STRR-M3DIODE SCHOTTKY 80V 8A TO263AB Vishay General Semiconductor - Diodes Division |
2,297 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 500pF @ 5V, 1MHz | - | 550 µA @ 80 V | 80 V | 8A | -55°C ~ 175°C | 720 mV @ 8 A | |
|
CDLL5819E3/TRDIODE SMALL-SIGNAL SCHOTTKY Microchip Technology |
3,909 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 70pF @ 5V, 1MHz | - | 50 µA @ 45 V | 45 V | 1A | -65°C ~ 125°C | 490 mV @ 1 A | |
|
|
S16QRDIODE GEN PURP 1.2KV 16A DO220AA GeneSiC Semiconductor |
2,652 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 10 µA @ 50 V | 1200 V | 16A | -65°C ~ 175°C | 1.1 V @ 16 A | |
|
VS-HFA04SD60SLHM3DIODE GEN PURP 600V 4A TO252 Vishay General Semiconductor - Diodes Division |
3,536 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 42 ns | 3 µA @ 600 V | 600 V | 4A | -65°C ~ 175°C | 1.8 V @ 4 A |
|
|
JAN1N5806D MET 6A SFST 50V Semtech Corporation |
3,722 | - |
RFQ |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
FJH1101DIODE GEN PURP 15V 150MA DO35 onsemi |
4,930 | - |
RFQ |
Scheda tecnica |
Bulk,Bulk | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Through Hole | 2pF @ 0V, 1MHz | - | 15 pA @ 15 V | 15 V | 150mA (DC) | 175°C (Max) | 1.1 V @ 50 mA | |
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STPSC2H065BY-TRDFD THYR TRIAC & RECTIFIER STMicroelectronics |
2,001 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101, ECOPACK®2 | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 135pF @ 0V, 1MHz | 0 ns | 20 µA @ 650 V | 650 V | 2A | -40°C ~ 175°C | 1.55 V @ 2 A | |
|
|
JANTX1N6640US/TRSWITCHING Microchip Technology |
2,839 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/609 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 4 ns | 100 nA @ 50 V | 50 V | 300mA | -65°C ~ 175°C | 1 V @ 200 mA | |
|
|
1N5806/TRUFR,FRR Microchip Technology |
2,191 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 25pF @ 10V, 1MHz | 25 ns | 1 µA @ 150 V | 150 V | 2.5A | -65°C ~ 175°C | 975 mV @ 2.5 A | |
|
|
VS-HFA04SD60SRHM3DIODE GEN PURP 600V 4A TO252 Vishay General Semiconductor - Diodes Division |
2,440 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 42 ns | 3 µA @ 600 V | 600 V | 4A | -65°C ~ 175°C | 1.8 V @ 4 A |
|
|
1N5614DIODE GEN PURP 200V 2A AXIAL Semtech Corporation |
3,627 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 23pF @ 5V, 1MHz | 2 µs | 500 nA @ 200 V | 200 V | 2A | -65°C ~ 175°C | 1.1 V @ 1 A |
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