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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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BYG10D-E3/TR3DIODE AVALANCHE 200V 1.5A Vishay General Semiconductor - Diodes Division |
2,385 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 4 µs | 1 µA @ 200 V | 200 V | 1.5A | -55°C ~ 150°C | 1.15 V @ 1.5 A | |
|
IDW15E65D2FKSA1DIODE GEN PURP 650V 30A TO247-3 Rochester Electronics, LLC |
15,600 | - |
RFQ |
Scheda tecnica |
Bulk,Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 47 ns | 40 µA @ 650 V | 650 V | 30A | -40°C ~ 175°C | 2.3 V @ 15 A | |
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|
SF18G-TPDIODE GPP SUPER FAST 1A DO-41 Micro Commercial Co |
2,801 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 35 ns | - | 600 V | 1A | -55°C ~ 150°C | - | |
|
|
BYG10M-E3/TR3DIODE AVALANCHE 1KV 1.5A Vishay General Semiconductor - Diodes Division |
2,849 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 4 µs | 1 µA @ 1000 V | 1000 V | 1.5A | -55°C ~ 150°C | 1.15 V @ 1.5 A | |
|
1N5309UR-1/TRCURRENT REGULATOR Microchip Technology |
3,479 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | - | 100 V | 3.3A | -65°C ~ 175°C | 2.25 V @ 2.16 A | |
|
RB520VM-30FHTE-17RB520VM-30FH IS LOW V F Rohm Semiconductor |
3,840 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Not For New Designs | Surface Mount | - | - | 1 µA @ 10 V | 30 V | 200mA | 150°C (Max) | 580 mV @ 200 mA |
|
|
ES1C-E3/61TDIODE GEN PURP 150V 1A DO214AC Vishay General Semiconductor - Diodes Division |
3,582 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 25 ns | 5 µA @ 150 V | 150 V | 1A | -55°C ~ 150°C | 920 mV @ 1 A | |
|
1N4002E-E3/54DIODE GEN PURP 100V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,655 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
|
|
SL13-E3/5ATDIODE SCHOTTKY 30V 1.5A DO214AC Vishay General Semiconductor - Diodes Division |
3,819 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 30 V | 30 V | 1.5A | -55°C ~ 125°C | 445 mV @ 1 A | |
|
|
1N4003E-E3/54DIODE GEN PURP 200V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,753 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
|
SS16LW RVGDIODE SCHOTTKY 60V 1A SOD123W Taiwan Semiconductor Corporation |
2,803 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 60 V | 60 V | 1A | -55°C ~ 150°C | 700 mV @ 1 A | |
|
|
1N4004E-E3/54DIODE GEN PURP 400V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,756 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
|
1SS307(TE85L,F)DIODE GEN PURP 30V 100MA SMINI Toshiba Semiconductor and Storage |
3,369 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 6pF @ 0V, 1MHz | - | 10 µA @ 30 V | 30 V | 100mA | 125°C (Max) | 1.3 V @ 100 mA | |
|
|
1N4001E-E3/54DIODE GEN PURP 50V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,580 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 50 V | 50 V | 1A | -50°C ~ 150°C | 1.1 V @ 1 A | |
|
SS1FH6HM3/HDIODE SCHOTTKY 60V 1A DO219AB Vishay General Semiconductor - Diodes Division |
2,790 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 90pF @ 4V, 1MHz | - | 3 µA @ 60 V | 60 V | 1A | -55°C ~ 175°C | 700 mV @ 1 A |
|
|
1N4005E-E3/54DIODE GEN PURP 600V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,209 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
|
RB420DT146DIODE SCHOTTKY 40V 100MA SMD3 Rohm Semiconductor |
2,192 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 6pF @ 10V, 1MHz | - | 1 µA @ 10 V | 40 V | 100mA | 125°C (Max) | 450 mV @ 10 mA | |
|
1N5817 BK PBFREEDIODE SCHOTTKY 20V 1A DO41 Central Semiconductor Corp |
2,678 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 1 mA @ 20 V | 20 V | 1A | -65°C ~ 150°C | 450 mV @ 1 A | |
|
RB168MM-30TFTRRB168MM-30TF IS THE HIGH RELIABI Rohm Semiconductor |
2,779 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 600 nA @ 30 V | 30 V | 1A | 150°C (Max) | 690 mV @ 1 A |
|
|
1N5817 TR PBFREEDIODE SCHOTTKY 20V 1A DO41 Central Semiconductor Corp |
2,763 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 1 mA @ 20 V | 20 V | 1A | -65°C ~ 150°C | 450 mV @ 1 A |
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