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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
127SPC020ADIODE SCHOTTKY 20V 120A SPD-3A SMC Diode Solutions |
3,714 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 8100pF @ 5V, 1MHz | - | 12 mA @ 20 V | 20 V | 120A | -55°C ~ 150°C | 480 mV @ 120 A | |
|
JANTXV1N5552US/TRSTD RECTIFIER Microchip Technology |
2,727 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/420 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 2 µs | 1 µA @ 600 V | 600 V | 3A | -65°C ~ 175°C | 1.2 V @ 9 A | |
|
BYV26B-TAPDIODE AVALANCHE 400V 1A SOD57 Vishay General Semiconductor - Diodes Division |
3,931 | - |
RFQ |
Scheda tecnica |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 30 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 175°C | 2.5 V @ 1 A | |
|
RURDG1540ULTRAFAST DIODE Rochester Electronics, LLC |
3,622 | - |
RFQ |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
UG4D-E3/54DIODE GEN PURP 200V 4A DO201AD Vishay General Semiconductor - Diodes Division |
2,316 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 30 ns | 5 µA @ 200 V | 200 V | 4A | -55°C ~ 150°C | 950 mV @ 4 A | |
|
HERAF1606G C0GDIODE GEN PURP 600V 16A ITO220AC Taiwan Semiconductor Corporation |
2,716 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 110pF @ 4V, 1MHz | 80 ns | 10 µA @ 600 V | 600 V | 16A | -55°C ~ 150°C | 1.7 V @ 16 A | |
|
STPS4S200SDIODE SCHOTTKY 200V 4A SMC STMicroelectronics |
4,910 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 5 µA @ 200 V | 200 V | 4A | 175°C (Max) | 870 mV @ 4 A | |
|
IDP30E65D2XKSA1DIODE GEN PURP 650V 60A TO220-2 Infineon Technologies |
2,630 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 42 ns | 40 µA @ 650 V | 650 V | 60A (DC) | -40°C ~ 175°C | 2.2 V @ 30 A | |
|
STTH2L06ADIODE GEN PURP 600V 2A SMA STMicroelectronics |
3,005 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 85 ns | 2 µA @ 600 V | 600 V | 2A | 175°C (Max) | 1.3 V @ 2 A | |
|
|
UGS30JH50NS, 30A, 600V, HIGH EFFICIENT Taiwan Semiconductor Corporation |
3,131 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 128pF @ 4V, 1MHz | 50 ns | 1 µA @ 600 V | 600 V | 30A (DC) | -55°C ~ 150°C | 2 V @ 30 A | |
|
ES1JL R3GDIODE GEN PURP 600V 1A SUB SMA Taiwan Semiconductor Corporation |
2,643 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | 35 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
DLA20IM800PC-TUBDIODE GEN PURP 800V 20A TO263 IXYS |
3,819 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 400V, 1MHz | - | 10 µA @ 800 V | 800 V | 20A | -55°C ~ 175°C | 1.2 V @ 20 A | |
|
STPS4S200UFDIODE SCHOTTKY 200V 4A SMBFLAT STMicroelectronics |
3,169 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | ECOPACK® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 5 µA @ 200 V | 200 V | 4A | -40°C ~ 175°C | 870 mV @ 4 A |
|
|
PCDB0865G1_T0_00001650V SIC SCHOTTKY BARRIER DIODE Panjit International Inc. |
2,385 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 296pF @ 1V, 1MHz | 0 ns | 60 µA @ 650 V | 650 V | 8A (DC) | -55°C ~ 175°C | 1.7 V @ 8 A | ||
|
VS-20ETF02STRR-M3DIODE GEN PURP 200V 20A TO263AB Vishay General Semiconductor - Diodes Division |
2,495 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 160 ns | 100 µA @ 200 V | 200 V | 20A | -40°C ~ 150°C | 1.3 V @ 20 A | |
|
PMEG100V060ELPDZDIODE SCHOTTKY 100V 6A CFP15 Nexperia USA Inc. |
2,418 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 200pF @ 1V, 1MHz | 8 ns | 450 nA @ 100 V | 100 V | 6A | 175°C (Max) | 840 mV @ 6 A |
|
1N5300UR-1/TRCURRENT REGULATOR Microchip Technology |
2,291 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | - | - | Active | Surface Mount | - | - | - | - | - | - | - | |
|
|
PCDD0865G1_L2_00001650V SIC SCHOTTKY BARRIER DIODE Panjit International Inc. |
2,938 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 296pF @ 1V, 1MHz | 0 ns | 60 µA @ 650 V | 650 V | 8A (DC) | -55°C ~ 175°C | 1.7 V @ 8 A | ||
|
V8PM15-M3/HDIODE SCHOTTKY 8A 150V SMPC Vishay General Semiconductor - Diodes Division |
3,434 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 460pF @ 4V, 1MHz | - | 150 µA @ 150 V | 150 V | 8A | -40°C ~ 175°C | 1.08 V @ 8 A |
|
VS-20ETF06FP-M3DIODE GEN PURP 600V 20A TO220FP Vishay General Semiconductor - Diodes Division |
3,973 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 160 ns | 100 µA @ 600 V | 600 V | 20A | -40°C ~ 150°C | 1.67 V @ 60 A |
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