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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BYG20D-E3/TR3DIODE AVALANCHE 200V 1.5A Vishay General Semiconductor - Diodes Division |
3,780 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 75 ns | 1 µA @ 200 V | 200 V | 1.5A | -55°C ~ 150°C | 1.4 V @ 1.5 A | |
|
S1D M2GDIODE GEN PURP 200V 1A DO214AC Taiwan Semiconductor Corporation |
2,611 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 12pF @ 4V, 1MHz | 1.5 µs | 1 µA @ 200 V | 200 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
1N4532/TRSIGNAL/COMPUTER DIODE Microchip Technology |
2,303 | - |
RFQ |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Through Hole | - | 30 ns | 100 nA @ 50 V | 50 V | 125mA | -55°C ~ 175°C | 1 V @ 10 mA | ||
|
S70JRDIODE GEN PURP REV 600V 70A DO5 GeneSiC Semiconductor |
3,077 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 10 µA @ 100 V | 600 V | 70A | -65°C ~ 180°C | 1.1 V @ 70 A | |
|
|
FR16G05DIODE GEN PURP 400V 16A DO4 GeneSiC Semiconductor |
2,477 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | 500 ns | 25 µA @ 100 V | 400 V | 16A | -65°C ~ 150°C | 1.1 V @ 16 A | |
|
|
1N6662USRECTIFIER DIODE Microchip Technology |
3,152 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
VS-20ETF12STRL-M3DIODE GEN PURP 1.2KV 20A TO263AB Vishay General Semiconductor - Diodes Division |
2,332 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 400 ns | 100 µA @ 1200 V | 1200 V | 20A | -40°C ~ 150°C | 1.31 V @ 20 A | |
|
1N5305UR-1/TRCURRENT REGULATOR Microchip Technology |
2,203 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | - | 100 V | 2.2A | -65°C ~ 175°C | 1.85 V @ 1.44 A | |
|
1N4154-1SIGNAL/COMPUTER DIODE Microchip Technology |
2,019 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Through Hole | - | 2 ns | 100 nA @ 25 V | 35 V | 200mA | -65°C ~ 150°C | 1 V @ 30 mA | |
|
|
BYG20J-E3/TR3DIODE AVALANCHE 600V 1.5A Vishay General Semiconductor - Diodes Division |
3,715 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 75 ns | 1 µA @ 600 V | 600 V | 1.5A | -55°C ~ 150°C | 1.4 V @ 1.5 A | |
|
BA157G R0GDIODE GEN PURP 400V 1A DO204AL Taiwan Semiconductor Corporation |
2,740 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.2 V @ 1 A | |
|
|
S70KDIODE GEN PURP 800V 70A DO5 GeneSiC Semiconductor |
3,488 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 10 µA @ 100 V | 800 V | 70A | -65°C ~ 180°C | 1.1 V @ 70 A | |
|
|
FR16J02DIODE GEN PURP 600V 16A DO4 GeneSiC Semiconductor |
3,380 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | 250 ns | 25 µA @ 100 V | 600 V | 16A | -65°C ~ 150°C | 900 mV @ 16 A | |
|
JANTXV1N3595AUR-1/TRSIGNAL/COMPUTER DIODE Microchip Technology |
2,437 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/241 | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | - | 3 µs | 2 nA @ 125 V | 125 V | 150mA | -65°C ~ 175°C | 920 mV @ 100 mA | |
|
SF3006PT C0GDIODE GEN PURP 400V 30A TO247AD Taiwan Semiconductor Corporation |
2,046 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 175pF @ 4V, 1MHz | 35 ns | 10 µA @ 400 V | 400 V | 30A | -55°C ~ 150°C | 1.3 V @ 15 A | |
|
|
1N5312UR-1E3CURRENT REGULATOR Microchip Technology |
2,919 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | - | 100 V | 4.29A | -65°C ~ 175°C | 2.6 V @ 2.808 A | |
|
SICRB5650TRDIODE SCHOTTKY SILICON CARBIDE S SMC Diode Solutions |
2,458 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | - | 0 ns | 60 µA @ 650 V | 650 V | 5A | -55°C ~ 175°C | 1.7 V @ 5 A | |
|
|
S70KRDIODE GEN PURP REV 800V 70A DO5 GeneSiC Semiconductor |
3,530 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 10 µA @ 100 V | 800 V | 70A | -65°C ~ 180°C | 1.1 V @ 70 A | |
|
|
FR16J05DIODE GEN PURP 600V 16A DO4 GeneSiC Semiconductor |
2,277 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | 500 ns | 25 µA @ 100 V | 600 V | 16A | -65°C ~ 150°C | 1.1 V @ 16 A | |
|
JANTXV1N5415US/TRRECTIFIER UFR,FRR Microchip Technology |
2,796 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/411 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 150 ns | 1 µA @ 50 V | 50 V | 3A | -65°C ~ 175°C | 1.5 V @ 9 A |
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