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| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
JANTXV1N6640US/TRSIGNAL/COMPUTER DIODE Microchip Technology |
3,349 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/609 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 4 ns | 90 µA @ 50 V | 50 V | 300mA | -65°C ~ 175°C | 1 V @ 200 mA | |
|
VS-50WQ04FNTRHM3DIODE SCHOTTKY 40V 5.5A DPAK Vishay General Semiconductor - Diodes Division |
2,465 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 405pF @ 5V, 1MHz | - | 3 mA @ 40 V | 40 V | 5.5A | -40°C ~ 150°C | 510 mV @ 5 A |
|
JAN1N6631DIODE GEN PURP 1.1KV 1.4A AXIAL Microchip Technology |
2,277 | - |
RFQ |
Scheda tecnica |
Bulk | Military, MIL-PRF-19500/590 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 60 ns | 2 µA @ 1000 V | 1100 V | 1.4A | -65°C ~ 175°C | 1.6 V @ 1 A |
|
|
VS-HFA04SD60SR-M3DIODE GEN PURP 600V 4A TO252 Vishay General Semiconductor - Diodes Division |
3,991 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 42 ns | 3 µA @ 600 V | 600 V | 4A | -65°C ~ 175°C | 1.8 V @ 4 A |
|
|
FR20BR02DIODE GEN PURP REV 100V 20A DO5 GeneSiC Semiconductor |
3,123 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | 200 ns | 25 µA @ 50 V | 100 V | 20A | -40°C ~ 125°C | 1 V @ 20 A | |
|
|
1N5418E3/TRRECTIFIER UFR,FRR Microchip Technology |
3,642 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 150 ns | 1 µA @ 400 V | 400 V | 3A | -65°C ~ 175°C | 1.5 V @ 9 A | |
|
JANTXV1N5553DIODE GEN PURP 800V 5A AXIAL Microchip Technology |
2,840 | - |
RFQ |
Scheda tecnica |
Bulk | Military, MIL-PRF-19500/420 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 2 µs | 1 µA @ 800 V | 800 V | 5A | -65°C ~ 175°C | 1.3 V @ 9 A |
|
MBR1050DIODE SCHOTTKY 50V 10A TO220AC onsemi |
3,277 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 50 V | 50 V | 10A | -65°C ~ 150°C | 800 mV @ 10 A | |
|
JANTXV1N5616DIODE GEN PURP 400V 1A AXIAL Microchip Technology |
3,862 | - |
RFQ |
Scheda tecnica |
Bulk | Military, MIL-PRF-19500/427 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 2 µs | 500 nA @ 400 V | 400 V | 1A | -65°C ~ 200°C | 1.3 V @ 3 A |
|
|
VS-HFA04SD60STR-M3DIODE GEN PURP 600V 4A D-PAK Vishay General Semiconductor - Diodes Division |
3,479 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | HEXFRED® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 42 ns | 3 µA @ 600 V | 600 V | 4A | -55°C ~ 150°C | 1.8 V @ 4 A |
|
|
FR20DR02DIODE GEN PURP REV 200V 20A DO5 GeneSiC Semiconductor |
3,810 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | 200 ns | 25 µA @ 50 V | 200 V | 20A | -40°C ~ 125°C | 1 V @ 20 A | |
|
JAN1N5420/TRRECTIFIER UFR,FRR Microchip Technology |
2,613 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Military, MIL-PRF-19500/411 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 400 ns | 1 µA @ 600 V | 600 V | 3A | -65°C ~ 175°C | 1.5 V @ 9 A |
|
|
GKN71/16DIODE GEN PURP 1.6KV 95A DO5 GeneSiC Semiconductor |
3,636 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 10 mA @ 1600 V | 1600 V | 95A | -40°C ~ 180°C | 1.5 V @ 60 A | |
|
|
RURP1560-F085PUFR TO220 15A 600V AUTO onsemi |
2,338 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 70 ns | 100 µA @ 600 V | 600 V | 15A | -55°C ~ 175°C | 1.5 V @ 15 A | |
|
|
JAN1N6630DIODE GEN PURP 900V 1.4A AXIAL Microchip Technology |
2,784 | - |
RFQ |
Scheda tecnica |
Bulk | Military, MIL-PRF-19500/590 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 2 µA @ 900 V | 900 V | 1.4A | -65°C ~ 150°C | 1.4 V @ 1.4 A |
|
|
NRTS30100MFST3G100V30A TRENCH SCHOTTKY onsemi |
2,906 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 2540pF @ 1V, 1MHz | - | 100 µA @ 100 V | 100 V | 30A (DC) | -55°C ~ 175°C | 760 mV @ 30 A | |
|
|
FR20JR02DIODE GEN PURP REV 600V 20A DO5 GeneSiC Semiconductor |
2,176 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | 250 ns | 25 µA @ 50 V | 600 V | 20A | -40°C ~ 125°C | 1 V @ 20 A | |
|
VS-1N1184ADIODE GEN PURP 100V 40A DO203AB Vishay General Semiconductor - Diodes Division |
3,603 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 2.5 mA @ 100 V | 100 V | 40A | -65°C ~ 200°C | 1.3 V @ 126 A | |
|
|
JANTXV1N5623USDIODE GEN PURP 1KV 1A D5A Microchip Technology |
2,164 | - |
RFQ |
Scheda tecnica |
Bulk | Military, MIL-PRF-19500/429 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 12V, 1MHz | 500 ns | 500 nA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | 1.6 V @ 3 A |
|
DSS10-01AS-TRLDIODE SCHOTTKY 100V 10A TO263AB IXYS |
2,292 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 300 µA @ 100 V | 100 V | 10A | -55°C ~ 175°C | 840 mV @ 10 A |
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