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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SE70PD-M3/86ADIODE GEN PURP 200V 2.9A TO277A Vishay General Semiconductor - Diodes Division |
2,918 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 76pF @ 4V, 1MHz | 2.6 µs | 20 µA @ 200 V | 200 V | 2.9A (DC) | -55°C ~ 175°C | 1.05 V @ 7 A | |
|
SFAF1004G C0GDIODE GEN PURP 200V 10A ITO220AC Taiwan Semiconductor Corporation |
3,042 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 170pF @ 4V, 1MHz | 35 ns | 10 µA @ 200 V | 200 V | 10A | -55°C ~ 150°C | 975 mV @ 10 A | |
|
UFS380GE3/TR13DIODE GEN PURP 800V 3A DO215AB Microchip Technology |
2,457 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 60 ns | 10 µA @ 800 V | 800 V | 3A | -55°C ~ 175°C | 1.2 V @ 3 A | |
|
FESF16GTHE3_A/PDIODE GEN PURP 400V 16A ITO220AC Vishay General Semiconductor - Diodes Division |
3,159 | - |
RFQ |
Scheda tecnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 10 µA @ 400 V | 400 V | 16A | -65°C ~ 150°C | 1.3 V @ 16 A |
|
|
RU 2AMV1DIODE GEN PURP 600V 1.1A AXIAL Sanken |
2,424 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 400 ns | 10 µA @ 600 V | 600 V | 1.1A | -40°C ~ 150°C | 1.2 V @ 1.1 A | |
|
|
SE70PG-M3/86ADIODE GEN PURP 400V 2.9A TO277A Vishay General Semiconductor - Diodes Division |
2,645 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 76pF @ 4V, 1MHz | 2.6 µs | 20 µA @ 400 V | 400 V | 2.9A (DC) | -55°C ~ 175°C | 1.05 V @ 7 A | |
|
VS-30WQ04FNHM3DIODE SCHOTTKY DPAK Vishay General Semiconductor - Diodes Division |
3,949 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 189pF @ 5V, 1MHz | - | 2 mA @ 40 V | 40 V | 3.5A | -40°C ~ 150°C | 530 mV @ 3 A |
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|
5822SMJE3/TR13DIODE SCHOTTKY 40V 3A SMCJ Microchip Technology |
3,813 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 1.5 mA @ 40 V | 40 V | 3A | -55°C ~ 150°C | 500 mV @ 3 A | ||
|
|
FESF16HTHE3_A/PDIODE GEN PURP 500V 16A ITO220AC Vishay General Semiconductor - Diodes Division |
3,215 | - |
RFQ |
Scheda tecnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 10 µA @ 500 V | 500 V | 16A | -65°C ~ 150°C | 1.5 V @ 16 A |
|
|
RU 3BV1DIODE GEN PURP 800V 1.1A AXIAL Sanken |
2,637 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 400 ns | 10 µA @ 600 V | 800 V | 1.1A | -40°C ~ 150°C | 1.5 V @ 1 A | |
|
|
SE70PJ-M3/86ADIODE GEN PURP 600V 2.9A TO277A Vishay General Semiconductor - Diodes Division |
3,541 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 76pF @ 4V, 1MHz | 2.6 µs | 20 µA @ 600 V | 600 V | 2.9A (DC) | -55°C ~ 175°C | 1.05 V @ 7 A | |
|
|
VS-30WQ04FNTRHM3DIODE SCHOTTKY DPAK Vishay General Semiconductor - Diodes Division |
3,795 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 189pF @ 5V, 1MHz | - | 2 mA @ 40 V | 40 V | 3.5A | -40°C ~ 150°C | 530 mV @ 3 A |
|
VS-10ETF04-M3DIODE GEN PURP 400V 10A TO220AC Vishay General Semiconductor - Diodes Division |
2,352 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 200 ns | 100 µA @ 400 V | 400 V | 10A | -45°C ~ 150°C | 1.2 V @ 10 A | |
|
JAN1N914UR/TRSIGNAL/COMPUTER DIODE Microchip Technology |
2,376 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/116 | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 4pF @ 0V, 1MHz | 20 ns | 500 nA @ 75 V | 75 V | 200mA | -65°C ~ 175°C | 1.2 V @ 50 mA | |
|
|
RU 3CV1DIODE GEN PURP 1KV 1.5A AXIAL Sanken |
2,822 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 400 ns | 10 µA @ 1000 V | 1000 V | 1.5A | -40°C ~ 150°C | 2 V @ 1.5 A | |
|
|
VT5200-E3/4WDIODE SCHOTTKY 5A 200V TO-220AC Vishay General Semiconductor - Diodes Division |
2,983 | - |
RFQ |
Scheda tecnica |
Tube | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 150 µA @ 200 V | 200 V | 5A | -40°C ~ 150°C | 1.6 V @ 5 A |
|
|
FESF16JTHE3_A/PDIODE GEN PURP 600V 16A ITO220AC Vishay General Semiconductor - Diodes Division |
2,447 | - |
RFQ |
Scheda tecnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 10 µA @ 600 V | 600 V | 16A | -65°C ~ 150°C | 1.5 V @ 16 A |
|
|
VS-30WQ04FNTRLHM3DIODE SCHOTTKY DPAK Vishay General Semiconductor - Diodes Division |
3,287 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 189pF @ 5V, 1MHz | - | 2 mA @ 40 V | 40 V | 3.5A | -40°C ~ 150°C | 530 mV @ 3 A |
|
|
VS-10ETF12-M3DIODE GEN PURP 1.2KV 10A TO220AC Vishay General Semiconductor - Diodes Division |
3,092 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 310 ns | 100 µA @ 1200 V | 1200 V | 10A | -40°C ~ 150°C | 1.33 V @ 10 A | |
|
1N4245/TRRECTIFIER UFR,FRR Microchip Technology |
3,600 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 5 µs | 1 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1.3 V @ 3 A |
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