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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
A1N4148WT-HFAUTOMOTIVE DIODE SWITCHING 100V Comchip Technology |
3,234 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 2pF @ 0V, 1MHz | 4 ns | 1 µA @ 75 V | 75 V | 125mA | -65°C ~ 150°C | 1.25 V @ 150 mA | |
|
RB451UMTLRB451UM IS SCHOTTKY BARRIER DIOD Rohm Semiconductor |
3,097 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 6pF @ 10V, 1MHz | - | 90 µA @ 40 V | 40 V | 100mA | 125°C (Max) | 450 mV @ 100 mA | |
|
BA157GHR0GDIODE GEN PURP 400V 1A DO204AL Taiwan Semiconductor Corporation |
3,423 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.2 V @ 1 A |
|
ES1JL RVGDIODE GEN PURP 600V 1A SUB SMA Taiwan Semiconductor Corporation |
3,414 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | 35 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
|
BA158GHR0GDIODE GEN PURP 600V 1A DO204AL Taiwan Semiconductor Corporation |
2,801 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.2 V @ 1 A |
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|
SE20PJ-M3/84ADIODE GEN PURP 600V 1.6A DO220AA Vishay General Semiconductor - Diodes Division |
2,787 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 13pF @ 4V, 1MHz | 1.2 µs | 5 µA @ 600 V | 600 V | 1.6A | -55°C ~ 175°C | 1.05 V @ 2 A | |
|
S1G M2GDIODE GEN PURP 400V 1A DO214AC Taiwan Semiconductor Corporation |
3,762 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 12pF @ 4V, 1MHz | 1.5 µs | 1 µA @ 400 V | 400 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
SS1FL3-M3/HDIODE SCHOTTKY 30V 1A DO-219AB Vishay General Semiconductor - Diodes Division |
2,408 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 130pF @ 4V, 1MHz | - | 200 µA @ 30 V | 30 V | 1A | -55°C ~ 150°C | 480 mV @ 1 A |
|
|
S1J M2GDIODE GEN PURP 600V 1A DO214AC Taiwan Semiconductor Corporation |
2,754 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 12pF @ 4V, 1MHz | 1.5 µs | 1 µA @ 600 V | 600 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A | |
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|
SE30PAJ-M3/IDIODE GEN PURP 600V 1.4A DO221BC Vishay General Semiconductor - Diodes Division |
2,546 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 19pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 600 V | 600 V | 1.4A (DC) | -55°C ~ 175°C | 910 mV @ 1.5 A |
|
|
S1K M2GDIODE GEN PURP 800V 1A DO214AC Taiwan Semiconductor Corporation |
2,467 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 12pF @ 4V, 1MHz | 1.5 µs | 1 µA @ 800 V | 800 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
BYM10-1000-E3/97DIODE GEN PURP 1KV 1A DO213AB Vishay General Semiconductor - Diodes Division |
2,696 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | - | 10 µA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | 1.2 V @ 1 A |
|
1N4448HWS-13-FDIODE GEN PURP 80V 250MA SOD323 Diodes Incorporated |
2,082 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 3.5pF @ 0V, 1MHz | 4 ns | 100 nA @ 80 V | 80 V | 250mA | -65°C ~ 150°C | 1.25 V @ 150 mA | |
|
RS1JLWHRVGDIODE GEN PURP 600V 1A SOD123W Taiwan Semiconductor Corporation |
2,437 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 150 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 175°C | 1.3 V @ 1 A | |
|
BAS40-00-HE3-18DIODE SCHOTTKY 40V 200MA SOT23 Vishay General Semiconductor - Diodes Division |
2,321 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 5pF @ 0V, 1MHz | 5 ns | 100 nA @ 30 V | 40 V | 200mA | 125°C (Max) | 1 V @ 40 mA |
|
|
RS1MLWHRVGDIODE GEN PURP 1KV 1A SOD123W Taiwan Semiconductor Corporation |
3,357 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 250 ns | 5 µA @ 1000 V | 1000 V | 1A | -55°C ~ 175°C | 1.3 V @ 1 A | |
|
BAT42WS-HE3-18DIODE SCHOTTKY 30V 200MA SOD323 Vishay General Semiconductor - Diodes Division |
3,823 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 7pF @ 1V, 1MHz | 5 ns | 500 nA @ 25 V | 30 V | 200mA (DC) | 125°C (Max) | 650 mV @ 50 mA |
|
JANTXV1N5617/TRRECTIFIER UFR,FRR Microchip Technology |
3,998 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/427 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 35pF @ 12V, 1MHz | 150 ns | 500 nA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.6 V @ 3 A | |
|
VS-85HFLR10S02DIODE GEN PURP 100V 85A DO203AB Vishay General Semiconductor - Diodes Division |
2,629 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | 200 ns | 100 µA @ 100 V | 100 V | 85A | -40°C ~ 125°C | 1.75 V @ 266.9 A | |
|
JANTX1N5554US/TRSTD RECTIFIER Microchip Technology |
3,152 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 2 µs | - | - | 3A | -65°C ~ 175°C | 1.3 V @ 9 A |
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