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| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N6857UR-1SCHOTTKY RECTIFIER Microchip Technology |
3,197 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
JANTX1N5614USDIODE GEN PURP 200V 1A D5A Microchip Technology |
2,982 | - |
RFQ |
Scheda tecnica |
Bulk | Military, MIL-PRF-19500/437 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 2 µs | 500 nA @ 200 V | 200 V | 1A | -65°C ~ 200°C | 1.3 V @ 3 A |
|
FFSH30120A-F155SIC DIODE GEN1.0 TO247-2L LL onsemi |
3,321 | - |
RFQ |
Scheda tecnica |
Tray | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 1740pF @ 1V, 100kHz | 0 ns | 200 µA @ 1200 V | 1200 V | 46A (DC) | -55°C ~ 175°C | 1.75 V @ 30 A | |
|
1N4149DIODE GEN PURP 75V 200MA DO35 Microchip Technology |
3,658 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Through Hole | - | 4 ns | 20 nA @ 20 V | 75 V | 200mA | -65°C ~ 150°C | 1 V @ 10 mA | |
|
|
PU2BLWH25NS, 2A, 100V, ULTRA FAST RECOV Taiwan Semiconductor Corporation |
2,948 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 33pF @ 4V, 1MHz | 25 ns | 2 µA @ 100 V | 100 V | 2A (DC) | -55°C ~ 175°C | 930 mV @ 2 A | |
|
BAT54W-G3-08DIODE SCHOTTKY 30V 200MA SOD123 Vishay General Semiconductor - Diodes Division |
2,580 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 10pF @ 1V, 1MHz | 5 ns | 2 µA @ 25 V | 30 V | 200mA (DC) | 125°C (Max) | 800 mV @ 100 mA | |
|
|
SX35_R1_00001SURFACE MOUNT SCHOTTKY BARRIER R Panjit International Inc. |
2,058 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 50 V | 50 V | 3A | -55°C ~ 150°C | 750 mV @ 3 A | ||
|
NSD914XV2T1GDIODE GEN PURP 100V 200MA SOD523 onsemi |
2,547 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT),Bulk | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 4pF @ 0V, 1MHz | 4 ns | 5 µA @ 75 V | 100 V | 200mA (DC) | -55°C ~ 150°C | 1 V @ 10 mA | |
|
|
ER1G_R1_00001SURFACE MOUNT SUPER FAST RECOVER Panjit International Inc. |
2,562 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 35 ns | 1 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.25 V @ 1 A | ||
|
RF05VYM2SFHTRSUPER FAST RECOVERY DIODES (CORR Rohm Semiconductor |
3,170 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 10 µA @ 200 V | 200 V | 500mA | 150°C (Max) | 980 mV @ 500 mA |
|
|
ER1E_R1_00001SURFACE MOUNT SUPER FAST RECOVER Panjit International Inc. |
2,163 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 35 ns | 1 µA @ 300 V | 300 V | 1A | -55°C ~ 150°C | 1.25 V @ 1 A | ||
|
SD107WS-TPDIODE SCHOTTKY 30V 100MA SOD323 Micro Commercial Co |
3,303 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 7pF @ 10V, 1MHz | - | 1 µA @ 25 V | 30 V | 100mA | -55°C ~ 150°C | 800 mV @ 100 mA | |
|
BAS40HYT11640V, 120MA, SOT-23, SINGLE, SCHO Rohm Semiconductor |
2,029 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | - | - | 10 µA @ 40 V | 40 V | 120mA (DC) | 150°C | 1 V @ 40 mA | |
|
1SS403,H3FDIODE GEN PURP 200V 100MA USC Toshiba Semiconductor and Storage |
2,235 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 3pF @ 0V, 1MHz | 60 ns | 1 µA @ 200 V | 200 V | 100mA | 125°C (Max) | 1.2 V @ 100 mA | |
|
|
UF2JF_R1_00001SURFACE MOUNT ULTRA FAST RECTIFI Panjit International Inc. |
3,086 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 18pF @ 4V, 1MHz | 100 ns | 1 µA @ 600 V | 600 V | 2A | -55°C ~ 150°C | 1.7 V @ 2 A | ||
|
NRVUS1MFADIODE GEN PURP 1A1000V SOD123-2 onsemi |
2,728 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 75 ns | 5 µA @ 1000 V | 1000 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
S2JTRDIODE GEN PURP 600V 2A SMB SMC Diode Solutions |
53,875 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 30pF @ 4V, 1MHz | 2.5 µs | 5 µA @ 600 V | 600 V | 2A | -55°C ~ 150°C | 1.1 V @ 2 A | |
|
|
NRVUS1GFADIODE GEN PURP 1A 400V SOD123-2 onsemi |
2,383 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 50 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
|
CDBUR0230LDIODE SCHOTTKY 30V 200MA 0603 Comchip Technology |
3,728 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | - | - | 30 µA @ 10 V | 30 V | 200mA | 125°C (Max) | 500 mV @ 200 mA | |
|
PMEG100T20ELR-QXPMEG100T20ELR-Q/SOD123W/SOD2 Nexperia USA Inc. |
2,815 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 200pF @ 1V, 1MHz | 12 ns | 1.25 µA @ 100 V | 100 V | 2A | 175°C | 800 mV @ 2 A |
- 1500+ Media giornaliera RFQ
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