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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
FESF16CT-E3/45DIODE GEN PURP 150V 16A ITO220AC Vishay General Semiconductor - Diodes Division |
2,498 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 35 ns | 10 µA @ 150 V | 150 V | 16A | -65°C ~ 150°C | 975 mV @ 16 A | |
|
SD175SB45B.T2PIV 45V IO 30A CHIP SIZE 175MIL SMC Diode Solutions |
2,430 | - |
RFQ |
Tray | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 1600pF @ 5V, 1MHz | - | 800 µA @ 45 V | 45 V | 30A | -55°C ~ 175°C | 640 mV @ 30 A | ||
|
SR805DIODE SCHOTTKY 8A 50V DO-201AD Taiwan Semiconductor Corporation |
2,657 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 50 V | 50 V | 8A (DC) | -55°C ~ 150°C | 700 mV @ 8 A | ||
|
SE70PG-M3/87ADIODE GEN PURP 400V 2.9A TO277A Vishay General Semiconductor - Diodes Division |
3,993 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 76pF @ 4V, 1MHz | 2.6 µs | 20 µA @ 100 V | 400 V | 2.9A (DC) | -55°C ~ 175°C | 1.05 V @ 7 A | |
|
VS-MURB820TRRHM3DIODE GEN PURP 200V 8A TO263 Vishay General Semiconductor - Diodes Division |
3,997 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 35 ns | 5 µA @ 200 V | 200 V | 8A | -55°C ~ 175°C | 975 mV @ 8 A |
|
|
UFS350GE3/TR13DIODE GEN PURP 500V 3A DO215AB Microchip Technology |
2,002 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 10 µA @ 500 V | 500 V | 3A | -55°C ~ 175°C | 1.1 V @ 3 A | |
|
|
FESF16FT-E3/45DIODE GEN PURP 300V 16A ITO220AC Vishay General Semiconductor - Diodes Division |
2,021 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 10 µA @ 300 V | 300 V | 16A | -65°C ~ 150°C | 1.3 V @ 16 A | |
|
FFPF08S60STTUDIODE GEN PURP 600V 8A TO220F-2L onsemi |
2,463 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 30 ns | 100 µA @ 600 V | 600 V | 8A | -65°C ~ 150°C | 2.6 V @ 8 A | |
|
|
RG 10AV1DIODE GEN PURP 600V 1A AXIAL Sanken |
2,100 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 100 ns | 500 µA @ 600 V | 600 V | 1A | -40°C ~ 150°C | 2 V @ 1 A | |
|
|
SE70PJ-M3/87ADIODE GEN PURP 600V 2.9A TO277A Vishay General Semiconductor - Diodes Division |
2,438 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 76pF @ 4V, 1MHz | 2.6 µs | 20 µA @ 100 V | 600 V | 2.9A (DC) | -55°C ~ 175°C | 1.05 V @ 7 A | |
|
MBR30H100MFST3GDIODE SCHOTTKY 100V 30A 5DFN onsemi |
3,887 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 100 V | 100 V | 30A | -55°C ~ 150°C | 900 mV @ 30 A | |
|
|
UFS360GE3/TR13DIODE GEN PURP 600V 3A DO215AB Microchip Technology |
2,121 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 60 ns | 10 µA @ 600 V | 600 V | 3A | -55°C ~ 175°C | 1.2 V @ 3 A | |
|
|
FESF16FTHE3_A/PDIODE GEN PURP 300V 16A ITO220AC Vishay General Semiconductor - Diodes Division |
2,945 | - |
RFQ |
Scheda tecnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 10 µA @ 300 V | 300 V | 16A | -65°C ~ 150°C | 1.3 V @ 16 A |
|
|
RFN10TF6SC9FAST RECOVERY DIODE : ROHM'S FAS Rohm Semiconductor |
2,364 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 10 µA @ 600 V | 600 V | 10A | 150°C | 1.55 V @ 10 A | ||
|
|
RG 2AV1DIODE GEN PURP 600V 1A AXIAL Sanken |
2,984 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 100 ns | 500 µA @ 600 V | 600 V | 1A | -40°C ~ 150°C | 2 V @ 1 A | |
|
|
SE70PB-M3/86ADIODE GEN PURP 100V 2.9A TO277A Vishay General Semiconductor - Diodes Division |
3,826 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 76pF @ 4V, 1MHz | 2.6 µs | 20 µA @ 100 V | 100 V | 2.9A (DC) | -55°C ~ 175°C | 1.05 V @ 7 A | |
|
DSTF30100SDIODE SCHOTTKY 30A 100V ITO220AB Littelfuse Inc. |
2,179 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 1 µA @ 100 V | 100 V | 30A | -55°C ~ 150°C | 900 mV @ 30 A | |
|
|
UFS370GE3/TR13DIODE GEN PURP 700V 3A DO215AB Microchip Technology |
3,418 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 60 ns | 10 µA @ 700 V | 700 V | 3A | -55°C ~ 175°C | 1.2 V @ 3 A | |
|
|
FESF16GT-E3/45DIODE GEN PURP 400V 16A ITO220AC Vishay General Semiconductor - Diodes Division |
2,554 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 10 µA @ 400 V | 400 V | 16A | -65°C ~ 150°C | 1.3 V @ 16 A | |
|
|
RM 10BV1DIODE GEN PURP 800V 1.2A AXIAL Sanken |
2,516 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 10 µA @ 800 V | 800 V | 1.2A | -40°C ~ 150°C | 910 mV @ 1.5 A |
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