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| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
JANTXV1N5809USDIODE GEN PURP 100V 3A B-MELF Microchip Technology |
3,635 | - |
RFQ |
Scheda tecnica |
Bulk | Military, MIL-PRF-19500/477 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 60pF @ 10V, 1MHz | 30 ns | 5 µA @ 100 V | 100 V | 3A | -65°C ~ 175°C | 875 mV @ 4 A |
|
|
VS-87HFR40DIODE GEN PURP 400V 85A DO203AB Vishay General Semiconductor - Diodes Division |
2,566 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | - | 400 V | 85A | -65°C ~ 180°C | 1.2 V @ 267 A | |
|
|
1N4248DIODE GEN PURP 800V 1A AXIAL Semtech Corporation |
3,926 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 2 µs | 1 µA @ 800 V | 800 V | 1A (DC) | - | 1.2 V @ 1 A | |
|
|
VS-35APF06L-M3RECTIFIER DIODE 35A 600V TO-247A Vishay General Semiconductor - Diodes Division |
3,932 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 160 ns | 100 µA @ 600 V | 600 V | 35A | -40°C ~ 150°C | 1.46 V @ 35 A | |
|
1N5294UR-1/TRCURRENT REGULATOR Microchip Technology |
3,882 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | - | 100 V | 825mA | -65°C ~ 175°C | 1.2 V @ 540 mA | |
|
VS-APU6006-N3DIODE GEN PURP 600V 30A TO247AC Vishay General Semiconductor - Diodes Division |
3,612 | - |
RFQ |
Scheda tecnica |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 45 ns | 30 µA @ 600 V | 600 V | 30A | -40°C ~ 150°C | 2 V @ 30 A |
|
|
JANTXV1N5811USDIODE GEN PURP 150V 3A B-MELF Microchip Technology |
2,416 | - |
RFQ |
Scheda tecnica |
Bulk | Military, MIL-PRF-19500/477 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 60pF @ 10V, 1MHz | 30 ns | 5 µA @ 150 V | 150 V | 3A | -65°C ~ 175°C | 875 mV @ 4 A |
|
VS-40HFL20S02DIODE GEN PURP 200V 40A DO203AB Vishay General Semiconductor - Diodes Division |
3,242 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | 200 ns | 100 µA @ 200 V | 200 V | 40A | -40°C ~ 125°C | 1.95 V @ 40 A | |
|
|
1N4249DIODE GEN PURP 1KV 1A AXIAL Semtech Corporation |
2,964 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 2 µs | 1 µA @ 1000 V | 1000 V | 1A (DC) | - | 1.2 V @ 1 A | |
|
|
VS-35EPF06L-M3RECTIFIER DIODE 35A 600V TO-247A Vishay General Semiconductor - Diodes Division |
3,092 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 160 ns | 100 µA @ 600 V | 600 V | 35A | -40°C ~ 150°C | 1.46 V @ 35 A | |
|
1N5290UR-1/TRCURRENT REGULATOR Microchip Technology |
2,569 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | - | - | Active | Surface Mount | - | - | - | - | - | - | - | |
|
|
DHG10IM1800UZ-TUBSONIC-1800V-10A- DPAK-HV-TUBE IXYS |
3,569 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 3pF @ 200V, 1MHz | 260 ns | 50 µA @ 1800 V | 1800 V | 10A | -55°C ~ 175°C | 2.27 V @ 10 A | ||
|
|
1N6547DIODE RECT ULT FAST REC A-PKG Microchip Technology |
2,138 | - |
RFQ |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
|
VS-1N1190ADIODE GEN PURP 600V 40A DO203AB Vishay General Semiconductor - Diodes Division |
3,596 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 2.5 mA @ 600 V | 600 V | 40A | -65°C ~ 200°C | 1.3 V @ 126 A | |
|
|
STPSC10H065G2-TR650 V, 10 A HIGH SURGE SILICON C STMicroelectronics |
500 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | ECOPACK®2 | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 480pF @ 0V, 1MHz | 0 ns | 100 µA @ 650 V | 650 V | 10A | -40°C ~ 175°C | 1.75 V @ 10 A |
|
FDH300ADIODE GEN PURP 125V 200MA DO35 onsemi |
2,867 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Through Hole | 6pF @ 0V, 1MHz | - | 1 nA @ 125 V | 125 V | 200mA | 175°C (Max) | 1 V @ 200 mA | |
|
HVM16DIODE GEN PURP 16000V 350MA HVM Rectron USA |
3,201 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 5 µA @ 16000 V | 16000 V | 350mA | -20°C ~ 150°C | 14 V @ 350 mA | |
|
USB260-M3/52TDIODE GEN PURP 600V 2A DO214AA Vishay General Semiconductor - Diodes Division |
2,078 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 45pF @ 4V, 1MHz | 30 ns | 5 µA @ 600 V | 600 V | 2A | -55°C ~ 150°C | 1.6 V @ 2 A | |
|
DSEP15-06BDIODE GEN PURP 600V 15A TO220AC IXYS |
2,787 | - |
RFQ |
Scheda tecnica |
Tube | HiPerFRED™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 30 ns | 100 µA @ 600 V | 600 V | 15A | -55°C ~ 175°C | 2.52 V @ 15 A |
|
MBRM120ET1GDIODE SCHOTTKY 20V 1A POWERMITE onsemi |
236,816 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT),Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 10 µA @ 20 V | 20 V | 1A | -65°C ~ 150°C | 530 mV @ 1 A |
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