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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VS-E5TX3006THN330A, 600V, "X" SERIES FRED PT IN Vishay General Semiconductor - Diodes Division |
2,727 | - |
RFQ |
Scheda tecnica |
Tube | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 41 ns | 20 µA @ 600 V | 600 V | 30A | -55°C ~ 175°C | 2.1 V @ 30 A |
|
VSSC520S-M3/57TDIODE SCHOTTKY 5A 200V DO-214AB Vishay General Semiconductor - Diodes Division |
2,032 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 280pF @ 4V, 1MHz | - | 200 µA @ 200 V | 200 V | 5A (DC) | -40°C ~ 150°C | 1.7 V @ 5 A |
|
MUR3050PTRECTIFIER DIODE Rochester Electronics, LLC |
3,981 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | - | 200 V | 30A | - | - | |
|
|
SSC54HE3_A/IDIODE SCHOTTKY 40V 5A DO214AB Vishay General Semiconductor - Diodes Division |
3,809 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 40 V | 40 V | 5A | -65°C ~ 150°C | 490 mV @ 5 A |
|
DSS16-01AS-TUBDIODE SCHOTTKY 100V 16A TO263AB IXYS |
3,099 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 100 V | 100 V | 16A | -55°C ~ 175°C | 790 mV @ 15 A | |
|
|
1N3643DIODE GEN PURP 1KV 250MA AXIAL Microchip Technology |
3,984 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 100 µA @ 1000 V | 1000 V | 250mA | -65°C ~ 175°C | 5 V @ 250 mA | |
|
|
SS32-E3/57TDIODE SCHOTTKY 20V 3A DO214AB Vishay General Semiconductor - Diodes Division |
2,070 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 20 V | 20 V | 3A | -55°C ~ 125°C | 500 mV @ 3 A | |
|
|
VS-APU6006LHN3FREDS - TO-247 Vishay General Semiconductor - Diodes Division |
3,505 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 110 ns | 30 µA @ 600 V | 600 V | 60A | -55°C ~ 175°C | 1.5 V @ 60 A | |
|
1N5295UR-1/TRCURRENT REGULATOR Microchip Technology |
3,575 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | - | 100 V | 902mA | -65°C ~ 175°C | 1.25 V @ 590.4 mA | |
|
CDLL1A20DIODE SCHOTTKY 20V 1A DO213AB Microchip Technology |
3,358 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 0.9pF @ 5V, 1MHz | - | 100 µA @ 20 V | 20 V | 1A | - | 600 mV @ 1 A | |
|
|
JANTX1N3595AUR-1DIODE GP 125V 150MA DO213AA Microchip Technology |
2,068 | - |
RFQ |
Scheda tecnica |
Bulk | Military, MIL-PRF-19500/241 | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard, Reverse Polarity | Active | Surface Mount | - | 3 µs | 2 nA @ 125 V | 125 V | 150mA | -65°C ~ 175°C | 920 mV @ 100 mA |
|
1N6628DIODE GEN PURP 600V 1.75A AXIAL Microchip Technology |
2,263 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 45 ns | 2 µA @ 600 V | 600 V | 1.75A | -65°C ~ 150°C | 1.35 V @ 2 A | |
|
|
1N3645DIODE GEN PURP 1.4KV 250MA AXIAL Microchip Technology |
3,111 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 100 µA @ 1400 V | 1400 V | 250mA | -65°C ~ 175°C | 5 V @ 250 mA | |
|
ISL9R1560G2DIODE GEN PURP 600V 15A TO247-2 onsemi |
2,231 | - |
RFQ |
Scheda tecnica |
Tube | Stealth™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 40 ns | 100 µA @ 600 V | 600 V | 15A | -55°C ~ 175°C | 2.2 V @ 15 A |
|
|
1N5290UR-1E3CURRENT REGULATOR Microchip Technology |
2,765 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | - | - | Active | Surface Mount | - | - | - | - | - | - | - | |
|
IDW30E60AFKSA1DIODE GEN PURP 600V 60A TO247-3 Infineon Technologies |
2,493 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Not For New Designs | Through Hole | - | 143 ns | 40 µA @ 600 V | 600 V | 60A (DC) | -40°C ~ 175°C | 2 V @ 30 A | |
|
|
JANTX1N5187DIODE GEN PURP 200V 3A AXIAL Microchip Technology |
2,169 | - |
RFQ |
Scheda tecnica |
Bulk | Military, MIL-PRF-19500/424 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 200 ns | 2 µA @ 200 V | 200 V | 3A | -65°C ~ 175°C | 1.5 V @ 9 A |
|
JANTXV1N5618USDIODE GEN PURP 600V 1A D5A Microchip Technology |
3,369 | - |
RFQ |
Scheda tecnica |
Bulk | Military, MIL-PRF-19500/427 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 2 µs | 500 nA @ 600 V | 600 V | 1A | -65°C ~ 200°C | 1.3 V @ 3 A |
|
|
1N3644STANDARD RECTIFIER Microchip Technology |
2,335 | - |
RFQ |
Bulk | Military, MIL-PRF-19500/279 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | - | - | - | -65°C ~ 175°C | 5 V @ 250 mA | |
|
CDLL914DIODE GEN PURP 75V 200MA DO213AA Microchip Technology |
3,570 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 4pF @ 0V, 1MHz | 20 ns | 500 nA @ 75 V | 75 V | 200mA | -65°C ~ 175°C | 1.2 V @ 50 mA |
- 1500+ Media giornaliera RFQ
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